Polarity independent resistive switching in MoS₂ nanosheets and PEO-based nanocomposite films

Abstract

Here, we report the exfoliation of bulk MoS2 (molybdenum disulfide) into few-layer nanosheets and then prepared nanocomposite films with poly(ethylene oxide) (MoS2-PEO). We observed nonpolar or polarity independent bistable resistive switching memory in two-terminal devices with indium tin oxide (ITO) and aluminum (Al) as bottom and top electrodes, respectively. In both bipolar and unipolar operation, it is observed that the biasing direction controls the current conduction mechanism. When positive bias is applied at the top Al electrode, the low resistance state (LRS) conduction is ohmic type. But in opposite biasing condition, LRS conduction is space charge controlled. The current-voltage characteristics of the bipolar and unipolar switching are distinctly different in terms of their RESET process. In bipolar, the RESET process is very sharp whereas in unipolar operation it is staggered and step-wise.

Contrasting analog and digital resistive switching memory characteristics in solution-processed copper(i) thiocyanate and its polymer electrolyte-based memristive devices

“…, IαV m where m > 2. 9,46–48 Thus, in the HRS, the current conduction is ohmic initially and then followed by Schottky emission and trap assisted-SCLC. After the SET process, when sweeping back to zero from 0.8 V, the slope is 1.02 for the entire biasing region, indicating the ohmic type conduction again in the LRS.…”