Polarizabilities of shallow donors in silicon

Bethin, J.; Castner, T. G.; Lee, N.K.

doi:10.1016/0038-1098(74)90657-7

Cited by 60 publications

(12 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is important to note that both (1) and (2) are derived for low temperatures ( T -+ 0 K) where all impurity atoms are assumed to be non-ionized. This is also in consistency with the experimental conditions of Bethin et al [14]. The only relationship for ICDSDC which is supposed to be valid at room temperature, up to this authors' knowledge, has been given by Andrews et al [19] as…”

Section: Introductionsupporting

confidence: 89%

“…On the other hand, the intrinsic carrier concentration is given by Values of AE, calculated from (14) are substituted into (16) thus providing the (nie/ni)' ratio. The obtained dependence of the (n,,/n,)' ratio on the impurity concentration is shown in Fig.…”

Section: Impact Of Icdsdc On Band-gap Narrowingmentioning

confidence: 99%

“…7), and N the concentration on non-ionized impurity atoms. Expression (1) has been used in several works to explain the properties of heavily doped silicon [14,171, and also when the material is considered to exhibit a metal-nonmetal transition [ 151.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The effect of impurity concentration dependent static dielectric constant on band-gap narrowing in heavily doped silicon

Ristić

Prijić

Mijalković

1995

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

The influence of the impurity concentration dependent static dielectric constant on the band-gap narrowing in heavily doped silicon at room temperature is considered. By using phosphorus as an example, the existing expression for the static dielectric constant at low temperatures is recast into a form suitable for the application at room temperature. This is done by taking into account the contribution of non-ionized impurities at room temperature to the static dielectric constant behaviour. Applying the proposed expression for the static dielectric constant to the band-gap narrowing calculations, a good agreement with the widely used empirical expression of Del Alamo and Swanson is obtained.

show abstract

Section: Introductionsupporting

confidence: 89%

Section: Impact Of Icdsdc On Band-gap Narrowingmentioning

confidence: 99%

See 1 more Smart Citation

The effect of impurity concentration dependent static dielectric constant on band-gap narrowing in heavily doped silicon

Ristić

Prijić

Mijalković

1995

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

show abstract

“…The latter is the low temperature value measured by Bethin et al (20) for pure silicon. The fit is good over the entire range of r in which the sharp line structure appears.…”

Section: (B) Itzterpretatiotz Of Sharp Line Spectramentioning

confidence: 79%

Sharp line donor–acceptor pair luminescence in silicon

Ziemelis¹,

Parsons²

1981

Can. J. Phys.

View full text Add to dashboard Cite

New sharp line structure observed in the near-band-edge (1030 to 1135 meV) photoluminescenceof Si(P, In) and Si(B, In) at temperatures ranging from 1.6 to 20 K, has been identified as due to radiative recombination of electrons bound to phosphorus donors with holes bound to indium acceptors. This is the first study of sharp line, donor-acceptor pair luminescence in silicon. Straightforward analysis, assuming only Coulomb and van der Waals interactions between otherwise isolated donor and acceptor centres indicates that recombination involving P and In centres separated by distances ranging from 7.7 to 20A is responsible for the observed sharp line structure. This structure is superimposed on the high energy shoulder of the broad band luminescence associated with recombination involving distant (average separation: 55 A) P-In pairs. Transient measurements indicate decay times ranging from 70 to 100ps for the most prominent sharp lines and an overall decay pattern consistent with that expected for donor-acceptor pair recombination.Une nouvelle structure de raies fines observee dans la photoluminescene, au voisinage du bord d e la bande (1030 a 1135 meV), de Si(P, In) et Si(B, In), a des temperatures variant entre I , 6 et 20 K. a ete identifiee comme etant due a la recombinaison radiative d'electrons lies a des atomes d e phosphore donneurs avec des trous lies a des atomes d'indium accepteurs. C'est la premiere etude de luminescence en raies fines d e paires donneur-accepteur dans le silicium. Une analyse directe, supposant seulement des interactions de Coulomb et de van der Waals entre des centres donneurs et accepteurs isoles par ailleurs, indique que la recombinaison impliquant des centres P et In separes par des distances allant de 7.7 a 20A est responsable de la structure de raies fines observee. Cette structure se superpose, du c6te des hautes energies, a I'epaulement de la bande large d e luminescence associee avec la recombinaison impliquant des paires P-In distantes (separation moyenne: 55A). Des mesures d'effets transitoires indiquent que les temps de decroissance varient entre 70 et 100 p s pour les raies fines les plus importantes et que le schema gtneral de decroissance est conforme a c e qu'on peut attendre pour la recombinaison de paires donneur-accepteur.Cnn. J. Phys., 59, 784 (1981) [Traduit par le journal]

show abstract

“…where h is the detector thickness, d is the total vacuum gap width, and κ = 11.47 is the relative permittivity of Si near 0 K [12]. This ignores any fringing fields or effects of the grounded detector housing.…”

Section: Detector Designs and Experimental Setupmentioning

confidence: 99%

Performance of the first 150 mm diameter Cryogenic silicon ionization detectors with contact-free electrodes

Mast¹,

Kennedy²,

Chagani³

et al. 2018

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

Cryogenic semiconductor detectors operated at temperatures below 100 mK are commonly used in particle physics experiments searching for dark matter. The largest such germanium and silicon detectors, with diameters of 100 mm and thickness of 33 mm, are planned for use by the Super Cryogenic Dark Matter Search (SuperCDMS) experiment at SNOLAB, Canada. Still larger individual detectors are being investigated to scale up the sensitive mass of future experiments. We present here the first results of testing two prototype 150 mm diameter silicon ionization detectors. The detectors are 25 mm and 33 mm thick with masses 1.7 and 2.2 times larger than those currently planned for SuperCDMS. These devices were operated with contact-free bias electrodes to minimize leakage currents which currently limit operation at high bias voltages. The results show promise for the use of such technologies in solid state cryogenic detectors.

show abstract

Polarizabilities of shallow donors in silicon

Cited by 60 publications

References 8 publications

The effect of impurity concentration dependent static dielectric constant on band-gap narrowing in heavily doped silicon

The effect of impurity concentration dependent static dielectric constant on band-gap narrowing in heavily doped silicon

Sharp line donor–acceptor pair luminescence in silicon

Performance of the first 150 mm diameter Cryogenic silicon ionization detectors with contact-free electrodes

Contact Info

Product

Resources

About