Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition

Sánchez, G.; Wu, Aoli; Tristant, Pascal; Tixier, C.; Soulestin, Bernard; Desmaison, J.; Alles, A. Bologna

doi:10.1016/j.tsf.2007.09.030

Cited by 13 publications

(9 citation statements)

References 21 publications

(37 reference statements)

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“…This further supports the occurrence of p-ZnO as observed earlier in our Hall measurement and XRD results. There is a peak around 2357 cm À1 , which is not attributed to any of the possible bonds such as Zn-O, Al-O, Al-N. With an observation of similar peak at around 2150 cm À1 in AlN films, Sanchez et al [28] has reported that this has been assigned to the multiple impurity bond of nitrogen.…”

Section: Ftir Studiesmentioning

confidence: 96%

Codoped (AlN) and monodoped (Al) ZnO thin films grown by RF sputtering: A comparative study

Bhuvana

Elanchezhiyan

Gopalakrishnan

et al. 2008

Applied Surface Science

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Section: Ftir Studiesmentioning

confidence: 96%

Codoped (AlN) and monodoped (Al) ZnO thin films grown by RF sputtering: A comparative study

Bhuvana

Elanchezhiyan

Gopalakrishnan

et al. 2008

Applied Surface Science

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“…In addition, the absorption peak of Al−N bond is observed at 672 cm −1 . 46 This implies that AlN nanoparticles were released from AlN/SCF/EP bulk composite and compacted into the tribofilm.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Extraordinarily Low Friction and Wear of Epoxy-Metal Sliding Pairs Lubricated with Ultra-Low Sulfur Diesel

Guo

et al. 2018

ACS Sustainable Chem. Eng.

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Utilization of ultralow sulfur diesel (ULSD) having intrinsically low lubricity has been mandated in more and more countries for meeting increasingly stringent emission regulations. Our work demonstrated that epoxy hybrid nanocomposites, reinforced with carbon fibers and Al 2 O 3 or AlN nanoparticles, offered extraordinarily low friction and wear when lubricated with ULSD. More interestingly, when sliding took place under lubricant starvation conditions, almost no wear took place thanks to the formation of a nanostructured tribofilm. We investigated comprehensively heat and stress activated physical and chemical actions occurring at friction interfaces. It was revealed that the lubricious and robust tribofilm grew while complex molecular species released from the nanocomposites were fed constantly onto the contact zone. The present work paved a route for tuning interface nanostructures of large numbers of motion components subjected to harsh lubrication conditions toward extremely high energy efficiency and long lifespan.

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“…The AlN films were deposited by many methods such as RF magnetron sputtering [6], microwave plasma enhanced chemical vapor deposition [7], DC reactive magnetron sputtering [8] molecular beam epitaxy [9,10], ion beam-assisted deposition [11] and plasma assisted CVD [12]. Among these methods sputtering is an important industrial method for the fabrication of thin films for device fabrication purpose.…”

Section: Introductionmentioning

confidence: 99%

Study of field emission and dielectric properties of AlN films prepared by DC sputtering technique at different substrate temperatures

et al. 2010

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Nanocrystalline AlN thin films were prepared via DC sputtering technique at different substrate temperature. The crystal orientation and particle size of aluminum nitride thin films were investigated by XRD analysis. Study indicated that the sample contained pure phase hexagonal AlN nanoparticles with a single peak corresponding to the (100) planes. The peak at 665 cm -1 in the FTIR spectrum of film was assigned to the LO phonon of hexagonal AlN. The particle size of the film, prepared at substrate temperature 200 0 C was about 9.5 nm, as investigated by atomic force microscope. Field emission study indicated that it can be used as a good field emitter. Turn-on field (E to ) of 15.02 V/Pm was observed for the AlN films synthesized at substrate temperature 200 0 C. Dielectric constant of the AlN film was found nearly independent of frequencies in the measured frequency range 1 KHz to 1 MHz, i.e. in the audio frequency range. The values of dielectric constant ( H ) were 10.07, 9.46 and 8.65 for the film prepared at 70 0 C, 150 0 C and 200 0 C, respectively, at frequency 1 KHz.

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Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition

Cited by 13 publications

References 21 publications

Codoped (AlN) and monodoped (Al) ZnO thin films grown by RF sputtering: A comparative study

Codoped (AlN) and monodoped (Al) ZnO thin films grown by RF sputtering: A comparative study

Extraordinarily Low Friction and Wear of Epoxy-Metal Sliding Pairs Lubricated with Ultra-Low Sulfur Diesel

Study of field emission and dielectric properties of AlN films prepared by DC sputtering technique at different substrate temperatures

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