2016
DOI: 10.1364/ol.41.003229
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Polarization rotator based on augmented low-index-guiding waveguide on silicon nitride/silicon-on-insulator platform

Abstract: Using a newly proposed augmented low-index-guiding scheme with silicon nitride/silicon dual-core waveguide, we have designed, fabricated, and characterized a transverse electric (TE) to transverse magnetic (TM) and TM-to-TE compact polarization rotator. The polarization rotation is realized in an asymmetric directional coupler. The measured peak conversion efficiencies for the TE-to-TM and TM-to-TE rotations are approximately 97%. The measured polarization extinction ratio for the TE-to-TM rotation is greater … Show more

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Cited by 26 publications
(6 citation statements)
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“…For TE mode isolators, TE-TM polarization rotators (PRs) are inserted at both ends of the TM isolators [16,31,35]. The polarization rotator was based on the mode evolution mechanism to rotate the fundamental TE mode into the fundamental TM mode [36,37]. For the narrow-band optical isolators based on racetrack resonators, the MO waveguide is arranged outside the coupling region between the ring waveguide and the bus waveguide.…”
Section: Device Design and Fabricationmentioning
confidence: 99%
“…For TE mode isolators, TE-TM polarization rotators (PRs) are inserted at both ends of the TM isolators [16,31,35]. The polarization rotator was based on the mode evolution mechanism to rotate the fundamental TE mode into the fundamental TM mode [36,37]. For the narrow-band optical isolators based on racetrack resonators, the MO waveguide is arranged outside the coupling region between the ring waveguide and the bus waveguide.…”
Section: Device Design and Fabricationmentioning
confidence: 99%
“…This can lead to designs of new types of polarization control devices similar to those designed using hybrid plasmonic waveguides and silicon slot waveguides , but with a simpler and more flexible fabrication process. We have already designed and implemented ALIG based polarization rotator and polarization splitters, which we reported in separate publications . Another intriguing possibility is the integration of the ALIG with electro‐optic polymers for the design of new kind of electro‐optic modulators.…”
Section: Discussionmentioning
confidence: 99%
“…The Si3N4 platform alone and with III-V material has broadly been used for the polarization rotation and modulators [51][52][53][54][55], resonators and photodetectors [56][57][58][59][60][61][62][63][64][65], grating couplers [66][67][68][69][70], sensing applications [71][72][73][74], highperformance lasers on-chip, delay lines, optical filters, and optical frequency comb generation [75][76]polarization beam splitters and couplers [77][78][79][80]. The foundries all over the world, such as CEA-Leti, AIM photonics, ST microelectronics, and others have announced Si photonics as a platform that integrates Si3N4 waveguide layer onto Si waveguides for various applications [81][82][83][84][85][86][87].As the world is moving towards the high signal bandwidth and data rate, Si3N4 waveguide technology with SOI and III-V platform has recently opened up the new quarters for on-chip applications.…”
Section: Introductionmentioning
confidence: 99%