Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/GaAs hybrid solar cells with 13% power conversion efficiency using front- and back-surface field

Lin, Chien-Chung; Sun, Kien-Wen; Liu, Qiming; Shirai, Hajime; Lee, C. P.

doi:10.1364/oe.23.0a1051

Cited by 15 publications

(15 citation statements)

References 27 publications

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“…There is an abundance of reports on hybrid GaAs solar cells utilizing p-type organic material to form the junction. Some of these p-type organic materials which have shown exciting results include PEDOT:PSS and its derivatives [121,122,[133][134][135][136], poly(3-hexylthiophene) [137], P3HT [137][138][139][140], and CuPc [141,142]. Other than planar solar cells, organic material remains a popular choice for making a hybrid solar cell with nanowires [124,137,140,143].…”

Section: Organic Materialsmentioning

confidence: 99%

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Non-epitaxial carrier selective contacts for III-V solar cells: A review

Raj

Tan

Jagadish

2020

Applied Materials Today

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Section: Organic Materialsmentioning

confidence: 99%

“…D schematic and a band diagram of an n-GaAs based hybrid solar cell using PEDOT:PSS as a p-type contact is shown in Figure10(a)[136]. Using the structure shown in Figure10(a), Lin et al were able to achieve an efficiency of 8.99%.…”

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confidence: 99%

Non-epitaxial carrier selective contacts for III-V solar cells: A review

Raj

Tan

Jagadish

2020

Applied Materials Today

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“…The previous V OC record of 0.92 V was achieved with electron-selective ZnO/ITO contact on GaAs . Compared to the Schottky-type GaAs solar cells with p-type top layers such as polymers and graphene, − the V OC achieved here is ∼300 mV higher. The high V OC in the GaAs/CuI solar cells is attributed to the low interface trap density and suitable band alignment between CuI and GaAs, as discussed later.…”

Section: Resultsmentioning

confidence: 60%

CuI as a Hole-Selective Contact for GaAs Solar Cells

Haggrén

Raj

Haggren

et al. 2022

ACS Appl. Mater. Interfaces

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Carrier-selective contacts have emerged as a promising architecture for solar cell fabrication. In this report, the first hole-selective III–V semiconductor solar cell is demonstrated using copper iodide (CuI) on i-GaAs. Surface passivation quality of GaAs is found to be essential for open-circuit voltage (V OC), with good correlation between photoluminescence properties of the GaAs layer and the V OC. Passivation with <10 nm thick In0.49Ga0.51P layers is shown to provide an over 300 mV improvement. Oxygen-rich CuI is formed by natural oxidation in the atmosphere, and the increased oxygen content of ∼10% is validated by energy-dispersive X-ray measurements. The oxygen incorporation is shown to improve hole selectivity and thus solar conversion efficiency. Ultraviolet photoelectron spectroscopy indicates a high work function of ∼6 eV for the oxygen-rich CuI. With optimized GaAs surface passivation and oxygen-rich CuI, a V OC of nearly 1 V and a solar conversion efficiency of 13.4% are achieved. The solar cell structure includes only undoped GaAs, a surface passivation layer, and non-epitaxial CuI contact and is therefore very promising to various low-cost crystal growth methods. The results have a significant impact on III–V solar cell fabrication and costs as it (i) enables fully carrier-selective architectures, (ii) reduces cell fabrication complexity, and (iii) is suitable for layers grown by low-cost crystal growth techniques.

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“…To minimise carrier recombination, the search for a suitable inorganic HTM must be directed by the necessity for high carrier mobility, low cost, and a defect-free interface with the absorbing layer [13]. In comparison to spiro-OMeTAD, an optimal type of HTM is inorganic p-type InGaAs, which has superior chemical stability, increased hole mobility, and cheap cost [14]. As a result, p-InGaAs as HTM is an unique perovskite solar cell concept.…”

Section: Introductionmentioning

confidence: 99%

An improved assessment of high efficiency heterojunction perovskite solar cell employing InxGa1-xAs as efficient hole transport layer

Khaouani

Bencherif

Kourdi³

2022

Preprint

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Spiro-OMeTAD is an excellent nominee for HTM application, but its high hygrpscopicity, inclination to crystallize, and fragility to moisture and heat make it unsuitable for solar cells. So, it is of interest to investigate other HTM candidate. In this paper, the use of p-type InGaAs as hole transport materials (HTM) has been suggested to enhance the performance of perovskite-based solar cell (PSC). The simulation of hybrid CH3NH3PbI3/ InGaAs planar heterojunction perovskite solar cell is performed using Atlas Silvaco simulator. In order to confirm the predictability of the proposed simulation methodology, the conventional ITO/TiO2/MAPbI3/Spiro-OMeTAD structure is simulated and good coincidence with experimental results shown. The proposed design using InGaAs as HTM outperforms the conventional device in terms of short-circuit current density (JSC) of 37.2 mA/cm2, open-circuit voltage (VOC) of 1V, fill factor (FF) of 80% and high value of efficiency. Besides, The finding show that with In content of x=0.7 the efficiency will improved to reach a value of about 30%.

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Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/GaAs hybrid solar cells with 13% power conversion efficiency using front- and back-surface field

Abstract: PSS is used as a hole-transporting conducting layer for hybrid cells.

Cited by 15 publications

References 27 publications

Non-epitaxial carrier selective contacts for III-V solar cells: A review

Non-epitaxial carrier selective contacts for III-V solar cells: A review

CuI as a Hole-Selective Contact for GaAs Solar Cells

An improved assessment of high efficiency heterojunction perovskite solar cell employing InxGa1-xAs as efficient hole transport layer

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