Positive and negative magnetoresistance on both sides of the metal insulator transition in metallic n-type InP

Abstract

We present magnetoresistance measurements on a metallic n-type InP sample on both sides of the metal-insulator transition (MIT). On the metallic side of the MIT, we have observed negative magnetoresistance behaviour, and the experimental data are interpreted in terms of the weak localization and the effect of electron-electron interactions. On the insulator side of the MIT, we have observed positive magnetoresistance associated with variable range hopping conduction. In both cases, experimental data are compared with available theoretical models.

Scale Theory and Metal-Insulator Transition in Metallic N-Type Inp Semiconductor at Very Low Temperatures With Magnetic Field

“…This phenomenon already observed in several metallic samples [5,6], was interpreted by the theory of Shubnikov-de Haas. This oscillation is characteristic of metallic systems and can be treated in the approximation of quasi-free electrons.…”

Hopping conduction in amorphous silicon-chromium films at very low temperature

“…Whereas, the value n=2 means that the DOS varies in the vicinity of the Fermi level and p=0.5, corresponding to ES VRH with creation of CG (Equation (2)). Both VRH regimes have been widely shown in several materials [5][6][7][8][9][10].…”

“…It has been invoked to explain the conduction in several compounds, such as, semiconductors [5][6][7][8], semiconductormetal alloys [9] and granular films [10,11].…”

NEGATIVE MAGNETORESISTANCE BEHAVIOURS AND LOCALIZED MAGNETIC MOMENTS IN INSULATING CdSe SEMICONDUCTOR AT VERY LOW TEMPERATURES WITH MAGNETIC FIELD

“…In previous papers we have analyzed the positive MR given by Eq. (13) in different samples of CdSe [27,28] and InP [29][30].…”