Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN

Li, Shibin; Ware, Morgan E.; Wu, Jiang; Minor, Paul; Wang, Zhiming; Wu, Zhiming; Jiang, Yadong; Salamo, Gregory J.

doi:10.1063/1.4753993

Cited by 119 publications

(92 citation statements)

References 19 publications

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“…With the rise of nanoscale science and technology, nano meter semiconductor materials, such as GaN [1,2], TiO 2 [3,4], ZnO [5] and so on, have drawn increased attention as their excellent performance observed in many areas. Thanks to the special physical and chemical properties of TiO 2 nanotube arrays, for instance, the larger specific surface area, stability and the electron mobility [6,7], TiO 2 nanotube arrays have been used extensively in different field, including dye-sensitized solar cells (DSSC) [8,9], gas sensor [10,11], photocatalysis [12] and electrochromic devices [13].…”

Section: Introductionmentioning

confidence: 99%

High-quality self-ordered TiO2 nanotubes on fluorine-doped tin oxide glass

Yang

Wei

et al. 2015

J Mater Sci: Mater Electron

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High quality self-ordered TiO 2 nanotubes (TNTs) were grown on a conductive fluorine-doped tin oxide glass by anodization of titanium thin film. The result showed that high density Ti film with good adhesion was obtained by direct current magenetron sputtering at 200°C. The dependence of morphology of TNTs on anodization time was investigated by scanning electron microscope. The crystal structure of TNTs was transformed from amorphous to anatase as a result of the annealing at 500°C for 180 min. The influences of anodization time on the crystallization of nanotubes also were investigated. The proposed low cost method for fabricating TNTs provides an approach to enhance the efficiency of dye-sensitized solar cells.

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Section: Introductionmentioning

confidence: 99%

High-quality self-ordered TiO2 nanotubes on fluorine-doped tin oxide glass

Yang

Wei

et al. 2015

J Mater Sci: Mater Electron

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“…GaN-based materials are of great importance to fabricate visible and ultraviolet light-emitting diodes (LEDs) [1][2][3]. In order to improve the performances of the LEDs, highly conductive p-type GaN and reliable ohmic contacts are required.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN

Hu¹,

Wang²,

Zhang³

2016

Nano Online

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We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N 2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward voltage and higher wall-plug efficiency in comparison with LEDs using pre-activation of p-type GaN. We discussed the mechanism of activation of p-type GaN at 500°C in N 2 ambient. Furthermore, x-ray photoemission spectroscopy examinations were carried out to study the improved electrical performances of the LEDs without pre-activation of p-type GaN.

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“…Furthermore, aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructures form two-dimensional electron gases (2DEGs) suitable for the development of high-performance devices, taking advantage of the spontaneous and piezoelectric polarization of III-nitride compounds [4][5][6]. The quantity of a 2DEG is influenced by the proportion of polarization-induced doping, which directly affects the device characteristics [7][8][9]. Although they have many attractive properties, AlGaN/ GaN high-electron-mobility transistors (HEMTs) have not found universal utility because their electronic characteristics can require complex circuit configurations for digital, power, RF, and microwave circuit applications.…”

Section: Introductionmentioning

confidence: 99%

Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length

Chien

You

et al. 2017

Nanoscale Res Lett

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We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared enhancement-mode (E-mode) GaN HEMTs having widths of up to 300 nm, based on an enhanced surface pinning effect. E-mode GaN HEMTs having MMC structures and widths as well as via-hole-lengths of 100 nm/2 μm and 300 nm/6 μm, respectively, exhibited positive threshold voltages (V th ) of 0.79 and 0.46 V, respectively. The on-resistances of the MMC and via-hole-length structures were lower than those of typical tri-gate nanoribbon GaN HEMTs. In addition, the devices not only achieved the E-mode but also improved the power performance of the GaN HEMTs and effectively mitigated the device thermal effect. We controlled the via-hole-length sidewall surface pinning effect to obtain the E-mode GaN HEMTs. Our findings suggest that via-hole-length normally off GaN HEMTs have great potential for use in next-generation power electronics.

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Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN

Cited by 119 publications

References 19 publications

High-quality self-ordered TiO2 nanotubes on fluorine-doped tin oxide glass

High-quality self-ordered TiO2 nanotubes on fluorine-doped tin oxide glass

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN

Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length

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