Porous silicon as a low dimensional and optical material

Bui, Huy; Hoi, Pham Van; Khôi, Phan Hồng; Van, Do Khanh; Binh, Pham Thanh; Cham, Tran Thi

doi:10.1088/1742-6596/187/1/012033

Cited by 4 publications

(3 citation statements)

References 11 publications

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“…Among the candidate materials, porous silicon (PSi) has attracted an increasing research interest, apart from its obvious potentially straightforward integration with standard Si technologies, thanks to its unique properties, and its present applications span from biomedicine (Anglin et al 2008) to biosensing, from photonics (Huy et al 2009) to photovoltaic devices (Xiong et al 2010). After its discovery (Uhlir 1956), porous silicon hasn't attracted much attention until the discovery of its room temperature luminescence properties (Canham 1990).…”

Section: Introductionmentioning

confidence: 99%

Porous Silicon-based Electrochemical Biosensors

Setzu¹,

Monduzzi²,

Mula³

et al. 2011

Biosensors - Emerging Materials and Applications

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Section: Introductionmentioning

confidence: 99%

Porous Silicon-based Electrochemical Biosensors

Setzu¹,

Monduzzi²,

Mula³

et al. 2011

Biosensors - Emerging Materials and Applications

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“…In the case of PS nano-and meso-pores, the size of both the silicon residuals and the air voids (pores) can be in the range of few nanometers to tens ones. Since infrared light has wavelengths of micrometers, PS can be optically described in the infrared range as an "effective medium" [7,8], whose optical properties mainly depend on the relative content of silicon and air (i.e. porosity).…”

Section: Introductionmentioning

confidence: 99%

Investigation of 1d Photonic Crystal Based on Nano-porous Silicon Multilayer for Optical Filtering

Chi¹,

Bui²,

Van³

et al. 2011

Comm. in Phys.

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We present the fabrication, simulation, and measurements of 1D photonic crystal based on nano-porous silicon multilayer designed as an optical interference filter. Using electro-chemical etching with timely repeat steps of applied current densities, we fabricated a multilayer structure composed of alternating high- and low-index layer which achieved 90% power reflectivity at wavelength range of 1400-3000 nm. The simulation is relying on the Transfer Matrix Method (TMM) to design and predict the optical properties of nano-porous silicon multilayer as well as the relation between anodization parameters with reflection spectra. The measured reflection and transmission spectra of the nano-porous silicon multilayer show good agreement with simulation. This technique could provide a convenient and economical method to produce filters, cavities, and graded-index dielectric waveguides in the future.

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“…Si/Ge structures need to offer new solutions for improving the optical efficiency of the materials. The discovery of room temperature photoluminescence in porous silicon (PS) (Canham, 1990), presents a great interest in optoelectronic studies of this material (Huy et al , 2009). In addition, Ge nanostructures have attracted world‐wide attention due to their interesting quantum effects both in electronics and photonics application (Jin et al , 2006).…”

Section: Introductionmentioning

confidence: 99%

Study of Ge embedded inside porous silicon for potential MSM photodetector

Rahim

Hashim

Ali³

2010

Microelectronics International

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PurposeThe purpose of this paper is to describe a very low‐cost way to prepare Ge nano/microstructures by means of filling the material inside porous silicon (PS) using a conventional and cost effective technique in which thermal evaporator with PS acts as patterned substrate. Also, the potential metal‐semiconductor‐metal (MSM) photodetector IV characteristics of the structure are demonstrated.Design/methodology/approachPS was prepared by anodization of Si wafer in ethanoic hydrofluoric acid. The Ge layer was then deposited onto the PS by thermal evaporation. The process was completed by Ni metal deposition using thermal evaporator followed by metal annealing of 400°C for 10 min. Structural analysis of the samples was performed using energy dispersive X‐ray analysis (EDX), scanning electron microscope (SEM), X‐ray diffraction (XRD) and Raman spectroscopy.FindingsA uniform circular network distribution of pores is observed with sizes estimation of 100 nm to 2.5 μm by SEM. Also observed are clusters with near spherical shape clinging around the pores believed to be Ge or GeO2. The EDX spectrum suggests the presence of Ge or GeO2 on and inside the pore structure. Raman spectrum showed that good crystalline structure of the Ge can be produced inside the silicon pores. XRD showed the presence of a Ge phase with the diamond structure by (111), (220), and (400) reflections. Finally, current‐voltage (I‐V) measurement of the Si/Ge/PS MSM photodetector was carried out. It showed lower dark currents compared to control device of Si. The device showed enhanced current gain compared to conventional Si device which can be associated with the presence of Ge nanostructures in the PS.Originality/valueThis paper shows that it is possible to grow Ge nano/microstructure on PS by using a simple and low‐cost method of thermal evaporation and thermal annealing and demonstrates potential MSM photodetector IV characteristics from the device.

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Porous silicon as a low dimensional and optical material

Cited by 4 publications

References 11 publications

Porous Silicon-based Electrochemical Biosensors

Porous Silicon-based Electrochemical Biosensors

Investigation of 1d Photonic Crystal Based on Nano-porous Silicon Multilayer for Optical Filtering

Study of Ge embedded inside porous silicon for potential MSM photodetector

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