Polytype inclusions and polytype stability in silicon-carbide crystals

Avrov, D. D.; Lebedev, A. A.; Tairov, Yu. M.

doi:10.1134/s1063782616040059

Cited by 12 publications

(3 citation statements)

References 65 publications

(92 reference statements)

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“…D.D. Avrov et al reported that nitrogen actively prevents three-dimensional growth by decreasing the height of microsteps at the crystallization surface and the mechanism of surface-catalytic action of nitogen leds to layer-by-layer growth [10]. However, in the heavily nitrogen-doped 4H-SiC crystals grown, the higher micro steps are generated and that bring about the transformation from threading screw dislocations to basal plane disloations [11].…”

Section: Resultsmentioning

confidence: 99%

Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC

Eun

Yeo

Kim

et al. 2020

MSF

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We investigated the relation between the nucleation of dislocations and the lattice misfits by nitrogen concentration difference between seed and grown crystal during the initial stage of growth. 4H-SiC single crystals were grown with various nitrogen gas flow rates introduced into the crystal growing chamber under the same temperature and pressure to minimize the effect of thermal stress on the nucleation of dislocations. The nitrogen atomic concentrations of grown crystals depended on the introduced nitrogen gas ratios and they highly increased at the very early stage of growth. The generation of new threading dislocations at the interface also was affected by the nitrogen atomic concentrations differences between seed and grown crystals. Very few generated threading dislocations were observed in low nitrogen atomic concentration samples, however nucleation of threading dislocations at the interface were found in high nitrogen atomic concentrations samples. At initial stages of PVT growth process, the generation of threading dislocations induced by lattice misfits originated from nitrogen concentration difference between seed and grown crystals were investigated and found the appropriate nitrogen gas flow rates and profile at the heating and depressurized stage.

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Section: Resultsmentioning

confidence: 99%

Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC

Eun

Yeo

Kim

et al. 2020

MSF

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“…Different polytypes of a given material can be formed under identical temperature, pressure, and concentration conditions. For polytypes, the "syntactic coalescence" of different polytypes, i.e., the simultaneous coexistence of more than one polytype within a crystal or an epitaxial layer [30][31][32][33][34][35][36][37], or polytype inclusion formation after completing a technological process step [37][38][39][40][41][42][43][44][45][46][47][48] or device operation [48][49][50][51] is a common effect. On the other hand, because of the different physical properties of the different polytypes, silicon carbide represents a family of semiconductor materials.…”

Section: Introductionmentioning

confidence: 99%

Imprinting the Polytype Structure of Silicon Carbide by Rapid Thermal Processing

Pezoldt

Cimalla

2020

Crystals

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Silicon carbide is a material with a multistable crystallographic structure, i.e., a polytypic material. Different polytypes exhibit different band gaps and electronic properties with nearly identical basal plane lattice constants, making them interesting for heterostructures without concentration gradients. The controlled formation of this heterostructure is still a challenge. The ability to adjust a defined temperature–time profile using rapid thermal processing was used to imprint the polytype transitions by controlling the nucleation and structural evolution during the temperature ramp-up and the steady state. The influence of the linear heating-up rate velocity during ramp-up and steady-state temperature on the crystal structure of amorphized ion-implanted silicon carbide layers was studied and used to form heteropolytype structures. Integrating the structural selection properties of the non-isothermal annealing stage of the ion-implanted layers into an epitaxial growth process allows the imprinting of polytype patterns in epitaxial layers due to the structural replication of the polytype pattern during epitaxial growth. The developed methodology paves the way for structural selection and vertical and lateral polytype patterning. In rapid thermal chemical vapor deposition, the adjustment of the process parameters or the buffer layer allowed the nucleation and growth of wurtzite silicon carbide.

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“…Theoretical studies on the bulk energy and surface energy of the common SiC polytype show different stability orders, depending on the calculation methods and parameters. − However, all these studies show a small energy difference between 3C, 6H, and 4H SiC. Therefore, during the synthesis process, the SiC polytype could be changed by a small disorder of the crystal structure.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Growth of 6H-SiC and 3C-SiC in an Al–Si–C System at 820 °C: Effect of the Reaction Path on the SiC Polytype

Gao

Nie

et al. 2020

Crystal Growth & Design

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Many of the properties of SiC are decided by the polytype. In the present work, the effect of the reaction path on the SiC polytype is studied. Two kinds of SiC particles were prepared at 820 °C in an Al–Si–C system. Results show that 6H-SiC with a hexagonal structure and 3C-SiC with a face-centered cubic structure were obtained separately with a liquid–solid reaction and master alloy method. Further research revealed that 6H-SiC was formed via a one-step reaction with graphite as the precursor, while 3C-SiC was synthesized via a two-step reaction with Al4C3 as the intermediate product and precursor. A different reaction path and precursors result in a different growth process. 6H-SiC was grown under a polynuclear multilayer growth mechanism, while 3C-SiC was grown by a multiregion transition of Al4C3.

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Polytype inclusions and polytype stability in silicon-carbide crystals

Abstract: On the basis of both published data and our own experimental data we consider the main aspects of the problem related to ensuring polytype stability for ingots of grown 4H and 6H silicon-carbide compounds.

Cited by 12 publications

References 65 publications

Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC

Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC

Imprinting the Polytype Structure of Silicon Carbide by Rapid Thermal Processing

Synthesis and Growth of 6H-SiC and 3C-SiC in an Al–Si–C System at 820 °C: Effect of the Reaction Path on the SiC Polytype

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