Polarization and leakage current properties of bismuth sodium titanate ceramic films deposited by aerosol deposition method

Abstract

(Bi 0.5 Na 0.5 )TiO 3 (BNT) dense ceramic films with a thickness of approximately 25 µm were deposited by an aerosol deposition method, and thieir ferroelectric and leakage current properties were investigated. The BNT films annealed at 1100°C represented the leakage current density (J) of 10 ¹6 A/cm 2 , while the BNT films annealed at 800 and 1000°C led to a marked decrease in J. The J of order of 10 ¹7 A/cm 2 was obtained for the films annealed at 1000°C. The ceramic films annealed at 1000°C showed a remanent polarization (P r ) of 27 µC/cm 2 which was larger than that of the ceramic films annealed at 800°C (a P r of 7.4 µC/cm 2 ).

Elaboration of lead-free Na 0.5 Bi 0.5 TiO 3 –BaTiO 3 (NBT-BT) thick films by aerosol deposition method (ADM)

“…This corresponds well to the grain size effect observed for ferroelectric ceramics materials; For example, BaTiO 3 ceramics with grain size lower than around 100 nm are not ferroelectrics, because grain size is too small to allow for the occurrence of ferroelectric ordering and so the structure is no more tetragonal but becomes cubic [39][40][41]. This behavior also corresponds well to previous results obtained by ADM: ferroelectric behavior was only obtained after thermal annealing of the films [13,30,31,[34][35][36].…”

“…For KNN, thick films were successfully obtained on Pt/Sapphire substrates [34]. As for PZT, the ferroelectric properties were obtained only after annealing at 700°C for 1 h. NBT films were deposited on Pt/Ti/Al 2 O 3 and sapphire substrates by the Akedo's group for which ferroelectric properties were again obtained only after annealing at 1000°C for 1 h [35,36].…”

Polarization and leakage current properties of self-supported bismuth sodium titanate ceramic films deposited by aerosol deposition method

“…3(b)] for the obtained films. For the BNT thick films deposited on Pt coated Al 2 O 3 , the 2ª of the peaks were shifted toward high angle with increase the annealing temperature, 27) while there was disrelation between annealing temperatures and 2ª of the peaks for the selfsupported BNT films [ Fig. 3(b)].…”

“…22) Previously, we investigated the polarization and the leakage current properties for the BNT thick films deposited on Pt coated Al 2 O 3 ceramic substrates by the AD method. 27) However, it was difficult to differentiate the influence of the stress from the substrates. In this paper, self-supported BNT thick films were prepared by use of the AD method with heat treatment in order to investigate the influence of the heat treatment on the microstructure, ferroelectric and leakage current properties for the BNT ceramics.…”

Structure and electrical properties of Na0.5Bi0.5TiO3ferroelectric thick films derived from a polymer modified sol-gel method

“…Several methods have been used to prepare NBT thin films, including pulsed laser deposition [6], [7], radio-frequency magnetron sputtering [8], and sol-gel [9]–[12]. However, there are few reports on NBT thick films [13]. The sol-gel process has several advantages over other techniques, such as low cost and low annealing temperature to limit volatilization of compositions.…”