Polylactide−Poly(dimethylsiloxane)−Polylactide Triblock Copolymers as Multifunctional Materials for Nanolithographic Applications

Rodwogin, Marc; Spanjers, Charles S.; Leighton, Chris; Hillmyer, Marc A.

doi:10.1021/nn901190a

Cited by 124 publications

(119 citation statements)

References 48 publications

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“…PLA-b-PDMS is another candidate to obtain small feature sizes since its incompatibility also is larger than that of PS-b-PDMS. Based on the calculations of the interaction parameter between PLA and PDMS, feature sizes as small as 3.5 nm were predicted for PLA-b-PDMS-PLA (0.6-b-1.0-b-0.6 kg mol −1 ) triblock copolymers [143].…”

Section: (Iii) Other Silicon-containing Block Copolymersmentioning

confidence: 99%

Pattern transfer using block copolymers

Gunkel

Russell

2013

Phil. Trans. R. Soc. A.

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To meet the increasing demand for patterning smaller feature sizes, a lithography technique is required with the ability to pattern sub-20 nm features. While top-down photolithography is approaching its limit in the continued drive to meet Moore's law, the use of directed self-assembly (DSA) of block copolymers (BCPs) offers a promising route to meet this challenge in achieving nanometre feature sizes. Recent developments in BCP lithography and in the DSA of BCPs are reviewed. While tremendous advances have been made in this field, there are still hurdles that need to be overcome to realize the full potential of BCPs and their actual use.

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Section: (Iii) Other Silicon-containing Block Copolymersmentioning

confidence: 99%

Pattern transfer using block copolymers

Gunkel

Russell

2013

Phil. Trans. R. Soc. A.

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“…Triblock co-polymer can form more complicated orientation than diblock copolymer [51]. One of the recent achievement of triblock co-polymer patterning is the full pitch 7 nm cylinder by poly(lactide-block-dimethylsiloxane-block-lactide) [52].…”

Section: Polymer Blend and Triblock Co-polymermentioning

confidence: 99%

Directed Self Assembly Materials for Semiconductor Lithography

Minegishi¹,

Naruoka²,

Nagai³

2013

J. Photopol. Sci. Technol.

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The Directed Self Assembly (DSA) method is becoming a key complementary technology for enabling lithographic pattern feature shrinkage. Recent DSA technology has developed remarkable improvements in many aspects of materials and process. Block co-polymer, especially polystyrene-block-polymethylmethacrylate (PS-b-PMMA) is the standard DSA patterning material for lithography. However, the patterning limit of PS-b-PMMA is about 25nmP, and high-χ block co-polymer is necessary for sub 20nmP patterning. Not only block co-polymer, but also underlayer (neutral layer, pinning layer), top coat, and directing pattern forming photoresist are also necessary. In this paper, recent progress of directed self assembly materials and supporting materials are described.

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“…In general, the SFE gap is crucial in nanofabrication, as perpendicular orientation control can be difficult, with the PDMS block exhibiting a lower SFE and tending to segregate easily to the top surface of the thin film. Other Si-containing BCPs have the potential to form sub-10 nm features [18][19][20][21], however they also exhibit drawbacks relating to orientation control.…”

Section: Introductionmentioning

confidence: 99%

Perpendicularly Oriented Cylinders of Si-containing Block Copolymers by Atmospheric Thermal Annealing

Seshimo¹,

Odashima

Maeda

et al. 2016

J. Photopol. Sci. Technol.

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The directed self-assembly (DSA) of block copolymers (BCPs) can realize as one of candidates for next generation lithography. The BCPs for DSA should exhibit a high resolution, an ability to form perpendicularly oriented domains in the thin film by thermal annealing under mild condition, and a high etching selectivity. Here, we report a new Si-containing BCPs targeted to form perpendicularly oriented cylinders in thin films. The hydroxyl groups in the side chains introduced in the Si-containing block provide a good surface free energy (SFE) balance leading to the perpendicular orientation. Furthermore, this orientation can be completed in only one minute atmospheric thermal annealing at 150 °C. Oxygen plasma etching for the thin films results in the achievement of hexagonally packed cylinders.

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Polylactide−Poly(dimethylsiloxane)−Polylactide Triblock Copolymers as Multifunctional Materials for Nanolithographic Applications

Cited by 124 publications

References 48 publications

Pattern transfer using block copolymers

Pattern transfer using block copolymers

Directed Self Assembly Materials for Semiconductor Lithography

Perpendicularly Oriented Cylinders of Si-containing Block Copolymers by Atmospheric Thermal Annealing

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