Pore Structure of Porous Silicon Formed on a Lightly Doped Crystal Silicon

Ruike, Masatoshi; Houzouji, M.; Motohashi, Akira; Murase, Norio; Kinoshita, Akira; Kaneko, Katsumi

doi:10.1021/la960185g

Cited by 30 publications

(28 citation statements)

References 16 publications

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“…From gas adsorption isotherms the porosity of the layers can be deduced (8,9). Our gas adsorption results for porosity correspond closely to those attained from the proven gravimetric method for porosity determination (8).…”

Section: Ps Property Characterizationsupporting

confidence: 77%

“…The thermodynamical approach known as the BJH method is used to analyze the isotherms and obtain a pore size distribution (8,10). Ruike et al in (9) demonstrates on a 20 Ohm-cm Si sample, a mean pore diameter of 3.1 nm, and a much broader distribution of pore sizes (1.8-5.2 nm) at l0 mA/cm 2 compared to our results.…”

Section: Ps Property Characterizationsupporting

confidence: 65%

“…Upon desorption, a hysteresis results from the inherently different conditions of desorption compared to adsorption (11). For the case of lightly doped p-type Si, the microstructure of the material is observed to be an interconnected fine pore structure (9). In such a system, it is recommended that the adsorption curve be used for pore size analysis (9).…”

Section: Ps Property Characterizationmentioning

confidence: 99%

“…For the case of lightly doped p-type Si, the microstructure of the material is observed to be an interconnected fine pore structure (9). In such a system, it is recommended that the adsorption curve be used for pore size analysis (9). The thermodynamical approach known as the BJH method is used to analyze the isotherms and obtain a pore size distribution (8,10).…”

Section: Ps Property Characterizationmentioning

confidence: 99%

“…Our work shows that the mean pore diameter increases from 3.3 to 4.5 nm in this method. Authors seem to differ in their approach on preparing samples for gas adsorption measurement, specifically if they render freestanding PS films, or measure the PS film with the bulk Si substrate (6,8,9). To our knowledge there no articles reporting on pore size distributions of free standing PS compared to PS incorporated in bulk Si.…”

Section: Ps Property Characterizationmentioning

confidence: 99%

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Characterization and Improvements to Porous Silicon Processing for Nanoenergetics

Becker¹,

Currano²,

Churaman³

2009

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Sensors and Electron Devices Directorate, ARLApproved for public release; distribution unlimited. ii REPORT DOCUMENTATION PAGEForm Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YYYY) February 20092. REPORT TYPE ARL-TR-4717 SPONSOR/MONITOR'S ACRONYM(S) 9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) SPONSOR/MONITOR'S REPORT NUMBER(S) DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution unlimited. SUPPLEMENTARY NOTES ABSTRACTNano-porous silicon offers a large surface area to volume ratio typical of nano materials and contains a network of pores that can be filled with oxidant. When a silicon fuel source is combined with an oxidant on the nano-scale, kinetic limitations of silicon oxidation are overcome and an explosive reaction is realized. We present a characterization of lightly doped p-type silicon for nanoenergetic porous silicon (PS) applications. Using gas adsorption measurements and gravimetric techniques, we characterize pore size, porosity, specific surface area, and thickness of PS thin films. Additionally, we report on the energetic reaction of the PS/oxidant system and mechanical stability of PS formed under several etch conditions including varied etch current, drying techniques, and annealing. Prior research has not focused on sample preparation methods of PS for gas adsorption measurements, but results presented here indicate that the method of PS sample preparation for gas adsorption isotherm analysis impacts the results. We find that a newly reported gravimetric technique for PS parameter characterization is inconsistent with expected PS property trends for lightly doped p-type Si.

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Section: Ps Property Characterizationsupporting

confidence: 77%

Section: Ps Property Characterizationsupporting

confidence: 65%

Section: Ps Property Characterizationmentioning

confidence: 99%

Section: Ps Property Characterizationmentioning

confidence: 99%

Section: Ps Property Characterizationmentioning

confidence: 99%

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Characterization and Improvements to Porous Silicon Processing for Nanoenergetics

Becker¹,

Currano²,

Churaman³

2009

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DNA Stabilization and Hybridization Detection on Porous Silicon Surface by EIS and Total Reflection FT‐IR Spectroscopy

Vamvakaki

Chaniotakis

2008

Electroanalysis

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Electrochemically etched porous silicon (PSi) is formed and employed as a substrate for the entrapment of oligonucleotides and the subsequent development of stable DNA biosensors. The controlled potential anodic etching of p-type silicon wafers is optimized in order to obtain a surface layer with pore diameters which are close to those of the adsorbed DNA helix. The stabilization and hybridization of DNA inside the PSi layer is confirmed using ATR-FTIR. Moreover hybridization is verified by the large and reproducible impedance changes at the interface layer. The developed PSi DNA sensor paves the way for the label-free detection of oligonucleotide sequences in DNA microarrays and microfabricated PSi field-effect sensors.

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Combustion and Material Characterization of Highly Tunable On‐Chip Energetic Porous Silicon

Piekiel

Morris

Churaman

et al. 2014

Propellants Explo Pyrotec

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We present a comprehensive investigation into the tunable combustion of on‐chip porous silicon energetic materials. The exothermic reaction occurs between high surface area nanoscale porous silicon and a solution‐deposited sodium perchlorate oxidizer that penetrates each pore. The resulting burn rates spanned three orders of magnitude, from 5.2 to 1950 m s−1. Material properties of the porous silicon films were characterized using gas adsorption porosimetry, SEM, and profilometry, over specific surface areas between 191 and 901 m2 g−1, and porosities between 49 and 80 %. Combustion events were characterized using high speed imaging and bomb calorimetry. Results revealed that combustion depended on several material properties including surface area and porosity of the porous silicon substrate, with the peak flame speed occurring at 895 m2 g−1 specific surface area, 3.32 nm pore size, and 72 % porosity. Measured heat of combustion increased with porosity over the range of 65–75 %, up to 22.5 kJ g−1 of porous silicon at 75 % porosity. These measurements along with gravimetric determinations of oxidizer pore loading suggest that the system was typically fuel rich, with macroscopic morphology and porous silicon film mechanical integrity generally limiting the realistic range of porosity values to less than stoichiometric conditions.

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Pore Structure of Porous Silicon Formed on a Lightly Doped Crystal Silicon

Cited by 30 publications

References 16 publications

Characterization and Improvements to Porous Silicon Processing for Nanoenergetics

Characterization and Improvements to Porous Silicon Processing for Nanoenergetics

DNA Stabilization and Hybridization Detection on Porous Silicon Surface by EIS and Total Reflection FT‐IR Spectroscopy

Combustion and Material Characterization of Highly Tunable On‐Chip Energetic Porous Silicon

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