Polarity and growth directions in Sn-seeded GaSb nanowires

Zamani, Reza; Ghalamestani, Sepideh Gorji; Niu, Jie; Sköld, Niklas; Dick, Kimberly A.

doi:10.1039/c6nr09477e

Cited by 25 publications

(49 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Here we just mention that the liquid droplet catalyzing the VLS growth of any NWs should wet the growth front but not the NW sidewalls. 26,28,36 In general, (111)A facets are rarely seen as the growth front in a nanowire. One reason could be that their surface energy would be higher than for (111)B and hence their formation would be energetically and geometrically suppressed in favor of the (111)B facets.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

et al. 2018

View full text Add to dashboard Cite

Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds. Nanowires grow mostly along the (111) direction for energetic reasons. Arsenide and phosphide nanowires grow along (111)B, implying a group V termination of the (111) bilayers. Polarity engineering provides an additional pathway to modulate the structural and optical properties of semiconductor nanowires. In this work, we demonstrate for the first time the growth of Ga-assisted GaAs nanowires with (111)A-polarity, with a yield of up to ∼50%. This goal is achieved by employing highly Ga-rich conditions which enable proper engineering of the energies of A and B-polar surfaces. We also show that A-polarity growth suppresses the stacking disorder along the growth axis. This results in improved optical properties, including the formation of AlGaAs quantum dots with two orders or magnitude higher brightness. Overall, this work provides new grounds for the engineering of nanowire growth directions, crystal quality and optical functionality.

show abstract

Section: Resultsmentioning

confidence: 99%

“…Another recent study showed similar results on Sn-seeded GaSb NWs. 28 In this case, the A-polar NWs were defect-free, in contrast to the B-polar NWs which had spaced stacking defects appearing in the <111>A direction. The presence of these defects resulted in zigzag-shaped sidewalls in B-polar NWs.…”

Section: Introductionmentioning

confidence: 88%

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

et al. 2018

View full text Add to dashboard Cite

show abstract

“…For example, Au has been considered as a universal catalyst for the growth of 1D nanostructures [55,99,100]. However, once Au is doped into Si NWs, it forms fatal defects quickly and deteriorates electrical properties of Si NWs, making it incompatible with CMOS technique [101,102]. On the other hand, Pd, a CMOS-compatible metal [103,104], readily forms palladium silicide (Pd 2 Si) when it is doped into the Si NW, which is a compound commonly employed as an electrical contact of Si devices.…”

Section: The Fundamental Properties and Growth Mechanism Of Sb-based mentioning

confidence: 99%

Recent advances in Sb-based III–V nanowires

et al. 2019

View full text Add to dashboard Cite

Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sbbased III-V nanowires (NWs) attracted significant interests in high speed electronics, longwavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effecttransistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.

show abstract

“…This three-fold symmetry can be related to the surface polarity (polarity is the internal electric field of the crystal caused by the asymmetry in the charge distribution of a cation-anion bond in tetrahedrally coordinated compound semiconductors such as III-V and II-VI. 32 The terminating element at the surface determines the surface polarity). The GaAs stem forms side facets from the {112} family which are semi-polar planes: three of them are A-polar while the other three are B-polar.…”

Section: Takedownmentioning

confidence: 99%

Atomic-Resolution Spectrum Imaging of Semiconductor Nanowires

et al. 2017

Self Cite

View full text Add to dashboard Cite

Over the past decade, III-V heterostructure nanowires have attracted a surge of attention for their application in novel semiconductor devices such as tunneling field-effect transistors (TFETs). The functionality of such devices critically depends on the specific atomic arrangement at the semiconductor heterointerfaces. However, most of the currently available characterization techniques lack sufficient spatial resolution to provide local information on the atomic structure and composition of these interfaces. Atomic-resolution spectrum imaging by means of electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) is a powerful technique with the potential to resolve structure and chemical composition with sub-angstrom spatial resolution and to provide localized information about the physical properties of the material at the atomic scale. Here, we demonstrate the use of atomic-resolution EELS to understand the interface atomic arrangement in three-dimensional heterostructures in semiconductor nanowires. We observed that the radial interfaces of GaSb-InAs heterostructure nanowires are atomically abrupt, while the axial interface in contrast consists of an interfacial region where intermixing of the two compounds occurs over an extended spatial region. The local atomic configuration affects the band alignment at the interface and, hence, the charge transport properties of devices such as GaSb-InAs nanowire TFETs. STEM-EELS thus represents a very promising technique for understanding nanowire physical properties, such as differing electrical behavior across the radial and axial heterointerfaces of GaSb-InAs nanowires for TFET applications.

show abstract

Polarity and growth directions in Sn-seeded GaSb nanowires

Cited by 25 publications

References 48 publications

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

Recent advances in Sb-based III–V nanowires

Atomic-Resolution Spectrum Imaging of Semiconductor Nanowires

Contact Info

Product

Resources

About