Position and Frequency Control of Strain-Induced Quantum Emitters in WSe<sub>2</sub> Monolayers

Kim, Hyoju; Moon, Jong Sung; Noh, Gichang; Lee, Jieun; Kim, Je‐Hyung

doi:10.1021/acs.nanolett.9b03421

Cited by 44 publications

(42 citation statements)

References 34 publications

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“…[ 3c,26 ] We envision that two or more emitters in hBN can be put in resonance by employing the strain methods using cantilever geometries, as an example. [ 3b,27 ] The technique is fully amenable to the engineering of emitter—cavity coupling, whereby the SPE ZPL can be strain tuned into resonance with the cavity mode. [ 4,28 ] Finally, and most intriguingly, the strain could be employed to enhance the optically detected magnetic resonance contrast.…”

Section: Figurementioning

confidence: 99%

Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

et al. 2020

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favorable quantum efficiencies. [8] However, the emitters have been shown to be susceptible to environmental influences, which lead to extreme inhomogeneity in their emission properties, [9] including a broad, continuous spectral range of zero phonon lines spanning from the deep ultraviolet to the near infrared. [10] Consequently, reliable tuning methods for controlling the emission properties are paramount for their implementation in quantum photonic applications.Initial reports on tuning of hBN emitters employed voltage-controlled Stark shift devices and hydrostatic pressure. [11] Strainbased tuning of hBN defects has also been investigated using either the application of surface acoustic waves [12] or mechanical deflection of solid beams that translated vertical displacements to primarily horizontal strain tensors. [13] However, contribution from both vertical and horizontal strain components in previous studies has precluded direct analysis of the in-plane response to strain, which is especially critical for 2D materials. In this work, we employ high degrees of tensile strain to tune the emission of hBN SPEs and achieve record tuning magnitudes for a layered material of up to 20 nm (65 meV). Unlike all previous reports, we take advantage of large-area (approximately few square millimeters) ultrathin hBN films (≈10 nm) that host a variety of SPEs. [14] These samples are amenable to the direct application of tensile strain (as is detailed below), and we report both red and blue spectral shifts, relating our results to modifications of the defect energy level manifold and corresponding coupling to the bulk phonon bath. We demonstrate a rotation of the optical dipole in select SPEs, suggesting the presence of a second excited state. A theoretical model to describe strain tuning the emission frequency of SPEs in hBN is fully derived and further expanded to suggest that dipole rotation occurs via the influence of this additional energy level. The ability to tune emission frequency and additional photophysical characteristics of emitters offers a promising route to tailor lightmatter interactions in these systems. [15] Strain experiments were performed on hBN films grown by chemical vapor deposition (CVD) on a copper foil to a thickness of ≈7 nm. [14a] Additional characterization and properties of the hBN films can be found elsewhere. [14a] The films were transferred from the copper foil using a polymer-assisted (poly(methyl methacrylate) (PMMA) wet-transfer process to a poly(dimethylsiloxane) (PDMS) slab of 2.7 cm in length and ≈200 µm thick (cf. Experimental Section). The hBN/PDMS slab was secured in a mechanical straining device and mounted for optical characterization via confocal microscopy, as shown in Figure 1a. The PDMS slab was subject to varying degrees of Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, tensile strain is app...

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Section: Figurementioning

confidence: 99%

Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

et al. 2020

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“…It has been shown that already excitons in plain mono-and bilayer TMDCs react to external strain tuning [169,170] and that even the exciton-phonon coupling can be controlled in this way. [171] First works are proceeding in this direction by demonstrating that also the transition energy of the artificial atoms can be tuned by applying static strain fields, either by bending a micromechanic device [172] or by using a piezoelectric substrate to stretch the entire system. [173] A coupling of TMDC artificial atoms and mechanic resonators entirely made from the monolayer have to the best of our knowledge not yet been achieved.…”

Section: Artificial Atoms In Layered Materialsmentioning

confidence: 99%

Remote Phonon Control of Quantum Dots and Other Artificial Atoms

2021

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To exploit the full potential of chips for quantum technologies, it is worth considering all possible opportunities offered by the solid state. The aspect covered in this article is the use of phononic fields to remotely influence the optical properties of artificial atoms. The three most commonly used strain sources are discussed, that is, mechanical resonators, surface acoustic waves, and picosecond acoustic pulses. All three platforms are routinely interfaced with quantum dots and other qubits in basic research, which renders a first step toward large scale implementation in quantum applications. A central question regarding the interaction between lattice oscillations and the optically active artificial atoms deals with the characteristic time scales of the two components. The influence of this aspect on the expected optical response on the phononic driving is discussed. Besides well known semiconducting quantum dots and color centers that typically operate in the visible spectral range, the more recently discovered artificial atoms in layered van der Waals materials are discussed. Due to their flexibility and robustness, these crystals promise vast opportunities for future applications. Another important building block lies in superconducting qubits that allow to resonantly generate quantum phonon states and therefore establish the field of quantum acoustics.

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“…[9,44] We envision that two or more emitters in hBN can be put in resonance by employing the strain methods using cantilever geometries, as an example. [8,45] The technique is fully amenable to the engineering of emitter -cavity coupling, whereby the SPE ZPL can be strain tuned into resonance with the cavity mode. [10,46] Finally, and most intriguingly, the strain could be employed to enhance the optically detected magnetic resonance contrast.…”

Section: Figure 2 Large Red and Blue Strain-induced Shifts In A-b mentioning

confidence: 99%

Tuning of Quantum Emitters in Hexagonal Boron Nitride

Mendelson

Nikolay

et al. 2019

Conference on Lasers and Electro-Optics

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Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, we apply tensile strain to quantum emitters embedded in few-layer hBN films and realize both red and blue spectral shifts with tuning magnitudes up to 65 meV, a record for any two-dimensional quantum source. We demonstrate reversible tuning of the emission and related photophysical properties. We also observe rotation of the optical dipole in response to strain, suggesting the presence of a second excited state. We derive a theoretical model to describe strain-based tuning in hBN, and the rotation of the optical dipole. Our work demonstrates the immense potential for strain tuning of quantum emitters in layered materials to enable their employment in scalable quantum photonic networks.Single photon emitters (SPEs) embedded in solid state hosts are critical building blocks for a range of quantum technologies. [1][2][3] Integrating SPEs with on-chip nanophotonic components provides a scalable route towards the engineering of quantum gates and quantum circuitry. [4][5][6] However, unwanted interactions between the atom-like defects and the crystal host environment lead to spectral inhomogeneity that hinders device performance. To address this issue, methods for tuning emitter properties are critical for generating identical photons, [7][8][9] and for coupling to high-quality factor photonic resonators, where tuning magnitudes must be comparable to or greater than the cavity linewidths. [10] Recently, hexagonal boron nitride (hBN), has been shown to host a range of sub-band gap defects operating as room temperature SPEs. [11][12][13][14] These SPEs display a number of desirable properties, including high photon purity, [15] bright emission, [16] and favorable quantum efficiencies. [17] However, the emitters have been shown to be susceptible to environmental influences, which lead to extreme inhomogeneity in their emission properties, [18] including a broad, continuous spectral range of zero phonon lines spanning from the deep ultraviolet to the near infrared. [19][20][21] Consequently, reliable tuning methods for controlling the emission properties are paramount for their implementation in quantum photonic applications.

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Position and Frequency Control of Strain-Induced Quantum Emitters in WSe₂ Monolayers

Cited by 44 publications

References 34 publications

Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

Remote Phonon Control of Quantum Dots and Other Artificial Atoms

Tuning of Quantum Emitters in Hexagonal Boron Nitride

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Position and Frequency Control of Strain-Induced Quantum Emitters in WSe2 Monolayers

Cited by 44 publications

References 34 publications

Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

Remote Phonon Control of Quantum Dots and Other Artificial Atoms

Tuning of Quantum Emitters in Hexagonal Boron Nitride

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Position and Frequency Control of Strain-Induced Quantum Emitters in WSe₂ Monolayers