Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure

Joma, M.; Horikawa, H.; Xu, Chang Qing; Yamada, Koji; Katoh, Yukio; Kamijoh, T.

doi:10.1063/1.109344

Cited by 57 publications

(11 citation statements)

References 5 publications

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“…The value of tensile strain at which this occurs has important consequences for devices such as polarization-insensitive amplifiers which are designed to operate at this position of degeneracy. 4 The behavior of these transitions has been considered in more detail in our earlier study. 6…”

Section: Comparison Of Theoretical and Experimental Pr Transition mentioning

confidence: 99%

“…2 More recently, there has been a renewed interest in the use of QW systems with tensile strain for both optical modulators 3 and polarization insensitive optical amplifiers. 4 Knowledge of how such a system behaves as a function of strain is essential if its properties are to be fully exploited in devices. For instance, in a range of samples similar to those studied here, Martin et al 5 used magneto-optical studies to investigate the variation in in-plane hole effective mass with strain and to calculate the excitonic binding energies.…”

Section: Introductionmentioning

confidence: 99%

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Modeling and analysis of photomodulated reflectance and double crystal x-ray diffraction measurements of tensilely strained InGaAs/InGaAsP quantum well structures

Rowland

Hosea

1998

Journal of Applied Physics

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Composition and carrier-concentration dependence of the electronic structure of In y Ga 1 − y As 1 − x N x films with nitrogen mole fraction of less than 0.012 Room temperature photomodulated reflectance ͑PR͒ and double crystal x-ray diffraction ͑DCXRD͒ measurements have been performed on a series of tensilely strained In x Ga 1Ϫx As multiple quantum well ͑QW͒ laser structures, with In 0.80 Ga 0.20 As 0.43 P 0.57 barriers, which are lattice-matched to an InP substrate. Seven samples are studied, with nominal QW In composition varying between x ϭ0.533 and 0.316, corresponding to biaxial tensile strains between 0% and 1.5%, respectively. The DCXRD measurements provide accurate information on composition, strain and layer thickness, while the PR yields the energies of both allowed and forbidden critical point interband QW transitions, and how these vary with strain, particularly the transitions between the ground-state conduction band and heavy/light hole valence band levels. A three-band effective mass formalism is used to model the QW transitions and very good agreement with the PR measurements is obtained once excitonic binding energies, and the quantum confined Stark effect are taken into account.

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Section: Comparison Of Theoretical and Experimental Pr Transition mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling and analysis of photomodulated reflectance and double crystal x-ray diffraction measurements of tensilely strained InGaAs/InGaAsP quantum well structures

Rowland

Hosea

1998

Journal of Applied Physics

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“…The subject has been analysed by several groups [1,2,3,4,5,6]. To achieve polarization insensitivity, different approaches have been proposed using combinations of tensile and/or compressive strain in well and/or barrier.…”

Section: Introductionmentioning

confidence: 99%

On the design of polarization‐insensitive semiconductor optical amplifiers

Wartak

Weetman

2002

Micro & Optical Tech Letters

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We have used the 4 × 4 Luttinger–Kohn Hamiltonian to analyse the presence of delta‐strain in quantum well on the polarization properties of semiconductor optical amplifiers. The analysis is performed for a 1.55 μm InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 227–230, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10564

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“…Three type of approaches are proposed to the polarization control; (1) hybrid systems combing two SOAs with different configuration [7], (2) control of mode confinement [8] and (3) control of optical gain for TE and TM modes [9,10]. In the case of the optical gain control, an internal strain in a quantum well (QW) has been controlled [9,10]. In particular, a biaxial tensile strain in a QW enhances contribution of the light-hole states to the optical transitions, which can accomplish a polarization independent bandedge.…”

mentioning

confidence: 99%

Polarization controlled edge emission from columnar InAs/GaAs self‐assembled quantum dots

Jayavel

Wada

Ebe³

et al. 2003

phys. stat. sol. (c)

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Polarization anisotropy of photoluminescence (PL) from the cleaved edge surface of columnar InAs/GaAs self-assembled quantum dots (QDs) has been investigated. The columnar QDs were fabricated by closely stacking the Stranski-Krastanov-mode InAs-island layers. PL peak energy and anisotropy of the PL polarization sensitively depends on the stacking layer number. Whereas the single-island-layer sample shows strong transverse-electric (TE)-mode PL, the PL-intensity ratio of TE-mode PL to transversemagnetic (TM)-mode PL decreases with increasing stacking layer number. The polarization inversion of TE/TM-mode PL-intensity ratio has been accomplished beyond the stacking layer number of 9. The polarization spectra of the columnar QDs with >9 stacking layers indicate that TM-mode becomes dominant near the ground state transition.

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Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure

Cited by 57 publications

References 5 publications

Modeling and analysis of photomodulated reflectance and double crystal x-ray diffraction measurements of tensilely strained InGaAs/InGaAsP quantum well structures

Modeling and analysis of photomodulated reflectance and double crystal x-ray diffraction measurements of tensilely strained InGaAs/InGaAsP quantum well structures

On the design of polarization‐insensitive semiconductor optical amplifiers

Polarization controlled edge emission from columnar InAs/GaAs self‐assembled quantum dots

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