Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al<sub>2</sub>O<sub>3</sub>/AlInN/GaN MIS-HEMT

Dutta, Gourab; Sreenidhi, T.; Karumuri, Naveen; DasGupta, Nandita; DasGupta, Amitava

doi:10.1109/led.2014.2357837

Cited by 52 publications

(26 citation statements)

References 14 publications

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“…3 In addition, the lattice matched AlInN/GaN devices using longer L g could not achieve a high output current >1 A/mm as expected. [4][5][6][7] In contrast, the AlInN/GaN heterostructures with lower In composition <17% are potential candidates to deliver high current because of its high N s due to in-built piezoelectric and spontaneous polarization effects. 8 Such AlInN/GaN heterostructure with high conductivity and/or N s is required for attaining low on-resistance (R on ) which is essential for high power switching applications.…”

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confidence: 99%

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Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Freedsman

Watanabe

Urayama

et al. 2015

Applied Physics Letters

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The authors report on Al2O3/Al0.85In0.15N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al2O3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al2O3/Al0.85In0.15N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

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confidence: 99%

“…In particular, a majority of the available reports for AlInN/GaN devices are on sapphire or SiC substrates. [5][6][7]12,15,16 Addressing the issues aforementioned, we have fabricated Al 0.85 In 0. 15 performances compared to SB-HEMT.…”

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confidence: 99%

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Freedsman

Watanabe

Urayama

et al. 2015

Applied Physics Letters

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“…After confirming that sample A's gate leakage current was markedly reduced, the dielectric layer composition was changed, as shown in Figure 1c. We then compared the transfer I-V characteristics for these structures when V DS = 1, 5, 10, and 30 V. Figure 8 shows the threshold voltages, maximum transconductances, and drain currents for samples A, B, and C. Sample B's threshold voltage shifted toward the positive direction as compared with sample A, and sample C shifted toward the negative direction [35]. Sample B and C's threshold voltages were about −6.2 and −9.4 V, respectively.…”

Section: Resultsmentioning

confidence: 99%

Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

et al. 2019

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This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical properties, including threshold voltage, transconductance, and gate leakage current with the self-heating effect, by applying a single Si3N4 dielectric layer. We then employed different Al2O3 dielectric layer thicknesses on top of the Si3N4, and also investigated lattice temperature across a two-dimensional electron gas channel layer with various dielectric layer compositions to verify the thermal effect on gate leakage current. Gate leakage current was significantly reduced as the dielectric layer was added, and further decreased for a 15-nm thick Al2O3 on a 5-nm Si3N4 structure. Although the gate leakage current increased as Al2O3 thickness increased to 35 nm, the breakdown voltage was improved.

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“…GaN-based high electron mobility transistors (HEMTs) are widely popular for high-power and high-frequency devices in many defense and commercial applications owing to their wide bandgap, high electron saturation velocity, high breakdown field, large polarization, and high two-dimensional electron gas (2DEG) density [1][2][3] . Lattice matched InAlN/GaN heterostructures have the advantages of higher 2DEG density due to higher spontaneous polarization fields, less strain and less crystal defects compared to the AlGaN/GaN counterpart and are thus promising candidates for power and RF device applications [4][5][6][7][8] . GaN-based HEMTs are inherently normally-on devices; in many power electronics applications, such as in switching applications, normally-off operation is preferred for security, reliability, and compatibility reasons.…”

Section: Introductionmentioning

confidence: 99%

Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates

Gulseren

Bozok

Kurt

et al. 2019

Gallium Nitride Materials and Devices XIV

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A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer and one containing an AlGaN back-barrier, and the threshold voltage, drain current density, and buffer leakage current are compared. With the epitaxial structure containing a high resistive GaN layer, normally-off operation with a threshold voltage of +0.5 V is achieved. The threshold voltage is further increased to +2 V with the AlGaN back-barrier, and the buffer leakage current was improved by over an order of magnitude.

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Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al₂O₃/AlInN/GaN MIS-HEMT

Cited by 52 publications

References 14 publications

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates

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Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT

Cited by 52 publications

References 14 publications

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates

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Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al₂O₃/AlInN/GaN MIS-HEMT