In this paper, two double-layer graphene optical modulators based on all-dielectric metasurfaces are proposed. The double-layer graphene modulators remove the requirement of doped silicon back gates which would cause excessive loss and limit the modulation speed. The first structure is based on the electromagnetically induced transparency phenomenon, and the second one is a polarization-independent modulator that is based on the Fano resonance. The structures are simulated and analyzed using the finite element method. According to the simulation results, large modulation depth of about 95% at the wavelength of 1.55 μm can be obtained. The required voltages of 4.95 V are obtained for both of the modulators. By assuming the device of 50 × 50 unit cells, the 3 dB bandwidth of the first (second) structure is calculated as 630 MHz (482 MHz). It is estimated that by improving the quality of graphene, the 3 dB bandwidth of more than 2 GHz could be attained. The achieved modulation performances are much better than the previously reported free-space modulators with the same device area. The proposed high-performance optical modulators are promising for free-space optics technology especially free-space optical communication networks.
The reversible insulating-to-conducting phase transition (ICPT) of vanadium dioxide (VO2) makes it a versatile candidate for the implementation of integrated optical devices. In this paper, a bi-functional in-line optical device based on a four-layer stack of PMMA/graphene/VO2/graphene deposited on a side-polished fiber (SPF) is proposed. The structure can be employed as an ultra-compact TE modulator or a TM-pass polarizer, operating at 1.55 μm. We show that the ICPT characteristic can be used for polarization-selective mode shaping (PSMS) to manipulate orthogonal modes separately. On the one hand, as an optical modulator, the PSMS is used to modify mode profiles so that the TE mode attenuation is maximized in the off-state (and IL is minimized in the on-state), while the power carried by the TM mode remains unchanged. As a result, a TE modulator with an ultrahigh extinction ratio (ER) of about ER = 165 dB/mm and a very low insertion loss (IL) of IL = 2.3 dB/mm is achieved. On the other hand, the structure can act as a TM-pass polarizer featuring an extremely high polarization extinction ratio (PER) of about PER = 164 dB/mm and a low TM insertion of IL = 3.86 dB/mm. The three-dimensional heat transfer calculation for the ICPT process reveals that the response time of the modulator is in the order of few nanoseconds. Moreover, the required bias voltage of the proposed device is calculated to be as low as 1.1 V. The presented results are promising a key step towards the realization of an integrated high-performance in-line modulator/polarizer.
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