Polarization-dependent gain in GaAs/AlGaAs multi-quantum-well lasers: Theory and experiment

Yamada, Minoru; Ogita, S.; Yamagishi, Masayuki; Tabata, Kouichi; Nakaya, N.; Asada, Masahiro; Suematsu, Y.

doi:10.1063/1.95255

Cited by 39 publications

(6 citation statements)

References 9 publications

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“…For example, the ⌬R spectrum of the interdiffused SQW structure annealed at 900°C for 180 s is shown in Fig. 17 The polarization anisotropic characteristics of QW structures have been applied in electroabsorption studies of as-grown 18,19 and vacancy enhanced interdiffused 5 AlGaAs/ GaAs QW waveguides and laser structures for the purposes of polarization sensitive electro-optical devices. In the conventional PR setup, the probe beam is incident on the front surface of the sample at an angle ͑52°for these experiments͒ to the normal, in which case both the H 11 and L 11 components are well resolved with the heavy-hole contribution dominating the spectrum, see Fig.…”

Section: A Thermal Stability Of Structure 02/50mentioning

confidence: 99%

Thermal stability of AlGaAs/GaAs single quantum well structures using photoreflectance

Hughes

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inApplication of phase-sensitive photoreflectance spectroscopy to a study of undoped AlGaAs/GaAs quantum well structures J.The thermal stability of two AlGaAs/GaAs single quantum well structures was investigated using room-temperature photoreflectance. Rapid thermal annealing between 800 and 1000°C for times up to 180 s showed spectral ''blue'' shifts for both the ground state and higher order interband transitions of the quantum well due to Al and Ga interdiffusion across the well/barrier interface resulting in a modification of the quantum well confinement profile. The sensitivity of these transition energies to Al-Ga interdiffusion depended on both the quantum well structure and annealing conditions. The results were correlated with a theoretical model, which was developed previously to determine the effects of interdiffusion on the subband structure of quantum well samples, to give characteristics interdiffusion lengths of less than 20 Å for these annealing conditions. These interdiffusion lengths corresponded to limited interdiffusion and was confirmed from polarization sensitivity measurements where the anisotropic polarization behavior of the quantum well was maintained for these annealing conditions. The analysis of these results agrees well with the model and gives Al/Ga interdiffusion coefficients of ϳ2.9ϫ10 Ϫ17 and ϳ9.2ϫ10 Ϫ17 cm 2 /s at 900 and 1000°C, respectively.

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Section: A Thermal Stability Of Structure 02/50mentioning

confidence: 99%

Thermal stability of AlGaAs/GaAs single quantum well structures using photoreflectance

Hughes

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The factor P C␤ ͑͒ accounts in a phenomenological way for the symmetry breaking resulting from the band coupling outside the ⌫ point. This factor has been given by Yamada et al, 1,11 P CHH ͑ TE͒ϭ 3 4 ͑ 1ϩcos 2 ͒, P CHH ͑ TM͒ϭ 3 2 sin 2 , ͑25͒…”

Section: ͑23͒mentioning

confidence: 99%

Comparison of band-filling and gain models for multiple-quantum-well lasers

Heinämäki

Tulkki

1997

Journal of Applied Physics

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Dependence of optical gain on crystal orientation in wurtzite-GaN strained quantum-well lasersPopulation inversion in optically pumped asymmetric quantum well terahertz lasersThe gain of a separate-confinement heterostructure laser has been studied theoretically by different band-structure and band-state filling models. It is shown that for a shallow quantum-well structure the optical gain is reduced significantly by the noncomplete overlap of the envelope wave functions. The gain is reduced further by occupation of the cladding and barrier states in the laser structure. Comparison with experimental results shows that the Luttinger-Kohn model tends to underestimate the gain. It is suggested that the observed discrepancy is related to enhancement of the confinement by carrier induced space charge, an effect not included in the present calculation.

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“…In spite of its fundamental significance, the polarization of gain in quantum well ͑QW͒ lasers has so far not been analyzed within a multiband model that would include all the strongly coupled valence and conduction bands of III-V compound semiconductors. Accordingly the gain polarization in semiconductor lasers is as a rule analyzed within the lowest order, parabolic-band model of Asada and co-workers [1][2][3][4] or with restricted fourvalence-band 5,6 and six-valence-band k • p models, 7,8 which do not include the important symmetry breaking effect of the conduction band. Gershoni et al 9 have also used the eightband k • p model to calculate the gain in QWs.…”

Section: Introductionmentioning

confidence: 99%

Polarization of gain and symmetry breaking by interband coupling in quantum well lasers

Boxberg¹,

Tereshonkov²,

Tulkki³

2006

Journal of Applied Physics

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We have studied the influence of conduction band-valence band coupling on the polarization of gain in quantum well ͑QW͒ lasers. As a reference we used the eight-band k • p description of the gain polarization. Our eight-band k • p model accounts for the crystal orientation, lack of inversion symmetry, strain induced deformation potentials, and piezoelectricity. We have studied both strained and unstrained ͑001͒ and ͑111͒ QWs. The results are compared with the transition dipole model of the gain polarization ͓M. Asada et al., IEEE J. Quantum Electron. 20, 745 ͑1984͔͒, which is based on a phenomenological generalization of Kane's ͓J. Phys. Chem. Solids 1, 249 ͑1957͔͒ linear k • p model of bulk crystals. We found a quantitative difference between our multiband model and the transition dipole model of Asada et al. The difference is addressed to lack of orthogonality between the transition dipole and the electron wave vectors. The orthogonality is broken outside the ⌫ point by both the QW heterostructure geometry and the interband coupling. Results obtained by the complete eight-band model are also compared with restricted multiband models excluding the conduction band.

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Polarization-dependent gain in GaAs/AlGaAs multi-quantum-well lasers: Theory and experiment

Cited by 39 publications

References 9 publications

Thermal stability of AlGaAs/GaAs single quantum well structures using photoreflectance

Thermal stability of AlGaAs/GaAs single quantum well structures using photoreflectance

Comparison of band-filling and gain models for multiple-quantum-well lasers

Polarization of gain and symmetry breaking by interband coupling in quantum well lasers

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