Polarized photoluminescence from single wurtzite InP/InAs/InP core-multishell nanowires

Masumoto, Yasuaki; Hirata, Yasushi; Mohan, Premila; Motohisa, Junichi; Fukui, Takashi

doi:10.1063/1.3592855

Cited by 12 publications

(12 citation statements)

References 17 publications

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“…However the degree of polarization was not 100% since the optical 43 | P a g e antenna effect in the thin NWs favors the parallel polarization restricting attainable polarization degrees. These results were afterwards confirmed for other material systems [81]- [83].…”

Section: Experimental Observationssupporting

confidence: 76%

Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures

Filippov¹

2016

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Abstract.Low-dimensional semiconductor structures, such as one-dimensional nanowires (NWs) and zero-dimensional quantum dots (QDs), are materials with novel fundamental physical properties and a great potential for a wide range of nanoscale device applications. Here, especially promising are direct bandgap II-VI and III-V compounds and related alloys with a broad selection of compositions and band structures. For examples, NWs based on dilute nitride alloys, i.e. GaNAs and GaNP, provide both an optical active medium and well-shaped cavity and, therefore, can be used in a variety of advanced optoelectronic devices including intermediate band solar cells and efficient light-emitters. Self-assembled InAs QDs formed in the GaAs matrix are proposed as building blocks for entangled photon sources for quantum cryptography and quantum information processing as well as for spin light emitting devices. ZnO NWs can be utilized in a variety of applications including efficient UV lasers and gas sensors. In order to fully explore advantages of nanostructured materials, their electronic properties and lattice structure need to be comprehensively characterized and fully understood, which is not yet achieved in the case of aforementioned material systems. The research work presented this thesis addresses a selection of open issues via comprehensive optical characterization of individual nanostructures using micro-Raman (-Raman) and microphotoluminescence (-PL) spectroscopies.In paper 1 we study polarization properties of individual GaNP and GaP/GaNP core/shell NWs using polarization resolved µ-PL spectroscopy. Near band-edge emission in these structures is found to be strongly polarized (up to 60% at 150K) in the orthogonal direction to the NW axis, in spite of their zinc blende (ZB) structure. This polarization response, which is unusual for ZB NWs, is attributed to the local strain in the vicinity of the N-related centers participating in the radiative recombination and to their preferential alignment along the growth direction, presumably caused by the presence of planar defects. Our findings therefore show that defect engineering via alloying with nitrogen provides an additional degree of freedom to control the polarization anisotropy of III-V nanowires, advantageous for their applications as a nanoscale source of polarized light.Structural and optical properties of novel coaxial GaAs/Ga(N)As NWs grown on Si II substrates, were evaluated in papers 2-4. In paper 2 we show by using -Raman spectroscopy that, though nitrogen incorporation shortens a phonon correlation length, the GaNAs shell with [N]<0.6% has a low degree of alloy disorder and weak residual strain.Additionally, Raman scattering by the GaAs-like and GaN-like phonons is found to be enhanced when the excitation energy approaches the E + transition energy. This effect was attributed the involvement of intermediate states that were created by N-related clusters in proximity to the E + subband. Recombination processes in these structures were studied in paper 3 by ...

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Section: Experimental Observationssupporting

confidence: 76%

Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures

Filippov¹

2016

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“…[221][222][223][224][225][226][227][228] An analogous synthetic approach for generating epitaxial core-multishell nanopillars based on GaAs (doped with nitrogen and phosphorous) and InGaP has been described. for solar cell, photoluminescence and other photovoltaic applications.…”

Section: Synthesis Of Core-shell Nanocatalystsmentioning

confidence: 99%

Core–shell nanoparticles: synthesis and applications in catalysis and electrocatalysis

et al. 2015

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Core-shell nanoparticles (CSNs) are a class of nanostructured materials that have recently received increased attention owing to their interesting properties and broad range of applications in catalysis, biology, materials chemistry and sensors. By rationally tuning the cores as well as the shells of such materials, a range of core-shell nanoparticles can be produced with tailorable properties that can play important roles in various catalytic processes and offer sustainable solutions to current energy problems. Various synthetic methods for preparing different classes of CSNs, including the Stöber method, solvothermal method, one-pot synthetic method involving surfactants, etc., are briefly mentioned here. The roles of various classes of CSNs are exemplified for both catalytic and electrocatalytic applications, including oxidation, reduction, coupling reactions, etc.

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“…In MOVPE, InP shell growth can be promoted compared to axial growth by increasing the growth temperature. At elevated temperatures, pyrolysis of the metalorganic precursors occurs on the nanowire sidewalls, resulting in lateral vapour-solid deposition [10][11][12][13][14]. An alternative technique for nanowire growth is MBE where growth is dominated by diffusive transport of adatoms from the substrate surface or nanowire sidewalls to the Au nanoparticle at the tip of the nanowire.…”

Section: Introductionmentioning

confidence: 99%

“…Once the metal nanoparticle is supersaturated, precipitation of the vapour-deposited material occurs, resulting in growth of the nanowire with the Au particle remaining at the tip of the nanowire. The VLS process is typically implemented using molecular beam epitaxy (MBE) [9] or metalorganic vapour phase epitaxy (MOVPE) [10][11][12][13][14]. In MOVPE, InP shell growth can be promoted compared to axial growth by increasing the growth temperature.…”

Section: Introductionmentioning

confidence: 99%

Facilitating growth of InAs–InP core–shell nanowires through the introduction of Al

Haapamaki¹,

Baugh²,

LaPierre³

2012

Journal of Crystal Growth

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a b s t r a c tInAs nanowires were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GSMBE) system. Passivation of the InAs nanowires using InP shells proved difficult due to the tendency for the formation of axial rather than core-shell structures. To circumvent this issue, Al x In 1 À x As or Al x In 1 À x P shells with nominal Al composition fraction of x ¼ 0.20, 0.36, or 0.53 were grown by direct vapour-solid deposition on the sidewalls of the InAs nanowires. Characterisation by transmission electron microscopy revealed that the addition of Al in the shell resulted in a remarkable transition from the VLS to the vapour-solid growth mode with uniform shell thickness along the nanowire length. Possible mechanisms for this transition include reduced adatom diffusion, a phase change of the Au seed particle, and surfactant effects. The InAs-AlInP coreshell nanowires exhibited misfit dislocations, while the InAs-AlInAs nanowires with lower strain appeared to be free of dislocations.

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Polarized photoluminescence from single wurtzite InP/InAs/InP core-multishell nanowires

Cited by 12 publications

References 17 publications

Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures

Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures

Core–shell nanoparticles: synthesis and applications in catalysis and electrocatalysis

Facilitating growth of InAs–InP core–shell nanowires through the introduction of Al

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