Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface

Low-temperature Si epitaxy on large-grained polycrystalline seed layers by electron–cyclotron resonance chemical vapor deposition

“…There are different mechanisms under discussion for the formation of preferential orientation. The impact of the annealing temperature on the crystal orientation has been demonstrated by Kim et al [7]. Very recently investigations performed by our group have also shown that the properties of the thin oxide layer between the aluminum and the a-Si layer have influence on the crystal orientation.…”

Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

“…4. It is well known that the presence of native Al oxide at the a-Si/Al interface plays an essential role in the final crystal quality of poly-Si layers [5][6][7][21][22][23][24]. We believe that the rough surface of the Al layers produced by sputtering gave rise to non-uniform Al oxide layers, which influenced the crystallization Table 2.…”

“…The purpose of the present study was to fabricate BaSi 2 layers on SiO 2 (fused silica) and to investigate its photoresponse properties with regard to application to inexpensive solar cells. For this purpose, the aluminum-induced crystallization (AIC) was employed [5][6][7]. AIC is a metal induced crystallization (MIC) [8] technique that enables low-temperature crystallization of amorphous Si (a-Si) below the eutectic temperature of 577 1C, and leads to large grained poly-Si layers.…”

Large-grained polycrystalline silicon on glass for thin-film solar cells

“…Kim et al have shown that the preferential (100) orientation can be influenced by the annealing temperature [16]. With decreasing annealing temperature the preferential (100) orientation increases.…”