Polarization-Insensitive Phase Modulators Based on an Embedded Silicon-Graphene-Silicon Waveguide

Zou, Xinhai; Zhang, Yujia; Li, Zhihui; Yang, Yiwei; Zhang, Shangjian; Zhang, Zhiyao; Zhang, Yali; Liu, Yong

doi:10.3390/app9030429

Cited by 10 publications

(3 citation statements)

References 35 publications

(46 reference statements)

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“…Accordingly, the MD for TM mode is evaluated to be 20.940 dB, which is very close to that of 20.936 dB for TE mode. As far as we know, this resulted ΔMD of 4 × 10 -3 dB is the smallest and two orders of magnitude lower than the minimum in reported single waveguide polarization-insensitive graphene modulators [39][40][41][42][43][44][45]. Furthermore, in the ON state, the propagation loss is calculated to be 0.985 dB for both modes.…”

Section: μC Responsementioning

confidence: 59%

Polarization-Insensitive Electro-Absorption Modulator Based on Graphene-Silicon Nitride Hybrid Waveguide

Chen

Fan

et al. 2021

IEEE Photonics J.

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Wideband and polarization-insensitive operation are key issues for electro-optic modulators. An electro-absorption modulator based on graphene-silicon nitride hybrid waveguide has been proposed. Geometric parameters are investigated through finite element method to enhance the interaction between the optical mode and the graphene. For a 200-µm -long hybrid waveguide, a modulation depth (MD) of 20 dB can be obtained when Femi level varies from 0.2 to 0.6 eV. The MD difference between the transversal electric polarization and transversal magnetic polarization (ΔMD) can be restrained to 4×10 -3 dB at 1550 nm. A low average ΔMD of 0.2 dB within the wavelength range from 1100 to 1645 nm can be obtained. The 3 dB-bandwidth of 53 GHz and a power consumption is 0.687 pJ/bit can be obtained. The proposed modulator has potentials for on-chip signal processing.

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Section: μC Responsementioning

confidence: 59%

Polarization-Insensitive Electro-Absorption Modulator Based on Graphene-Silicon Nitride Hybrid Waveguide

Chen

Fan

et al. 2021

IEEE Photonics J.

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“…It should be noted that conventional VO 2 modulators are polarization sensitive, so that they only operate for TE or TM polarization. This can lead to a high polarization diversity especially when they are integrated into fiber-based optical systems with random polarization of light. , Such a problem can severely degrade the system performance. , Therefore, the design of a polarization-insensitive modulator is highly desirable to facilitate the integration of modulators with optical systems based on fiber optics.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of a Polarization-Insensitive VO₂/Graphene Optical Modulator Using a 3D Heat Transfer Method

Heidari

Bahadori-Haghighi

2022

ACS Appl. Electron. Mater.

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Phase change materials like vanadium dioxide (VO 2 ) have recently gained particular attention to realize effective optical modulators. In this paper, we propose a high-performance optical modulator based on VO 2 . The structure is constructed by a stack of two graphene sheets spaced by a VO 2 layer that are all grown over a silicon waveguide. The input light propagating along the modulating region of the waveguide can interact with the VO 2 at the top and side of the structure. When an external voltage is applied across the graphene sheets, the VO 2 changes to the metallic phase and the modulator is set at the off state. Most of the previously reported VO 2 -based modulators are polarization sensitive and suffer from high polarization diversity. When such modulators are integrated into a fiber-based optical system containing light with random polarization, the modulation efficiency is profoundly degraded. In our proposed modulator, the structure is optimized to achieve a polarization-insensitive response with an off-state propagation loss of ∼14 dB/μm. The TE (TM) insertion loss is also calculated to be as low as 2.25 dB/μm (3.22 dB/μm), so that an extinction ratio of as high as ∼11.5 dB/μm is obtained. In addition, the required low modulating voltage of 1.12 V and reasonable modulation speed of 390 MHz together with the low energy consumption of 2.1 fJ/bit could make our proposed modulator a good candidate for photonic integrated systems.

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“…The cladding material modulates the part of the mode that overlaps with it. Other platforms such as polymers [31], III-V semiconductors [32,33] and graphene [34][35][36] were also proposed. However, it is always advantageous to stick to the silicon-on-silica platform to keep fabrication simplicity and low cost.…”

Section: Introductionmentioning

confidence: 99%

Design of a 90 GHz SOI Fin Electro-Optic Modulator for High-Speed Applications

et al. 2019

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Introducing high speed networks, such as the fifth generation of mobile technology and related applications including the internet of things, creates a pressing demand for hardware infrastructure that provides sufficient bandwidth. Here, silicon-based microwave-photonics presents a solution that features easy and inexpensive fabrication through a mature platform that has long served the electronics industry. In this work, the design of an electro-optic modulator is proposed where the ‘fin’ structure is adopted from the domain of electronics devices, with emphasis on the high speed of operation. The proposed modulator is customized to provide a bandwidth of 90 GHz with a small phase shifter length of 800 μm and an optical insertion loss of 4 dB. With such a speed, this proposed modulator fits high-speed applications such as modern tele-communications systems.

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Polarization-Insensitive Phase Modulators Based on an Embedded Silicon-Graphene-Silicon Waveguide

Cited by 10 publications

References 35 publications

Polarization-Insensitive Electro-Absorption Modulator Based on Graphene-Silicon Nitride Hybrid Waveguide

Polarization-Insensitive Electro-Absorption Modulator Based on Graphene-Silicon Nitride Hybrid Waveguide

Design and Analysis of a Polarization-Insensitive VO₂/Graphene Optical Modulator Using a 3D Heat Transfer Method

Design of a 90 GHz SOI Fin Electro-Optic Modulator for High-Speed Applications

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Polarization-Insensitive Phase Modulators Based on an Embedded Silicon-Graphene-Silicon Waveguide

Cited by 10 publications

References 35 publications

Polarization-Insensitive Electro-Absorption Modulator Based on Graphene-Silicon Nitride Hybrid Waveguide

Polarization-Insensitive Electro-Absorption Modulator Based on Graphene-Silicon Nitride Hybrid Waveguide

Design and Analysis of a Polarization-Insensitive VO2/Graphene Optical Modulator Using a 3D Heat Transfer Method

Design of a 90 GHz SOI Fin Electro-Optic Modulator for High-Speed Applications

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Design and Analysis of a Polarization-Insensitive VO₂/Graphene Optical Modulator Using a 3D Heat Transfer Method