Polyimide-passivated pn diodes

Ang, Simon S.; Ulrich, Richard K.; Brown, W.D.; Ranade, R.M.

doi:10.1016/0038-1101(90)90203-q

Cited by 5 publications

(1 citation statement)

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“…However, it has also been found that the effect of sulfur passivation is short lived possibly due to moisture or oxygen penetration into the surface, resulting in the formation of native oxide [14][15][16]. In order to achieve stable passivation, it is necessary to deposit an oxygen-free dielectric capping layer such as polyimide immediately after sulfur treatment [17,18]. The combination of sulfur passivation, which reduces the dark current and polyimide capping layer which protects the passivation effect has been found to be most effective in achieving stable, low dark current for InGaAs/InP photodetectors [18].…”

Section: Introductionmentioning

confidence: 99%

Optimization of surface passivation for InGaAs/InP pin photodetectors using ammonium sulfide

Sheela

DasGupta

2008

Semicond. Sci. Technol.

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In this work, the effect of the process parameters during chemical and electrochemical passivation of InGaAs/InP PIN photodetectors using (NH 4 ) 2 S x (x >1) has been studied in detail. It has been observed that the time of passivation, temperature of the sulfide solution and illumination during electrochemical treatment play significant roles in the efficacy of the passivation process. These parameters therefore have to be carefully optimized in order to reduce the dark current of the detectors to a minimum value. The yield of the process is also found to improve with sulfur passivation.

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