Polarization-insensitive silicon nitride arrayed waveguide grating

Han, Qi; St-Yves, Jonathan; Chen, Yuxuan; Ménard, Michel; Shi, Wei

doi:10.1364/ol.44.003976

Cited by 26 publications

(13 citation statements)

References 20 publications

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“…Following this, a gradual increase in reflection of both types of polarized light appeared at AOI values over 40°, although reflection of the p-polarized light was greater. This inverse polarization phenomenon is characteristic of moth eye-type structures with low reflectivity. , Therefore, these results confirm that the MT-Si nanocones behave as a moth eye-type antireflective surface with gradual changes in refractive index.…”

Section: Resultssupporting

confidence: 71%

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Silicon Nanocone Arrays via Pattern Transfer of Mushroomlike SiO₂ Nanopillars for Broadband Antireflective Surfaces

Yamada

Iizuka

Mizoshita

2020

ACS Appl. Nano Mater.

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Broadband antireflection is crucial to improving the performance of various optical, photofunctional, and optoelectronic devices. The present study demonstrates an unconventional etching process employing pillar-shaped SiO2 masks that allows the synthesis of black silicon exhibiting ultralow reflectivity. In this process, the morphologies of mushroomlike SiO2 nanopillar arrays fabricated from self-assembled block copolymers and having a high aspect ratio are drastically changed during etching. This effect results in multistage etching of an underlying silicon substrate to produce a silicon nanocone array with an average height of 800 nm and multiple nanoscale tips. This silicon nanostructure exhibits a low reflectance of less than 0.06% when exposed to light at a normal angle of incidence over a wide range of wavelengths from 300 to 900 nm. In addition, the reflectance remains as low as 1.6% or less for incident angles of 0 to 60°, and this omnidirectional antireflection behavior appears in both s- and p-polarized light. A silicon nanocone array fabricated in this manner effectively absorbs UV laser light and was applied as an inorganic substrate for matrix-free laser desorption/ionization mass spectrometry. The morphology of this material facilitated the desorption of various analyte molecules, including drugs, peptides, and proteins with masses up to approximately 17 kDa. This work demonstrates an alternative approach to obtaining black silicon that has considerable potential for applications in various fields, such as optics, optoelectronics, and chemical analysis.

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Section: Resultssupporting

confidence: 71%

“…This inverse polarization phenomenon is characteristic of moth eye-type structures with low reflectivity. 42,43 Therefore, these results confirm that the MT-Si nanocones behave as a moth eye-type antireflective surface with gradual changes in refractive index.…”

Section: Resultssupporting

confidence: 70%

Silicon Nanocone Arrays via Pattern Transfer of Mushroomlike SiO₂ Nanopillars for Broadband Antireflective Surfaces

Yamada

Iizuka

Mizoshita

2020

ACS Appl. Nano Mater.

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“…As expected, the ∼39 nm blue-shifted side lobes are still somewhat present, however, future designs can incorporate polarization insensitive waveguides [35], [36] such that the side lobes can be eliminated with XT <−25 dB. Recently, it was shown that polarization insensitive AWGs can be achieved when both channel spacing and center wavelength of TE and TM modes are aligned [37]. Additional simulations show that it may be ideal to use 400 x 400 nm waveguides, since both polarization insensitivity and single mode operation is achieved while maintaining decent effective tolerances of d nef f /dw = 0.421e − 3.…”

Section: Cwdm Arrayed Waveguide Gratings (Awg)mentioning

confidence: 59%

Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Cheung

Tan

2020

J. Lightwave Technol.

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We discuss the design and demonstration of 4-channel coarse wavelength-division (de-)multiplexers based on cascaded Mach-Zehnder interferometer (MZI) lattice filters and arrayed waveguide gratings (AWG) on a 150 nm silicon nitride (Si 3 N 4) platform. The 1 × 4 (de-)multiplexers are designed for a channel separation of 25 nm and operate within 990-1065 nm for bottom emitting vertical cavity surface emitting lasers (VCSEL)-based optical links. For Si 3 N 4 Gaussian AWGs, we demonstrate crosstalk <−35 dB at the peak transmission band with insertion loss <0.5 dB. Measurements were performed over many dies, and passband standard deviations for channel 1-4 are 0.49, 0.66, 0.42, and 0.37 nm, respectively. Results for flat-top AWGs indicate crosstalk <−20 dB, with insertion loss <3 dB for the best devices. Flattop cascaded 2 nd order and 3 rd order MZI lattice filters show a minimum of crosstalk <−15 dB and <−20 dB, respectively. The pass-band temperature shift was determined to be 14.5 pm/°C, which is lower than reported values for silicon. The device footprint of the Gaussian and flat-top AWGs are both ∼670 × 200 µm. The device footprint of the flat-top cascaded 2 nd order and 3 rd order lattice filters are 1160 × 470 µm and 1570 × 470 µm, respectively. We believe the Si 3 N 4 platform has potential for its use in CWDM and possibly DWDM transceiver/optical-modules for data/computer communication in high temperature environments up to 80°C. Index Terms-Optical interconnects, photonic integrated circuits, silicon nitride, silicon photonics. I. INTRODUCTION T HERE continues to be an increased demand for high bandwidth density optical interconnects for future mega data centers, long-haul communications, and peta/exa-scale high performance computing (HPC). One study suggests annual global data center IP traffic will reach 20.6 Zettabytes (ZB) by the end of 2021; 94% of those workloads will be processed by cloud data centers and 6% by traditional data centers [1]. In another study, it is estimated by 2020, HPC peak performance will exceed 1 exaflop and require 800 million optical channels with each channel operating at ∼25 Gb/s, 1mW/Gb/s, and at $25/Tb/s [2]. Recently, Hewlett Packard Enterprise announced a new memory centric architecture where CPUs and a universal pool of memory (DRAM, SSD, NVRAM, etc.) are interconnected through a high

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“…Silicon nitride (Si 3 N 4 ) is a mid-index contrast optics (MiDex) material, transparent from the visible (∼0.4 µm) to the mid-IR (4 µm) and has a lower thermo-optic coefficient compared to silicon. These material properties lead to waveguides with lower propagation loss, phase noise, backscattering, and sensitivity to temperature variation, which can be used for high quality and stable passive devices, such as filters [60,61] and optical frequency comb generators [62] among others.…”

Section: Materials Platforms and Cmoscompatible Processesmentioning

confidence: 99%

Scaling capacity of fiber-optic transmission systems via silicon photonics

2020

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The tremendous growth of data traffic has spurred a rapid evolution of optical communications for a higher data transmission capacity. Next-generation fiber-optic communication systems will require dramatically increased complexity that cannot be obtained using discrete components. In this context, silicon photonics is quickly maturing. Capable of manipulating electrons and photons on the same platform, this disruptive technology promises to cram more complexity on a single chip, leading to orders-of-magnitude reduction of integrated photonic systems in size, energy, and cost. This paper provides a system perspective and reviews recent progress in silicon photonics probing all dimensions of light to scale the capacity of fiber-optic networks toward terabits-per-second per optical interface and petabits-per-second per transmission link. Firstly, we overview fundamentals and the evolving trends of silicon photonic fabrication process. Then, we focus on recent progress in silicon coherent optical transceivers. Further scaling the system capacity requires multiplexing techniques in all the dimensions of light: wavelength, polarization, and space, for which we have seen impressive demonstrations of on-chip functionalities such as polarization diversity circuits and wavelength- and space-division multiplexers. Despite these advances, large-scale silicon photonic integrated circuits incorporating a variety of active and passive functionalities still face considerable challenges, many of which will eventually be addressed as the technology continues evolving with the entire ecosystem at a fast pace.

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Polarization-insensitive silicon nitride arrayed waveguide grating

Cited by 26 publications

References 20 publications

Silicon Nanocone Arrays via Pattern Transfer of Mushroomlike SiO₂ Nanopillars for Broadband Antireflective Surfaces

Silicon Nanocone Arrays via Pattern Transfer of Mushroomlike SiO₂ Nanopillars for Broadband Antireflective Surfaces

Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Scaling capacity of fiber-optic transmission systems via silicon photonics

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Polarization-insensitive silicon nitride arrayed waveguide grating

Cited by 26 publications

References 20 publications

Silicon Nanocone Arrays via Pattern Transfer of Mushroomlike SiO2 Nanopillars for Broadband Antireflective Surfaces

Silicon Nanocone Arrays via Pattern Transfer of Mushroomlike SiO2 Nanopillars for Broadband Antireflective Surfaces

Silicon Nitride (Si3N4) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Scaling capacity of fiber-optic transmission systems via silicon photonics

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Product

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Silicon Nanocone Arrays via Pattern Transfer of Mushroomlike SiO₂ Nanopillars for Broadband Antireflective Surfaces

Silicon Nanocone Arrays via Pattern Transfer of Mushroomlike SiO₂ Nanopillars for Broadband Antireflective Surfaces

Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects