Polarity inversion and growth mechanism of AlN layer grown on nitrided sapphire substrate using Ga–Al liquid‐phase epitaxy

Adachi, Masayoshi; Takasugi, Mari; Sugiyama, Masashi; Iida, Junji; Tanaka, A.; Fukuyama, Hidetoshi

doi:10.1002/pssb.201451426

Cited by 28 publications

(22 citation statements)

References 21 publications

(30 reference statements)

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“…As explained in the introduction, oxygen incorporation on the nitrided sapphire substrate at the initial stage of the LPE growth is necessary for polarity inversion and uniform growth 28) . Taking into account the oxygen incorporation, possible elementary steps of the LPE process are as follows, and the schematic of growth mechanism of the LPE process is shown in Fig.…”

Section: Discussionmentioning

confidence: 99%

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Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

2017

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We developed an original liquid phase epitaxy technique that uses Ga-Al solution to grow AlN on surface nitrided sapphire substrates. In this paper, effects of temperature, solution composition, and N 2 gas ow rate on the growth of AlN layer were investigated. The AlN layer grown in the solution with higher Al content and higher growth temperature tended to dissolve into the solution, thus, the AlN layers exhibited inhomogeneous surface. The growth rate had a maximum at 60 mol%Al and at 1673 K for solution composition dependence and growth temperature dependence, respectively. On the other hand, the growth rate monotonically increased with increasing N 2 gas ow rate. Based on these results, growth mechanism and rate-determined step of this liquid phase epitaxy process were discussed.

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Section: Discussionmentioning

confidence: 99%

“…The full width at half maximum values of X-ray rocking curves for (0002) and (10-12) were 90 and 392 arcsec, respectively 26) . Moreover, we clari ed that the polarity inversion of the AlN layer was caused by oxygen incorporation at the initial stage of the AlN solution growth 27,28) , and oxygen plays an important role for the LPE growth.…”

Section: Introductionmentioning

confidence: 86%

Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

2017

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“…The polarity inversion schematic model associated with oxygen incorporation was developed by Adachi et al 6 There, the polarity inversion starts with the substitution of nitrogen atoms by oxygen atoms at the surface of the nitrided a-plane sapphire layer owing to the higher electron affinity of the oxygen atom than the nitrogen atom. Consequently, some aluminum sites become vacant to balance the electrical neutrality.…”

Section: A Polarity Inversionmentioning

confidence: 99%

“…Polarity inversion of AlN has also been accomplished by varying the oxygen partial pressure in liquid phase epitaxy (LPE) with the Ga-Al flux method. 6 Nakao et al had nitrided the a-plane sapphire at 1973 K for 24 h. 7 Here the γ-AlON was formed between AlN and the a-plane sapphire. In this study, AlN films were sputtered on an a-plane sapphire nitrided substrate using the sapphire nitridation method without the γ-AlON layer formation.…”

Section: Introductionmentioning

confidence: 99%

Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

2018

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ARTICLES YOU MAY BE INTERESTED INThe effect of oxygen partial pressure (P O 2 ) on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC) reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (c)-polarity to aluminum (+c)-polarity occurred during growth at a high P O 2 of 9.4×10 3 Pa owing to Al-O octahedral formation at the interface of nitrided layer and AlN sputtered film which reset the polarity of AlN. The top part of the 1300 nm-thick AlN film sputtered at the high P O 2 was polycrystallized. The crystalline quality was improved owing to the high kinetic energy of Al sputtered atom in the sputtering phenomena. Thinner AlN films were also fabricated at the high P O 2 to eliminate the polycrystallization. For the 200 nm-thick AlN film sputtered at the high P O 2 , the full width at half-maximum values of the AlN (0002) and (1012) X-ray diffraction rocking curves were 47 and 637 arcsec, respectively.

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“…Generally, high quality, defect free, crystal can be grown by a solution growth method because growth occurs at conditions close to thermal equilibrium. Recently, the authors have developed a solution growth method using Ga‐Al solution . In this method, epitaxial AlN layer can be grown on nitrided sapphire substrate at 1573 K under normal pressure of nitrogen atmosphere.…”

Section: Introductionmentioning

confidence: 99%

In‐situ observation of AlN formation from Ni‐Al solution using an electromagnetic levitation technique

et al. 2020

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Aluminum nitride is a promising substrate material for AlGaN-based UV-LED. In order to develop a robust growth processing route for AlN single crystals, fundamental studies of solution growth experiments using Ni-Al alloy melts as a new solution system were performed. Al can be stably kept in solution the Ni-Al liquid even at high temperature; in addition, the driving force of the AlN formation reaction from solution can be controlled by solution composition and temperature. To investigate AlN crystal growth behavior we developed an in situ observation system using an electromagnetic levitation technique. AlN formation behavior, including nucleation and growth, was quantitatively analyzed by an image processing pipeline. The nucleation rate of AlN decreased with increasing growth temperature and decreasing aluminum composition. In addition, hexagonal c-axis oriented AlN crystal successfully grew on the levitated Ni-40 mol%Al droplet reacted at low driving force (1960 K), on the other hand, AlN crystal with dendritic morphology appeared on the sample with higher driving force (Ni-50 mol%Al, 1960 K). Thus, the nucleation rate and crystal morphology were dominated by the driving force of the AlN formation reaction. K E Y W O R D S aluminum nitride, crystal growth, nucleation, thermodynamicsThis is an open access article under the terms of the Creat ive Commo ns Attri bution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. How to cite this article: Adachi M, Hamaya S, Yamagata Y, et al. In-situ observation of AlN formation from Ni-Al solution using an electromagnetic levitation technique. J Am Ceram Soc.

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Polarity inversion and growth mechanism of AlN layer grown on nitrided sapphire substrate using Ga–Al liquid‐phase epitaxy

Cited by 28 publications

References 21 publications

Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

In‐situ observation of AlN formation from Ni‐Al solution using an electromagnetic levitation technique

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