Polarisation Insensitive Coherent Receiver PIC for 100Gbaud Communication

Runge, Patrick; Zhou, Gan; Ganzer, Felix; Seifert, Sten; Mutschall, Sven; Seeger, A.

doi:10.1364/ofc.2016.tu2d.5

Cited by 12 publications

(2 citation statements)

References 6 publications

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“…The capacity of network systems that require state-of-the-art pin photodiodes (pin-PDs) is now approaching 800 Gbit/s, which uses a baud rate of 100 Gbaud. Studies on such high-speed pin-PDs for 100-Gbaud operation were conducted but used a waveguide structure [17,18]. Our approach is developing such high-speed pin-PDs with a vertical illumination structure [19].…”

Section: Inverted P-down Pin Photodiodes (Pin-pds)mentioning

confidence: 99%

Inverted p-down Design for High-Speed Photodetectors

et al. 2021

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We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.

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Section: Inverted P-down Pin Photodiodes (Pin-pds)mentioning

confidence: 99%

Inverted p-down Design for High-Speed Photodetectors

et al. 2021

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“…Additionally, the integration in a waveguide platform opens the possibility to expand the functionality by integrating other building blocks like multimode interference couplers (MMI), which are suitable for coherent detection schemes [6]. Consequently, the integration of high sensitivity and low noise APDs in an InP waveguide platform enables new applications wide beyond dataand telecommunications [7].…”

Section: Introductionmentioning

confidence: 99%

Linearity Characteristics of Avalanche Photodiodes For InP Based PICs

Beckerwerth

Behrends

Ganzer

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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We demonstrate InP PICs with avalanche photodiodes (APD) consisting of InP and InAlAs multiplication regions and investigate these devices regarding their DC and RF linearity characteristics. The optical input dependent gain, bandwidth and output power are characterized and compared to electric field simulations. The space-charge induced electric field reduction is considered to determine the measured properties of the APDs. The APDs with an InAlAs multiplication region exhibit a high bandwidth of 27 GHz in combination with high sensitivity for optical input powers low as 34 µW at a responsivity of 0.65 A/W and a dynamic range of 34 dB. Although the APD with an InP multiplication region shows lower bandwidths of maximum 6 GHz, it demonstrates a high sensitivity for input powers low as 26 µW at a responsivity of 0.85 A/W and a dynamic range of 30 dB making it very attractive for sensing applications. Further, the bias and optical input dependent electric field help to conclude the linearity limitations of the presented devices.

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