Porous silicon based β-FeSi2 and photoluminescence

Chen, H. T.; Wu, Xiaohong; Zhang, Y. Y.; Su, Weining

doi:10.1007/s00339-009-5310-3

Cited by 8 publications

(8 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2 Recently, its photoluminescence and electroluminescence properties at 1.55 m have been observed in the strained -FeSi 2 /Si system. [3][4][5][6] The room-temperature current-voltage and photoresponse characteristics have also been demonstrated. 7 So far, some techniques have been used to grow epitaxial -FeSi 2 films on silicon wafer.…”

Section: Introductionmentioning

confidence: 93%

Synthesis of Crystalline β-FeSi₂ Under High-Temperature and High-Pressure

Wu²,

Wang³

et al. 2011

j nanosci nanotechnol

Self Cite

View full text Add to dashboard Cite

In this paper, we report the synthesis of crystalline beta-FeSi2 via the reaction of Si and Fe powders under high-temperature and high-pressure. X-ray diffraction and Raman scattering results confirm formation of the beta-FeSi2 phase. Scanning electron microscopy, high-resolution transmission electron microscopy, and selected-area electron diffraction patterns show that the beta-FeSi2 phase coexists with Si phase with small nanocrystal sizes. The formation of the beta-FeSi2 phase is a result of Si diffusion into Fe region. The obtained results suggest that the removal of Si phase can be reached through increasing Fe content and prolonging the duration of high-pressure thermal treatment.

show abstract

Section: Introductionmentioning

confidence: 93%

Synthesis of Crystalline β-FeSi₂ Under High-Temperature and High-Pressure

Wu²,

Wang³

et al. 2011

j nanosci nanotechnol

Self Cite

View full text Add to dashboard Cite

show abstract

“…The FeSi 2 phase's photoluminescence properties have been studied and it has been reported that the material, with a band gap of 0.8 eV, emits at a wavelength of 1.54 μm (0.81 eV) [25][26][27][28][29][30][31]. To the best of our knowledge photoluminescence properties of the FeSi have never been reported.…”

Section: Photoluminescence Of the Fesi/si Core-shell Nanofibresmentioning

confidence: 99%

Visible and IR photoluminescence of c-FeSi@a–Si core–shell nano-fibres produced by vapour transport

Thabethe

Linganiso

Motaung

et al. 2013

Journal of Luminescence

View full text Add to dashboard Cite

The procedures for the synthesis of amorphous ε-FeSi/Si core-shell nanofibres by vapour transport in a CVD configuration are reported. Crystallite studies by the Williamson-Hall method show the sizes to be typically about 8.0 nm which agrees with TEM value of 7.9 nm fibre diameter with a compressive strain of about 0.04. Features in the photoluminescence of these FeSi core-shells in both visible and IR are at 410 nm, 1062 nm, 1414 nm and 1772 nm and absorption feature at 1000 cm −1 from FTIR are explained from density functional theory (DFT) ab initio calculations. PL confirms the intra-band transition whereas FTIR agrees perfectly with the band-to-band transition whose band gap energy is 0.13 eV for FeSi. FTIR also unveils inter-band transition which DFT calculation could not predict. Raman spectroscopy data confirm FeSi and nano-Si presence.

show abstract

“…However, the common diamond-like phase of silicon has a low efficiency of light emission due to indirect band gap. The existing approaches to improve the light-emitting properties of silicon, such as nanostructuring, [1] synthesis of silicon quantum dots in dielectric matrices, [2,3] and creation of composite compounds like SiGe [4] and β-FeSi 2 , [5] have not found their use in technology to date.…”

Section: Introductionmentioning

confidence: 99%

The Effects of Aluminum Gettering and Thermal Treatments on the Light‐Emitting Properties of Dislocation Structures in Self‐Implanted Silicon Subjected to Boron Ion Doping

Tereshchenko

Королев

Khorosheva

et al. 2019

Physica Status Solidi (a)

View full text Add to dashboard Cite

The effect of aluminum gettering (AlG) procedures and thermal treatments on the temperature dependence of the photoluminescence of dislocation structures in silicon formed by Si+ ion implantation and modified by boron ion doping with various doses is investigated. It is shown that the temperature dependence of the D1 line intensity of dislocation‐related luminescence undergoes radical changes as a result of both AlG and thermal treatments at identical regimes. After AlG, the shape of the temperature dependence of the D1 line intensity does not depend on the dose of implanted boron, and a continuous strong increase in the luminescence intensity from 6 to 90–100 K is observed, forming a maximum on the temperature dependence curve. In the case of identical heat treatments of samples (without deposition of the Al film), the correlation is found between the position of the high‐temperature luminescence maximum and the concentration of the implanted boron, namely, its shift to higher temperatures with increasing boron content. A possible mechanism of the observed anomalous behavior of luminescence is discussed.

show abstract

Porous silicon based β-FeSi2 and photoluminescence

Cited by 8 publications

References 25 publications

Synthesis of Crystalline β-FeSi₂ Under High-Temperature and High-Pressure

Synthesis of Crystalline β-FeSi₂ Under High-Temperature and High-Pressure

Visible and IR photoluminescence of c-FeSi@a–Si core–shell nano-fibres produced by vapour transport

The Effects of Aluminum Gettering and Thermal Treatments on the Light‐Emitting Properties of Dislocation Structures in Self‐Implanted Silicon Subjected to Boron Ion Doping

Contact Info

Product

Resources

About

Porous silicon based β-FeSi2 and photoluminescence

Cited by 8 publications

References 25 publications

Synthesis of Crystalline β-FeSi2 Under High-Temperature and High-Pressure

Synthesis of Crystalline β-FeSi2 Under High-Temperature and High-Pressure

Visible and IR photoluminescence of c-FeSi@a–Si core–shell nano-fibres produced by vapour transport

The Effects of Aluminum Gettering and Thermal Treatments on the Light‐Emitting Properties of Dislocation Structures in Self‐Implanted Silicon Subjected to Boron Ion Doping

Contact Info

Product

Resources

About

Synthesis of Crystalline β-FeSi₂ Under High-Temperature and High-Pressure

Synthesis of Crystalline β-FeSi₂ Under High-Temperature and High-Pressure