2019
DOI: 10.1016/j.jlumin.2019.04.033
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High linear polarization of photoluminescence of GaInP epilayers at low temperature

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Cited by 3 publications
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“…The degree of PL polarization memory was defined as P PL = (PL || – PL ⊥ )/(PL || + PL ⊥ ), where PL || (PL ⊥ ) is the PL emission with polarization parallel (perpendicular) to the excitation beam. It is clearly seen that the PL emission is partially polarized at a short wavelength, with P PL of 12% around the peak of n = 2 (PL 2 ). In Figure c, the angular (θ) dependent PL 2 at 586 nm at 300 K is shown, where θ is the angular difference between polarization directions of the excitation laser beam and polarizer before the spectrometer.…”
Section: Resultsmentioning
confidence: 99%
“…The degree of PL polarization memory was defined as P PL = (PL || – PL ⊥ )/(PL || + PL ⊥ ), where PL || (PL ⊥ ) is the PL emission with polarization parallel (perpendicular) to the excitation beam. It is clearly seen that the PL emission is partially polarized at a short wavelength, with P PL of 12% around the peak of n = 2 (PL 2 ). In Figure c, the angular (θ) dependent PL 2 at 586 nm at 300 K is shown, where θ is the angular difference between polarization directions of the excitation laser beam and polarizer before the spectrometer.…”
Section: Resultsmentioning
confidence: 99%