Polarized photoluminescence from point emitters in orderedGaxIn1−xP

Abstract

A wide-field microphotoluminescence study of ordered Ga x In 1−x P reveals spatially isolated submicron emission centers that emit in a spectral band 20 meV below previously studied PL features. The density of these centers is correlated with the presence of sharp PL lines reported in the low-energy PL band. Polarization analysis shows that many centers are very highly linearly polarized, contrary to models of quantum disks aligned at antiphase boundaries normal to the ordering direction. Orientations of the linearly polarized centers are found in some cases to be highly aligned along specific crystal directions that are not simply related to ordering.

Effect of nitrogen annealing on the optoelectronic properties of manganese vanadate

“…Lack of spatial variation suggests that emission is not a localized effect but due to an ensemble of native defects distributed across the sample. A similar interpretation has been used to describe sharp peaks in III-V compounds [40,41].…”