Polymeric precursor for solution-processed amorphous silicon carbide

Masuda, Takashi; Iwasaka, Akira; Takagishi, Hideyuki; Shimoda, Tatsuya

doi:10.1039/c5tc03169a

Cited by 11 publications

(9 citation statements)

References 45 publications

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“…As the FWHM of this absorption band reaches 50 cm 1 , it is probably composed of many different types of bonds and configurations. We suggest that energetically these chemical groups could be a silylene radical SiH 2 (900-930 cm 1 ), 34 deformation mode of a silyl group SiH 3 (920, 843.5, 939.6, 941 cm 1 ), 35 Si-H bending (937 cm 1 ) 36 or Si-H 2 scissor mode (910 cm 1 ). 37 The time evolution of infrared absorption suggests that hydrogen tends to further react with silicon in the buffer/SLG interface layer.…”

Section: Discussionmentioning

confidence: 99%

Hydrogen intercalation of epitaxial graphene and buffer layer probed by mid-infrared absorption and Raman spectroscopy

2018

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We have measured optical absorption in mid-infrared spectral range on hydrogen intercalated single layer epitaxial graphene and buffer layer grown on silicon face of SiC. We have used attenuated total reflection geometry to enhance absorption related to the surface and SiC/graphene interface. The Raman spectroscopy is used to show presence of buffer layer and single layer graphene prior to intercalation. We also present Raman spectra of quasi free standing monolayer and bilayer graphene after hydrogen intercalation at temperatures between 790 and 1510°C. We have found that although the Si-H bonds form at as low temperatures as 790°C, the well developed bond order has been reached only for samples intercalated at temperatures exceeding 1000°C. We also study temporal stability of hydrogen intercalated samples stored in ambient air. The optical spectroscopy shows on a formation of silyl and silylene groups on the SiC/graphene interface due to the residual atomic hydrogen left from the intercalation process.

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Section: Discussionmentioning

confidence: 99%

Hydrogen intercalation of epitaxial graphene and buffer layer probed by mid-infrared absorption and Raman spectroscopy

2018

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“…The appearance of these new peaks in PSH indicates that pendant hexyl groups are incorporated by hydrosilylation between the silicon skeleton and C≡C bonds. The details of the hydrosilylation and the incorporation of carbon into this polymer were reported previously …”

Section: Resultsmentioning

confidence: 99%

“…The CPS was n ‐doped by dissolving into it appropriate amounts of white phosphorus before polymerization . Then the silicon skeleton in the CPS was functionalized by hydrosilylation . The carbon content in n ‐PSH is defined as the volume ratio (denoted by X ) of [1‐hexyne]/[CPS + 1‐hexyne].…”

Section: Methodsmentioning

confidence: 99%

Properties of Phosphorus‐Doped Silicon‐Rich Amorphous Silicon Carbide Film Prepared by a Solution Process

et al. 2016

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Using a polymeric precursor synthesized from a mixture of cyclopentasilane, white phosphorus, and 1‐hexyne, we deposited phosphorus‐doped silicon‐rich amorphous silicon carbide (a‐SiC) films via a solution‐based process. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross‐linkage. Therefore, the polymeric precursor is sufficiently pure for effective doping and fabricating semiconducting a‐SiC. This study presents the results of a detailed study of the effect of carbon and phosphorus concentrations on the structural, optical, and electrical properties of a‐SiC films. The lowest activation energy for these films is 0.39 eV, which leads to an optical gap and a dark conductivity of 2.1 eV and 109 Ω cm, respectively. Moreover, these films satisfy the Meyer–Neldel rule for thermally activated conductivity, which indicates that white‐phosphorus doping of solution‐processed a‐SiC produces films with the same characteristics as phosphine‐doped vacuum‐processed a‐SiC.

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“…A picture of the a-SiC structure can be described on the basis of FTIR measurements as a disordered a-Si network in which many hydrogen atoms are incorporated in the form of CH n moieties. 7,8,13 Therefore, most of the topological/compositional disorder might stem from the variety of hydrogen configurations around C atoms (CH, CH 2 , and CH 3 ). The influence of hydrogen on the electronic structure in conventional a-SiC films is well revealed through XPS and Auger measurements.…”

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confidence: 99%

“…5,6 In a previous study, we developed polymeric precursor solution (SiC-ink) to prepare semiconducting SiC. 7 An important feature of this polymer is that the synthesis procedure and cross-linkage require neither metal catalyst nor oxidation, resulting in the films with semiconducting properties after sintering. The polymer can be designed to result in a film with Si-rich stoichiometry, whereas the polycarbosilane inevitably provides C-rich stoichiometry.…”

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confidence: 99%

Photoelectron yield spectroscopy and inverse photoemission spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials

et al. 2016

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Phosphorus-doped amorphous silicon carbide films were prepared using a polymeric precursor solution. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage, providing semiconducting properties in the films. The valence and conduction states of resultant films were determined directly through the combination of inverse photoemission spectroscopy and photoelectron yield spectroscopy. The incorporated carbon widened energy gap and optical gap comparably in the films with lower carbon concentrations. In contrast, a large deviation between the energy gap and the optical gap was observed at higher carbon contents because of exponential widening of the band tail.

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Polymeric precursor for solution-processed amorphous silicon carbide

Abstract: Solution-processed a-SiC was realized using polymeric precursor. Polymer-to-ceramic conversion was investigated in this report.

Cited by 11 publications

References 45 publications

Hydrogen intercalation of epitaxial graphene and buffer layer probed by mid-infrared absorption and Raman spectroscopy

Hydrogen intercalation of epitaxial graphene and buffer layer probed by mid-infrared absorption and Raman spectroscopy

Properties of Phosphorus‐Doped Silicon‐Rich Amorphous Silicon Carbide Film Prepared by a Solution Process

Photoelectron yield spectroscopy and inverse photoemission spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials

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