Polarity inversion and coupling of laser beam induced current in As-doped long-wavelength HgCdTe infrared detector pixel arrays: Experiment and simulation

Hu, Weida; Chen, X. S.; Ye, Z. H.; Chen, Y. G.; Yin, Feifei; Zhang, B.; Lü, Wei

doi:10.1063/1.4764903

Cited by 36 publications

(13 citation statements)

References 31 publications

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“…An Oriel tungsten halogen lamp (THL; Oriel 63355) was used as the steady-state bias light source. All HgCdTe samples were grown on GaAs substrates with CdTe buffer layers and an abrupt n + -p structure were formed by the ion implantation of B + in p-type material (Hu et al 2012(Hu et al , 2013. As ZnS films were formed on the surface for passivation, the measured lifetime values were not influenced by the surface treatment.…”

Section: Methodsmentioning

confidence: 99%

Measurement of minority carrier lifetime in infrared photovoltaic detectors using parallel circuit method

Cui

Wang

et al. 2014

Opt Quant Electron

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An experimental method for extracting the minority carrier lifetime of a pnjuntion-type HgCdTe infrared photodetector by transient photovoltage technique is reported. The photovoltaic response of the detector is induced by a picosecond pulsed infrared laser irradiation. A small resistance is paralleled with the photodiode to minimize the influence of the junction RC constant on the photovoltaic response curve. By fitting the exponential decay phase, the time constant has been obtained which is regarded as the minority carrier lifetime of the photodiode. The carrier lifetime extracted from the experiment is in the range of 0.7-110 ns at 77 K. It is found that the minority carrier lifetime shows an increasing trend with in the increased Cd composition and pixel dimension.

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Section: Methodsmentioning

confidence: 99%

Measurement of minority carrier lifetime in infrared photovoltaic detectors using parallel circuit method

Cui

Wang

et al. 2014

Opt Quant Electron

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“…A typical n + -n --on-p junction is built, whose total photosensitive area should be the same with that at 300K. For long-wavelength p-type HgCdTe materials, the mixed conduction effect must be taken into account 11,17,18 , a simple p-on-n inversion junction is formed in long-wavelength HgCdTe induced by B + ion implantation technology, 11,18 whose size of photosensitive area at 300K is almost equal to the ion implantation window. That's why the total photosensitive area is dependent on temperature in long-wavelength HgCdTe.…”

Section: Device Structure and Experimentsmentioning

confidence: 99%

Study of junction performance in mid-wavelength HgCdTe photodiodes by laser beam-induced current microscope

et al. 2014

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This paper reports on the disappearance of photosensitive area extension effect and the novel temperature dependence of junction performance for mid-wavelength HgCdTe detectors. The performances of junction under different temperatures are characterized by laser beam induced current (LBIC) microscope. The physical mechanism of temperature dependence on junction transformation is elaborated and demonstrated using numerical simulations. It is found that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation depended on temperature, and wider band gap compared with the long-wavelength HgCdTe photodiode may correlate with the disappearance of photosensitive area extension effect.1 INTRODUCTION Mercury cadmium telluride (HgCdTe) is widely used in the fabrication of various infrared detectors for military and civil purposes, 1-3 However, the performance of HgCdTe IRFPAs is still easily affected by different defects and complex doping mechanism in the manufacturing process. 4-5 Any nonuniformity specifications often limit the yield of devices in large HgCdTe-based infrared arrays, which results in low yields and high cost. Currently, Laser-beam-induced-current (LBIC) measurements as a high-resolution, nondestructive optical technique have been applied to providing spatially resolved information about electrically active defects and localized nonuniformities in HgCdTe IRFPAs at intermediate processing stage, 6-7 which could significantly promote efficiency and save costs.Some researchers 8 found that there was n-type inversion region extension in different long-wavelength HgCdTe photodiodes formed by B + ion implantation at low temperature (87K) comparing with that at room temperature (300K). In this paper, the temperature dependence of junction performance for mid-wavelength HgCdTe arrays is characterized by the LBIC technique. We find that the photosensitive areas under different operating temperature are approximately the same size, which demonstrated the disappearance of such extension effect. At the same time, the polarity inversion of

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“…Recently, laser beam induced current (LBIC) imaging has been used in characterization of HgCdTe PN junction. [6]- [9] LBIC imaging can provide spatially resolved information about electrically active defects and localized non-uniformities in HgCdTe materials and devices used for infrared photovoltaic arrays [9]- [11]. In this paper, a novel junction profile measurement method for planar PN junction in HgCdTe epilayer is proposed and demonstrated.…”

Section: Introductionmentioning

confidence: 98%

Mercury cadmium telluride implanted junction profile measurement and depth control

Zhou

Lin

et al. 2014

SPIE Proceedings

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In this work, a novel junction profile measurement method is proposed. A serial of junctions were fabricated by B+ implantation. Then a beveled bar which was about 10mm long and several micrometers deep was formed by carefully controlled wet-etching. The remaining depth of n region changes from the full depth that is about 5.3mm after ion implantation to zero depending on its lateral position and the slope of the etching bar. Voltage-current and Laser Beam Induced Current (LBIC) measurements were applied to determine the HgCdTe junction edge. The LBIC signal orrectification characteristic indicates the existence of a PN junction. The junction depth is extracted from the position where the PN junction disappears and the slope of the etching bar. The junction depth of intrinsic doped HgCdTe was measured, which is about 2.4μm. A significant 0.4mm thick N-region was observed. Moreover, junction depths of samples annealed for different time were also investigated. By this method, it's possible to measure the three dimensional profile of a planar PN junction.Key words： HgCdTe, infrared focal plane arrays (IRFPAs), junction profile, laser beam induced current (LBIC)

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Polarity inversion and coupling of laser beam induced current in As-doped long-wavelength HgCdTe infrared detector pixel arrays: Experiment and simulation

Cited by 36 publications

References 31 publications

Measurement of minority carrier lifetime in infrared photovoltaic detectors using parallel circuit method

Measurement of minority carrier lifetime in infrared photovoltaic detectors using parallel circuit method

Study of junction performance in mid-wavelength HgCdTe photodiodes by laser beam-induced current microscope

Mercury cadmium telluride implanted junction profile measurement and depth control

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