Optical study of clustering in III-V semiconductor quaternary solid solutions

Prutskij, T.; Seredin, P. V.

doi:10.1016/j.jlumin.2020.117830

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…For example, atomic ordering was taken into consideration more often in GaInP material, [14] quantum-dots-like formation was found in GaAsNP [15] and GaAs(In, Sb)N epilayers related to the incorporation of group V element by analyzing low-temperature photoluminescence (PL) spectra, [16,17] and atomic content fluctuation has been experimentally observed in InGaAsP and InGaAsB epilayers. [18,19] Just like quantumwell (QW) structures, an undulating energy landscape caused by localized potential fluctuations in the band structure was formed. [20] Under these circumstances, localization and delocalization of carriers can be simultaneously existed, which will significantly affect the optical and electrical properties of devices.…”

Section: Introductionmentioning

confidence: 99%

Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell

Li¹,

Yang²,

Long³

et al. 2023

Chinese Phys. B

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The internal behaviors of carriers in InGaAsP single-junction solar cell are investigated by using electroluminescence (EL) measurements. Two emission peaks can be observed in current-dependent electroluminescence spectra at low temperatures, and carrier localization exists for both peaks under low excitation. The trends of power index α extracted from excitation-dependent EL spectra at different temperatures imply that there exists a competition between Shockley–Read–Hall recombination and Auger recombination. Auger recombination becomes dominant at high temperatures, which is probably responsible for the lower current density of InGaAsP solar cell. Besides, the anomalous “S-shape” tendency with the temperature of band-edge peak position can be attributed to potential fluctuation and carrier redistribution, demonstrating delocalization, transfer, and redistribution of carriers in the continuum band-edge. Furthermore, the strong reduction of activation energy at high excitations indicates that electrons and holes escaped independently, and the faster-escaping carriers are holes.

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Section: Introductionmentioning

confidence: 99%

Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell

Li¹,

Yang²,

Long³

et al. 2023

Chinese Phys. B

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“…15) The QCSE due to the polarization induced electric fields has been generally observed with photoluminescence spectroscopy and cathodoluminescence (CL) spectroscopy. [16][17][18] In this work, based on a scanning electron microscope (SEM) and a time-of-flight secondary ion mass spectrometry (TOF-SIMS) facility which are interconnected via ultra-high vacuum (UHV), a characterization strategy has been developed by combining the CL spectroscopy and the technique of ion sputtering to investigate depth-dependent polarization effects as well as the interactions of electric fields of different origins in quantum wells. An AlGaN MQWs sample was employed in this study.…”

mentioning

confidence: 99%

Depth profiled polarization effects in AlGaN quantum wells probed with interconnected cathodoluminescence spectroscopy and ion sputtering

Chen

Zheng

et al. 2022

Appl. Phys. Express

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Based on interconnected ion sputtering and cathodoluminescence spectroscopy, an optical spectroscopic strategy has been developed to profile depth-dependent polarization effects in an AlGaN multiple-quantum-well (MQW) structure. Two emission bands at about 258 nm and 315 nm have been identified to originate from the quantum wells and Ga-rich domains, respectively, and their depth-dependent spectral characteristics reveal that the spontaneous polarization dominates the piezoelectric polarization in the quantum wells, and the emission wavelengths vary with respect to the etching depth due to interactions of the spontaneous polarization field with the piezoelectric polarization field and the surface charge induced electric field.

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Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition

et al. 2022

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Optical study of clustering in III-V semiconductor quaternary solid solutions

Cited by 3 publications

References 15 publications

Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell

Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell

Depth profiled polarization effects in AlGaN quantum wells probed with interconnected cathodoluminescence spectroscopy and ion sputtering

Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition

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