Sharp line donor–acceptor pair luminescence in silicon

Ziemelis, U.O.; Parsons, R. R.

doi:10.1139/p81-102

Cited by 25 publications

(14 citation statements)

References 15 publications

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“…The last term on the right side of this equation is the correction term, which is sometimes taken into account to better fit the sharp lines with a close D–A range, where a is a tunable parameter. The SLE of the DAP was first observed in GaP, and then it was successively found in zinc selenide, , silicon carbide, silicon, − diamond, and zinc oxide . By combining eq with the previous research on DAP, the theoretical distribution of sharp lines of c-BP can be obtained, which corresponds well to the experimental result, especially on the high-energy side, as shown in Figure S4.…”

Section: Resultssupporting

confidence: 78%

“…In 1974, Vink et al studied the dynamic process of DAP recombination of GaP through time-resolved luminescence spectroscopy and found the phonon replica of sharp lines. 29 The phonon-involved DAP recombination has also been mentioned in the DAP study of silicon, 24 but the authors believed that the sharp emission without the participation of phonons could be more intense in silicon. The DAP radiative recombination should satisfy the conservation of energy and momentum.…”

Section: Resultsmentioning

confidence: 99%

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Ultra-sharp-Line Emission in Isotopic c-¹⁰BP

Zhu

Cheng

et al. 2023

J. Phys. Chem. C

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Cubic boride crystals with pure boron isotopes have attracted great attention in recent years. Here, high-quality cubic boron phosphide single crystals with isotopic 10 B and a maximum width reaching 1.5 mm are grown via the high-temperature molten salt method. An interesting phenomenon that there are many discrete sharp lines in the low-temperature (4−80 K) photoluminescence spectra is observed. Besides, as temperature increases, the luminescence intensity of these sharp lines shows a nonmonotonic decay with two different trends exhibited. Based on analyses, the sharp-line emission originates from phonon-assisted donor−acceptor pair radiative recombination. The nonmonotonic decay is affected by the number of assisting phonons and the degree of thermal ionization under the effect of temperature, and the different decay trends are attributed to the effect of thermal ionization dependent on the distance between the donor and acceptor. Results obtained in this research are expected to enrich the knowledge concerning cubic boride crystals in the aspect of physical properties.

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Section: Resultssupporting

confidence: 78%

Section: Resultsmentioning

confidence: 99%

Ultra-sharp-Line Emission in Isotopic c-¹⁰BP

Zhu

Cheng

et al. 2023

J. Phys. Chem. C

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“…Ziemelis and Parsons have successfully observed and identified the discrete lines for PÀIn pairs with a separation ranging from 0.77 to 2.0 nm (4 m 26). 5 However, they could not resolve discrete lines with the separation larger than 2.0 nm; this was the region that we had to analyze. In our case of P-B pairs the separation corresponding to the observed structure was estimated to range from 1.9 to 3.3 nm (25 m 73), as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…4 Ziemelis et al observed the fine structure due to DA pair luminescence in Si intentionally doped with In, Ga, or Al acceptors. [5][6][7] The ionization energies of these acceptors are larger than the energy of the most conventional B acceptor. The involvement of deep donors and=or acceptors is highly favorable to observe discrete DA pair lines in Si, as discussed later.…”

Section: Introductionmentioning

confidence: 99%

Donor−acceptor pair luminescence in compensated Si for solar cells

Tajima

Iwai

Toyota

et al. 2011

Journal of Applied Physics

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A broad band with a fine structure on the higher energy side has been commonly observed in photoluminescence at 4.2 K from compensated Si for solar cells involving P donors and B acceptors on the order of 10 16 cm À3. We calculated the theoretical spectrum of donorÀacceptor (DA) pair luminescence from the density distribution of pairs as a function of the transition energy of respective pairs with separations ranging from 1.9 to 3.3 nm. A close agreement was obtained between the observed spectral structure and the theoretical curve using the generally accepted P donor and B acceptor ionization energies, where a systematic deviation was explained by the Van der Waals interaction between shallow P donors and B acceptors. This allows us to conclude that the band with the fine structure is due to the P-donorÀB-acceptor pair recombination. This identification was confirmed by the observation of As-donorÀB-acceptor pair luminescence in an As-doped sample. The present findings indicate that P and B impurities with concentrations on the order of 10 16 cm À3 are unlikely to form complexes and that their ionization energies are not changed from those in the low concentration range. V

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“…It follows from this result that same recombination mechanism can be active in CZ and FZ Si but with different parameters of DA pairs. According to [19] the photon energy for DA recombination without taking into consideration Van der Waals force and phonon terms is…”

Section: Introductionmentioning

confidence: 99%

Influence of oxygen on the dislocation related luminescence centers in silicon

Steinman

2005

phys. stat. sol. (c)

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Dislocation related luminescence (DRL) centres in Si have high stability to a thermal treatment of samples and a relatively low temperature quenching. These properties make them an attractive candidate for production of Si based light emitting diodes (LEDs). The low energy part of DRL in the vicinity of the D1 line is the most promising from this point of view due to its highest temperature stability and best coupling to fiber optics. Actually this part of DRL can be divided into several bands. One of them with a position 807 meV is known as D1 line. The substantial effect on D1 luminescence has oxygen. The line becomes broader and several subbands can be identified on the low and high energy side after prolonged annealing of deformed samples. Depending on particular treatment some of these bands could be even more intensive than the original D1 line. The strongest effect is usually observed in oxygen rich CZ crystals. In all cases the presence of dislocations is necessary for the appearance of the low energy bands. Several observations clearly show that the corresponding recombination centres include the dislocation related defect as well as some oxygen complexes. It implies that inclusion and mutual configuration of constituents defines the energy of optical transitions in the region of D1 band. In the present paper a review of previous investigations as well as new results regarding oxygen dislocations interaction are presented.

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Sharp line donor–acceptor pair luminescence in silicon

Cited by 25 publications

References 15 publications

Ultra-sharp-Line Emission in Isotopic c-¹⁰BP

Ultra-sharp-Line Emission in Isotopic c-¹⁰BP

Donor−acceptor pair luminescence in compensated Si for solar cells

Influence of oxygen on the dislocation related luminescence centers in silicon

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Sharp line donor–acceptor pair luminescence in silicon

Cited by 25 publications

References 15 publications

Ultra-sharp-Line Emission in Isotopic c-10BP

Ultra-sharp-Line Emission in Isotopic c-10BP

Donor−acceptor pair luminescence in compensated Si for solar cells

Influence of oxygen on the dislocation related luminescence centers in silicon

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Ultra-sharp-Line Emission in Isotopic c-¹⁰BP

Ultra-sharp-Line Emission in Isotopic c-¹⁰BP