Polarity driven morphology of zinc oxide nanostructures

Käbisch, Sven; Gluba, Marc A.; Klimm, C.; Krause, Stefan; Koch, Norbert; Nickel, N. H.

doi:10.1063/1.4820410

Cited by 12 publications

(15 citation statements)

References 19 publications

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“…An impact of the Al concentration on the NW growth was also observed by Käbisch et al [ 26 ]. They attributed this behavior to a change of the surface polarity from an O-terminated surface of the undoped ZnO layer to a Zn-terminated one of the doped layers.…”

Section: Resultssupporting

confidence: 66%

Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn x Al1−x O and Zn x Ga1−x O Seed Layers

et al. 2017

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ZnO nanowires (NWs) are used as building blocks for a wide range of different devices, e.g. light emitters, resonators, and sensors. Integration of the NWs into such structures requires a high level of NWs’ diameter control. Here, we present that the doping concentration of ZnxAl1−xO and ZnxGa1−xO seed layers has a strong impact on the NW growth and allows to tune the diameter of the NWs by two orders of magnitude down to less than 7 nm. These ultrathin NWs exhibit a well-oriented vertical growth and thus are promising for the investigation of quantum effects. The doping of the ZnO seed layers has also an impact on the deposition temperature which can be reduced down to T≈400∘C. This temperature is much smaller than those typically used for the fabrication of NWs by pulsed laser deposition. A comparison of the NWs indicates a stronger impact of the Ga doping on the NW growth than for the Al doping which we attribute to an impact of the size of the dopants. The optical properties of the NWs were investigated by cathodoluminescence spectroscopy which revealed a high crystalline quality. For the thin nanowires, the emission characteristic is mainly determined by the properties of the surface near region.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-017-1906-2) contains supplementary material, which is available to authorized users.

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Section: Resultssupporting

confidence: 66%

Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn x Al1−x O and Zn x Ga1−x O Seed Layers

et al. 2017

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“…4b). Those binding energies correspond to Zn 2+ oxidation state in ZnO wurzite lattice [49][50][51][52][53]. In Fig.…”

Section: Tablementioning

confidence: 94%

“…In Table S2 results from peak fitting of the O 1s signal are presented. Three main peaks at 532.6 (O III ), 531.4 (O II ) and 530 (O I ) eV were found and are related to loosely bound oxygen (OH − ), oxygen defects in ZnO and AleO bonds, and oxygen in the wurtzite lattice, respectively [50][51][52][53]. O 1s peak position for AleO bond in pure alumina appears very near to that of oxygen defects of ZnO as it was not possible to resolve.…”

Section: Tablementioning

confidence: 99%

Role of aluminum and HMTA in the hydrothermal synthesis of two-dimensional n-doped ZnO nanosheets

et al. 2019

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This work reports the study of the processes behind the growth of two-dimensional (2D) n-doped ZnO nanostructures on an AlN layer. We have demonstrated that AlN undergoes a slow dissociation process due to the basic controlled environment promoted by the hexamethylenetetramine (HMTA). The Al(OH) 4ions created inhibits the growth along the c-axis, effectively promoting the fast formation of a planar geometry selectively grown on top of the AlN layer. With the use of this promoting layer and a standard hydrothermal method, a selective area growth is observed with micrometric resolution. In addition, by using several advanced characterization techniques such as, X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS/EDX), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL), we observed a resulting doping with aluminum of the ZnO nanostructures, occupying substitutional and interstitial sites, that could lead to new promising applications. These high-quality n-doped ZnO nanosheets (NSs) exhibit strong ultraviolet emission in the 385-405 nm region without broad deep level emission. The piezoelectric nature of these nanostructures has been demonstrated by using piezoresponse atomic force microscope (PFM) and with the support of a piezoelectric test device. Therefore, this low-cost and fast selective-area synthesis of 2D n-doped ZnO NSs can be applicable to other aluminum based materials and paves the way to new promising applications, such as bioelectronic applications, energy generation or self-powered sensing.

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“…Overall, the issue of polarity in the field of ZnO nanostructures have been reported depending on the polarity of the ZnO nucleation surface ,,,,− and investigated regarding their polarity itself. The physical and chemical vapor deposition techniques typically results in the formation of Zn-polar ZnO NRs ,,,− or nanostructures following the catalyst-free or self-induced approaches, , regardless of the polarity of the nucleation surface.…”

Section: Introductionmentioning

confidence: 99%

Polarity-Dependent Growth Rates of Selective Area Grown ZnO Nanorods by Chemical Bath Deposition

et al. 2017

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Polarity is known to affect the growth and properties of ZnO single crystals and epitaxial films, but its effects are mostly unknown in ZnO nanorods. To leave polarity as the only varying parameter, ZnO nanorods are grown by chemical bath deposition under identical conditions and during the same run on O- and Zn-polar ZnO single crystals patterned by electron beam lithography with the same pattern consisting of 15 different domains. The resulting well-ordered O- and Zn-polar ZnO nanorod arrays with high structural uniformity are formed on all the domains. The comparison of their typical dimensions unambiguously reveals that Zn-polar ZnO nanorods have much higher growth rates than O-polar ZnO nanorods for all the hole diameter and period combinations. The distinct growth rates are explained in the framework of the surface reaction-/diffusive transport-limited elongation regime analysis, which yields a much larger surface reaction rate constant for Zn-polar ZnO nanorods. The origin of the difference is attributed to polarity-dependent dangling bond configurations at the top polar c-faces of ZnO nanorods, which may further be affected by polarity-dependent interactions with the ionic species in aqueous solution. These findings show the relevance of considering polarity as an important quantity in ZnO nanorods.

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Polarity driven morphology of zinc oxide nanostructures

Cited by 12 publications

References 19 publications

Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn x Al1−x O and Zn x Ga1−x O Seed Layers

Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn x Al1−x O and Zn x Ga1−x O Seed Layers

Role of aluminum and HMTA in the hydrothermal synthesis of two-dimensional n-doped ZnO nanosheets

Polarity-Dependent Growth Rates of Selective Area Grown ZnO Nanorods by Chemical Bath Deposition

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