Polarisation dependence of Schottky barrier heights at ferroelectric BaTiO<sub>3</sub> / RuO<sub>2</sub>interfaces: influence of substrate orientation and quality

Hubmann, Andreas H.; Li, Shunyi; Zhukov, Sergey; Seggern, Heinz von; Klein, Andreas

doi:10.1088/0022-3727/49/29/295304

Cited by 25 publications

(23 citation statements)

References 58 publications

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“…The Fermi level position at the SrTiO 3 :Nb/RuO 2 interface is rather independent on deposition conditions with E F − E VB =1.85±0.1 eV (see Figure ). This value is at the lower limit of Fermi levels observed at any SrTiO 3 surfaces or interfaces, and in line with high barriers formed by RuO 2 on a number of other n ‐type semiconducting oxides . Due to the rather high work function of RuO 2 of 6−6.5 eV, a low Fermi level position at the interface is expected.…”

Section: Discussionsupporting

confidence: 76%

“…This is within the range of effective screening lengths provided by Stengel et al. It is also in reasonable agreement with barrier modifications observed during polarization reversal at BaTiO 3 /RuO 2 interfaces . The observed change in binding energy and appearance of Ti 3+ after degradation is therefore also consistent with scenario B.…”

Section: Discussionmentioning

confidence: 93%

“…Here, the same basic method is utilized to investigate the substrate and electrode core levels as well as the resulting band offset at the interface. While XPS has been used as an optimized tool to monitor changes as a function of external parameters like oxygen partial pressure or bias voltage, this work follows the evolution of the Schottky barrier height in dependence on the degradation state of Fe‐doped SrTiO 3 . The measurements require an electrode thickness of ≲4 nm.…”

Section: Introductionmentioning

confidence: 99%

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Modification of the Schottky barrier height at the RuO₂ cathode during resistance degradation of Fe‐doped SrTiO₃

et al. 2017

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The long-term stability of electronic devices at high temperatures and electric fields might be strongly influenced by the electronic properties of interfaces. A modification of Schottky barrier heights at electrode interfaces of functional oxides upon changes of the external oxygen partial pressure is well documented in literature. In this work, an experimental approach using X-ray photoelectron spectroscopy is presented, which enables to study transient changes in the Schottky barrier height induced by electrical degradation. A rise of the Fermi level at the RuO 2 cathode interface of Fe-doped SrTiO 3 single crystals by 0.6 eV is observed in the course of resistance degradation. The change of the effective barrier height is associated to the migration of oxygen vacancies towards the cathode and accompanied by the observed reduction of Ti. Different scenarios are discussed to explain the origin of barrier modification and the localization of the reduced Ti.

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Section: Discussionsupporting

confidence: 76%

Section: Discussionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

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Modification of the Schottky barrier height at the RuO₂ cathode during resistance degradation of Fe‐doped SrTiO₃

et al. 2017

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“…Besides, different contributions can also modify the measured ferroelectric properties in a extrinsic manner. [19][20] Probably, the most well-known extrinsic contributions that can modify the measured ferroelectric properties are the leakage currents, 19,[21][22][23] the interfaces between the metal and the ferroelectric, [24][25][26][27][28] and parasitic capacitance of the measuring circuit (of relevance when characterizing nanosized capacitors by using proximity probes). [29][30][31][32] Figure 1.…”

Section: Introductionmentioning

confidence: 99%

Direct Reversible Magnetoelectric Coupling in a Ferroelectric/Ferromagnetic Structure Controlled by Series Resistance Engineering

González-Casal

Fina

Sánchez

et al. 2019

ACS Appl. Electron. Mater.

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Achieving large magnetoelectric coupling is of interest for memory and communication applications. In multiferroic hybrid structures (combining ferroelectric and magnetic materials) in presence of a magnetoelectric coupling, the ferroelectric properties can be modulated by a magnetic field. This is called direct magnetoelectric effect. Measuring the ferroelectric properties in multiferroic materials most commonly requires using metallic electrodes that sandwich the ferroelectric material. In the present work, we use the series resistance introduced by the metallic electrode (La2/3Sr1/3MnO3) to manipulate one relevant ferroelectric parameter, i.e. the coercive voltage, of an adjacent ferroelectric layer (BaTiO3) by a magnetic field. We will show that the variations are fully reversible and more apparent at high frequencies. Being the high frequency regime the frequency range where most of the envisaged multiferroic devices would work, our results are particularly interesting for applications, in addition of being of relevance from the methodological point of view.

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“…The bent-band structure of pn junctions has been observed by transmission electron microscopy 14 ; however, the actual occurrence of FEBS remains unproven experimentally. One of the crucial problems that need to be further clarified is the fact that the actual location of the FEBS is not known [15][16][17] . Therefore achieving the fundamental understanding for the energy shift of atomic orbitals in terms of their depth profile is an important basis for understanding the electronic structure in ferroelectrics.…”

mentioning

confidence: 99%

Skewed electronic band structure induced by electric polarization in ferroelectric BaTiO3

Oshime

Kano

Ikenaga

et al. 2020

Sci Rep

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Skewed band structures have been empirically described in ferroelectric materials to explain the functioning of recently developed ferroelectric tunneling junction (ftJs). nonvolatile ferroelectric random access memory (FeRAM) and the artificial neural network device based on the FTJ system are rapidly developing. However, because the actual ferroelectric band structure has not been elucidated, precise designing of devices has to be advanced through appropriate heuristics. Here, we perform angle-resolved hard X-ray photoemission spectroscopy of ferroelectric Batio 3 thin films for the direct observation of ferroelectric band skewing structure as the depth profiles of atomic orbitals. The depthresolved electronic band structure consists of three depth regions: a potential slope along the electric polarization in the core, the surface and interface exhibiting slight changes. We also demonstrate that the direction of the energy shift is controlled by the polarization reversal. in the ferroelectric skewed band structure, we found that the difference in energy shifts of the atomic orbitals is correlated with the atomic configuration of the soft phonon mode reflecting the Born effective charges. These findings lead to a better understanding of the origin of electric polarization.

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Polarisation dependence of Schottky barrier heights at ferroelectric BaTiO₃ / RuO₂interfaces: influence of substrate orientation and quality

Cited by 25 publications

References 58 publications

Modification of the Schottky barrier height at the RuO₂ cathode during resistance degradation of Fe‐doped SrTiO₃

Modification of the Schottky barrier height at the RuO₂ cathode during resistance degradation of Fe‐doped SrTiO₃

Direct Reversible Magnetoelectric Coupling in a Ferroelectric/Ferromagnetic Structure Controlled by Series Resistance Engineering

Skewed electronic band structure induced by electric polarization in ferroelectric BaTiO3

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Polarisation dependence of Schottky barrier heights at ferroelectric BaTiO3 / RuO2interfaces: influence of substrate orientation and quality

Cited by 25 publications

References 58 publications

Modification of the Schottky barrier height at the RuO2 cathode during resistance degradation of Fe‐doped SrTiO3

Modification of the Schottky barrier height at the RuO2 cathode during resistance degradation of Fe‐doped SrTiO3

Direct Reversible Magnetoelectric Coupling in a Ferroelectric/Ferromagnetic Structure Controlled by Series Resistance Engineering

Skewed electronic band structure induced by electric polarization in ferroelectric BaTiO3

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Product

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Polarisation dependence of Schottky barrier heights at ferroelectric BaTiO₃ / RuO₂interfaces: influence of substrate orientation and quality

Modification of the Schottky barrier height at the RuO₂ cathode during resistance degradation of Fe‐doped SrTiO₃

Modification of the Schottky barrier height at the RuO₂ cathode during resistance degradation of Fe‐doped SrTiO₃