Contrasting analog and digital resistive switching memory characteristics in solution-processed copper(<scp>i</scp>) thiocyanate and its polymer electrolyte-based memristive devices

Deb, Rajesh; Nair, Manjula G.; Das, Ujjal; Mohapatra, Swagat K.

doi:10.1039/d3tc00090g

Cited by 3 publications

(1 citation statement)

References 61 publications

(90 reference statements)

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“…The barrier height of the Cu/V 2 O 5 interface is calculated by using the Richardson–Schottky equation, which is discussed in the Supporting Information. Figure (c) shows that the Schottky barrier falls with repeated positive voltage scans and increases with subsequent repeating negative voltage scans . The electron is unable to leapfrog the potential barrier height established between the Cu and V 2 O 5 interfaces, indicating that the device is in the HRS state.…”

Section: Results and Discussionmentioning

confidence: 99%

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V₂O₅ Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Kaushlendra,

Kaur

2024

ACS Appl. Electron. Mater.

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Bioinspired neuromorphic computing (NC) is attracting significant research interest due to the imitation of the human brain functioning in electronic devices. The current study describes a flexible Cu/V 2 O 5 /NiMnIn-based memory device fabricated using the direct current (DC) magnetron sputtering technique on a flexible Ni substrate. It manifests the simultaneous existence of analog and abrupt switching characteristics, making it promising for neuromorphic applications. The switching behavior is explained through the proposed analytical model. In abrupt resistive switching, the device displays reasonably high OFF/ ON resistance ratio (∼4.1 × 10 3 ), endurance (∼5000 cycles), and data retention time (∼4500 s). The tunability of the device has been investigated by studying the influence of external stimuli, such as temperature and magnetic field anisotropy, on the SET voltage. The realization of long-term potentiation (LTP) and long-term depression (LTD) synaptic functions in analog switching demonstrates the nonlinear and asymmetric features of the device. The effect of temperature on the LTP, LTD, and memory window has been thoroughly investigated. The strain generated in the NiMnIn layer during the first-order martensite transformation aids in tuning the LTP and LTD of the device. The negative and positive piezomagnetic coefficients of Ni and NiMnIn lead to magnetization-graded ferromagnetic assembly and enhance the linearity of LTP and LTD. Additionally, the memory device exhibits outstanding flexibility. The current work opens up new possibilities for upcoming neuromorphic applications.

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Section: Results and Discussionmentioning

confidence: 99%

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V₂O₅ Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Kaushlendra,

Kaur

2024

ACS Appl. Electron. Mater.

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Conversion between digital and analog resistive switching behaviors and logic display application of photoresponsive ZnO nanorods-based memristor

Rao,

Sun,

Zhou

et al. 2024

Materials Today Communications

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Analog resistive switching behavior in BiCoO3 thin film

Kumari,

Jindal,

Munjal

et al. 2024

Solid-State Electronics

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Contrasting analog and digital resistive switching memory characteristics in solution-processed copper(i) thiocyanate and its polymer electrolyte-based memristive devices

Abstract: Usually, resistive switching (RS) devices show digital RS memory (sharp SET and RESET process), which is most suitable for digital data storage applications. Some RS devices also manifest ideal memristive...

Cited by 3 publications

References 61 publications

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V₂O₅ Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V₂O₅ Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Conversion between digital and analog resistive switching behaviors and logic display application of photoresponsive ZnO nanorods-based memristor

Analog resistive switching behavior in BiCoO3 thin film

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Contrasting analog and digital resistive switching memory characteristics in solution-processed copper(i) thiocyanate and its polymer electrolyte-based memristive devices

Abstract: Usually, resistive switching (RS) devices show digital RS memory (sharp SET and RESET process), which is most suitable for digital data storage applications. Some RS devices also manifest ideal memristive...

Cited by 3 publications

References 61 publications

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V2O5 Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V2O5 Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Conversion between digital and analog resistive switching behaviors and logic display application of photoresponsive ZnO nanorods-based memristor

Analog resistive switching behavior in BiCoO3 thin film

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Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V₂O₅ Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V₂O₅ Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing