Polyethylene Imine as an Ideal Interlayer for Highly Efficient Inverted Polymer Light‐Emitting Diodes

Kim, Young-Hoon; Han, Tae‐Hee; Cho, Himchan; Min, Sung‐Yong; Lee, Chang‐Lyoul; Lee, Tae‐Woo

doi:10.1002/adfm.201304163

Cited by 201 publications

(174 citation statements)

References 37 publications

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“…In addition to the poor quality of perovskite materials, the unapt structure of LED device also results in the low efficiency of the blue devices. A deep valence band (≈ 6.1 eV) in blue emissive perovskites can lead to a large charge injection barrier for blue PeLEDs, and charge carriers can easily be quenched by the PEDOT:PSS interfaces or the ZnO interfaces . In order to reduce the energy barrier, the hole‐injection‐layer (HIL) and the HTL, a common double‐layer structure, were used in Ruddlesden‐Popper inorganic mixed halide perovskites .…”

Section: Blue Perovskite Ledsmentioning

confidence: 99%

Recent advances and prospects toward blue perovskite materials and light‐emitting diodes

Fang

Zhang

Yuan

et al. 2019

InfoMat

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Perovskite based light‐emitting diodes (PeLEDs) have become a powerful candidate for next‐generation solid‐state lightings and high‐definition displays due to their high photoluminescence quantum yield (PLQY), tunable emission wavelength over the visible spectrum, and narrow emission linewidths. Over the past few years, the development of red‐ and green‐emissive PeLEDs has rapidly increased, and the corresponding external quantum efficiencies (EQE) have exceeded 20%. However, the research progress of blue‐emitting PeLEDs is limited by its poor material quality and inappropriate device structure. Currently, the maximum EQE of blue PeLED is only 6.2%, which is far from the industrialization requirements. In order to promote the development of blue PeLEDs, we summarize the recent research progress of blue perovskite materials and LEDs and discuss several fatal challenges, mainly embodied in low efficiency and poor stability. In order to overcome these challenges, detailed analysis and strategies are put forward in terms of the materials and devices. For the former, we summarize the feasible strategy for the preparation of efficient and stable blue‐emissive perovskites using component engineering. For the latter, we analyze the advantages and limitations of the different strategies for blue‐emissive perovskite in LEDs. At the end of the review, a comprehensive outlook is detailed, including future development directions and several technical problems to be solved. Thus, we aim to highlight the significance and promote the industrialization of PeLEDs.

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Section: Blue Perovskite Ledsmentioning

confidence: 99%

Recent advances and prospects toward blue perovskite materials and light‐emitting diodes

Fang

Zhang

Yuan

et al. 2019

InfoMat

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“…Polyethylenimine ethoxylated (PEIE) has been widely used as interface modified layer in in organic light emitting diodes and organic solar cells [32][33][34][35][36][37][38][39]. Zhou et al [34] has used PEIE to reduce the work function of metals as well as oxide electrodes.…”

Section: Introductionmentioning

confidence: 99%

PEIE capped ZnO as cathode buffer layer with enhanced charge transfer ability for high efficiency polymer solar cells

Cai

Wang

et al. 2015

Synthetic Metals

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“…Successful attempts to introduce an appropriate interlayer to use surface dipoles (17,18) have been reported as well. However, applications in commercial products are still limited to the Significance Organic electronics have vast potential due to the huge space for molecular design and the soft nature of organics.…”

mentioning

confidence: 99%

Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs

Hosono

Kim

Yoshitake

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

111

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Efficient electron transfer between a cathode and an active organic layer is one key to realizing high-performance organic devices, which require electron injection/transport materials with very low work functions. We developed two wide-bandgap amorphous (a-) oxide semiconductors, a-calcium aluminate electride (a-C12A7:e) and a-zinc silicate (a-ZSO). A-ZSO exhibits a low work function of 3.5 eV and high electron mobility of 1 cm 2 /(V · s); furthermore, it also forms an ohmic contact with not only conventional cathode materials but also anode materials. A-C12A7:e has an exceptionally low work function of 3.0 eV and is used to enhance the electron injection property from a-ZSO to an emission layer. The inverted electron-only and organic light-emitting diode (OLED) devices fabricated with these two materials exhibit excellent performance compared with the normal type with LiF/Al. This approach provides a solution to the problem of fabricating oxide thin-film transistor-driven OLEDs with both large size and high stability.inverted OLEDs | electron injection | electron transport | amorphous oxide semiconductor | low work function material E lectronic and photonic devices based on organic semiconductors have attracted much attention due to their intrinsic characteristics that are difficult to achieve in inorganic semiconductors, such as flexibility and the capability of precise molecular design of active organic layers (1-3). However, organic devices suffer from the material properties that organic semiconductors in general have: rather high lowest unoccupied molecular orbital (LUMO) levels and low electron mobilities, such as 10 −6 to 10 −3 cm 2 /(V·s). This leads to inefficiency in electron injection/transport between an electrode and an organic active layer and a large energy loss. In other words, the creation of materials suitable for efficient electron injection layers (EILs) and electron transport layers (ETLs), with very low work functions, reasonable chemical stability, and high electron mobility, should lead to organic devices with improved performance.Organic light-emitting diodes (OLEDs) are regarded as nextgeneration flat-panel displays (4). Although small high-resolution OLED displays are used widely for smart phones/tablets, and large televisions are being commercialized, several issues still remain, such as lifetime, image sticking, power consumption, and production cost (5). The recent high-resolution OLED pixels (6) with reduced aperture ratios [areal ratio of thin-film transistor (TFT) to pixel] raise the importance of the top emissiontype structure for practical use. For large OLEDs, it is unrealistic to use low-temperature polycrystalline silicon (LTPS) TFTs for backplanes. Only oxide TFTs, as represented by a-In-Ga-Zn-O (a-IGZO) (7), are practical candidates for the backplane (8, 9). The current small OLEDs use normal-type structures combined with p-channel LTPS TFTs. However, only n-channel TFTs are possible for oxide TFTs in actual applications. Simple substitution of the p-channel LTPS TFTs wi...

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Polyethylene Imine as an Ideal Interlayer for Highly Efficient Inverted Polymer Light‐Emitting Diodes

Cited by 201 publications

References 37 publications

Recent advances and prospects toward blue perovskite materials and light‐emitting diodes

Recent advances and prospects toward blue perovskite materials and light‐emitting diodes

PEIE capped ZnO as cathode buffer layer with enhanced charge transfer ability for high efficiency polymer solar cells

Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs

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