Directed Self Assembly Materials for Semiconductor Lithography

Abstract

The Directed Self Assembly (DSA) method is becoming a key complementary technology for enabling lithographic pattern feature shrinkage. Recent DSA technology has developed remarkable improvements in many aspects of materials and process. Block co-polymer, especially polystyrene-block-polymethylmethacrylate (PS-b-PMMA) is the standard DSA patterning material for lithography. However, the patterning limit of PS-b-PMMA is about 25nmP, and high-χ block co-polymer is necessary for sub 20nmP patterning. Not only block co-polymer, but also underlayer (neutral layer, pinning layer), top coat, and directing pattern forming photoresist are also necessary. In this paper, recent progress of directed self assembly materials and supporting materials are described.

The Photopolymer Science and Technology Award

“…The DSA utilizes the phase separation of block copolymers and provides further resolution enhancement by the use of chemically and physically pre-patterned surface [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. The major challenge of the DSA is to realize defect-free manufacturing process.…”