Vanadium dioxide (VO2) exhibits a phase-change behavior from the insulating state to the metallic state around 340 K. By using this effect, we experimentally demonstrate a radiative thermal rectifier in the far-field regime with a thin film VO2 deposited on the silicon wafer. A rectification contrast ratio as large as two is accurately obtained by utilizing a one-dimensional steady-state heat flux measurement system. We develop a theoretical model of the thermal rectifier with optical responses of the materials retrieved from the measured mid-infrared reflection spectra, which is cross-checked with experimentally measured heat flux. Furthermore, we tune the operating temperatures by doping the VO2 film with tungsten (W). These results open up prospects in the fields of thermal management and thermal information processing.
Dynamic control of electromagnetic heat transfer without changing mechanical configuration opens possibilities in intelligent thermal management in nanoscale systems. We confirmed by experiment that the radiative heat transfer is dynamically modulated beyond the blackbody limit. The near-field electromagnetic heat exchange mediated by phonon-polariton is controlled by the metal-insulator transition of tungsten-doped vanadium dioxide. The functionalized heat flux is transferred over an area of 1.6 cm across a 370 nm gap, which is maintained by the microfabricated spacers and applied pressure. The uniformity of the gap is validated by optical interferometry, and the measured heat transfer is well modeled as the sum of the radiative and the parasitic conductive components. The presented methodology to form a nanometric gap with functional heat flux paves the way to the smart thermal management in various scenes ranging from highly integrated systems to macroscopic apparatus.
We show that near-field electromagnetic heat transfer between multilayer thermal bodies can be significantly enhanced by the contributions of surface states at multiple surfaces. As a demonstration, we show that when one of the materials forming the multilayer structure is described by the Drude model, and the other one is a vacuum, at the same gap spacing the resulting heat transfer can be up to 40 times higher as compared to that between two semi-infinite materials described by the same Drude model. Moreover, this system can exhibit a nonmonotonic dependency in its heat transfer coefficient as a function of the middle gap spacing. The enhancement effect in the system persists for realistic materials.
Here, we show analytically that the thermal rectification via evanescent waves is obtained in the parallel semi-infinite bodies of the dielectric-coated silicon carbide and uncoated silicon carbide. The permittivity and the thickness of the dielectric coating are derived for maximizing the thermal rectification. In the nonequilibrium situation holding temperatures of 500 K for one body and 300 K for the other, either a coating with a high permittivity of 14 and a thickness of 1 nm or a coating with a low permittivity of 2 and a thickness exceeding 10 nm, results in rectifying coefficients of 0.4 to 0.44. V
Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO2) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO2 film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.
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