Polarity dependence of AlN {0 0 0 1} decomposition in flowing H2

Kumagai, Yoshinao; Akiyama, Kensuke; Togashi, Rie; Murakami, Hisashi; Takeuchi, Misaichi; Kinoshita, Toru; Takada, Kazuya; Aoyagi, Yoshinobu; Koukitu, Akinori

doi:10.1016/j.jcrysgro.2007.04.005

Cited by 68 publications

(65 citation statements)

References 31 publications

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“…The activation energy of the top and In-richest layer is not surprisingly the lowest, as it decomposed more rapidly and with an onset at the lower temperature. With more Al, the layers become increasingly stable, and the activation energy of AlN has been shown to be 5.4 eV (in vacuum) and 4.14 eV while flowing H 2 across the surface [28]. As the layers are more InN like the activation energy is reduced.…”

Section: Resultsmentioning

confidence: 99%

Thermal stability of Al1−xInxN (0001) throughout the compositional range as investigated during in situ thermal annealing in a scanning transmission electron microscope

et al. 2013

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Section: Resultsmentioning

confidence: 99%

Thermal stability of Al1−xInxN (0001) throughout the compositional range as investigated during in situ thermal annealing in a scanning transmission electron microscope

et al. 2013

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“…From these results, it can be assumed that the desorption process of N proceeds as follows: (1) The surface with three NH 2 and one NH 3 (3NH 2 +NH 3 structure) is formed and (2) NH 3 on this surface desorbs from 3NH 2 +NH 3 surface. Table 1 shows the desorption energy for AlH and NH 3 obtained by this study, the previous calculation [3] and the previous experiment [1]. The experimental value was obtained for the decomposition in the high-temperature region and expected the desorption energy for AlH x (x=0-3).…”

Section: Contributedmentioning

confidence: 57%

“…Since it is considered that hydrogen plays a role in surface reaction processes at these growth conditions, understanding its role may be important for controlling the crystalline quality of AlN. In our group, the decomposition rate and activation energy of AlN decomposition were investigated under hydrogen and helium atmosphere [1]. It was found that decomposition of AlN occurred over 1200 °C in H 2 flow, while it was not observed in He flow even at 1400 °C.…”

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confidence: 99%

Theoretical investigation of the decomposition mechanism of AlN(0001) surface under a hydrogen atmosphere

Suzuki

Panyukova

Togashi

et al. 2010

Phys. Status Solidi (c)

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The activation energies for Al and N desorption from an AlN surface were calculated using the density functional theory (DFT) to obtain a detailed understanding of the decomposition process of AlN(0001) Al and N surfaces under a hydrogen atmosphere. It was found that Al atoms on the AlN(0001) Al surface desorbed as AlH and formed AlH3 by reacting with two H atoms on the surface just after desorption, whereas N atoms on the AlN(0001) N surface desorbed as NH3 molecules from the surface. The desorption energy of Al on the hydrogen terminated surface was more consistent with previous experimental value than that on an ideal surface. This result suggests that the initial surface structure of the AlN(0001) surface is terminated with hydrogen. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Al-polar AlN was competitively dominant at 1000 ºC or higher temperature. It is expected that stability of AlN is not so different between N-polarity and Al-polarity at around 1000 ºC [6], and expected that each polarity of AlN can exist at that temperature. Therefore, the difference of growth rate between N-polarity and Al-polarity could lead to drastic polarity alteration.…”

Section: Resultsmentioning

confidence: 99%

Polarity control and preparation of AlN nano‐islands by hydride vapor phase epitaxy

Nagashima

Hironaka

Ishizuki

et al. 2009

Phys. Status Solidi (c)

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Initial growth condition of AlN on sapphire substrate by HVPE was investigated. It was found that polarity of AlN was significantly affected by temperature even under the condition of AlCl3 pre‐flow and that polarity was drastically changed from N‐polarity to Al‐polarity with increasing temperature around 1000 °C. Polarity of AlN was easily controlled by growth temperature. By utilizing these findings and etching technique by alkaline solution, AlN nano‐islands were successfully obtained on sapphire substrates. AlN nano‐islands had mixture of trapezoid and column structure with 100 nm or less in diameter. Also it had epitaxial relation to sapphire substrates. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Polarity dependence of AlN {0 0 0 1} decomposition in flowing H2

Cited by 68 publications

References 31 publications

Thermal stability of Al1−xInxN (0001) throughout the compositional range as investigated during in situ thermal annealing in a scanning transmission electron microscope

Thermal stability of Al1−xInxN (0001) throughout the compositional range as investigated during in situ thermal annealing in a scanning transmission electron microscope

Theoretical investigation of the decomposition mechanism of AlN(0001) surface under a hydrogen atmosphere

Polarity control and preparation of AlN nano‐islands by hydride vapor phase epitaxy

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