Many
of the properties of SiC are decided by the polytype. In the
present work, the effect of the reaction path on the SiC polytype
is studied. Two kinds of SiC particles were prepared at 820 °C
in an Al–Si–C system. Results show that 6H-SiC with
a hexagonal structure and 3C-SiC with a face-centered cubic structure
were obtained separately with a liquid–solid reaction and master
alloy method. Further research revealed that 6H-SiC was formed via
a one-step reaction with graphite as the precursor, while 3C-SiC was
synthesized via a two-step reaction with Al4C3 as the intermediate product and precursor. A different reaction
path and precursors result in a different growth process. 6H-SiC was
grown under a polynuclear multilayer growth mechanism, while 3C-SiC
was grown by a multiregion transition of Al4C3.
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