2021
DOI: 10.1002/adma.202107206
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Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS

Abstract: 2D materials have been attracting high interest in recent years due to their low structural symmetry, excellent photoresponse, and high air stability. However, most 2D materials can only respond to specific light, which limits the development of wide‐spectrum photodetectors. Proper bandgap and the regulation of Fermi level are the foundations for realizing electronic multichannel transition, which is an effective method to achieve a wide spectral response. Herein, a noble 2D material, palladium phosphide sulfi… Show more

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Cited by 42 publications
(33 citation statements)
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References 72 publications
(47 reference statements)
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“…[47] This issue can be solved by means of transferring electrode and optimizing device structure, [48,49] which will not be studied in this work. The responsivity (R) was calculated to evaluate the photodetection performance at different wavelengths according to the following equation [50] :…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…[47] This issue can be solved by means of transferring electrode and optimizing device structure, [48,49] which will not be studied in this work. The responsivity (R) was calculated to evaluate the photodetection performance at different wavelengths according to the following equation [50] :…”
Section: Resultsmentioning
confidence: 99%
“…[23] At a low power density of 0.16 mW cm -2 , a high responsivity of ≈8.5 A W -1 was obtained (Figure 4f). Furthermore, the detectivity (D*) was calculated by combing the R and dark current (I dark ) through the following equation: [50] /2 dark D R A eI = *…”
Section: Resultsmentioning
confidence: 99%
“…With innovations in detection and sensing science, multidimensional optical detection technology has come into being. The polarimetric imaging sensor can extend the detection of photoelectric signal from light wavelength and intensity to a light polarization vector, which exhibits application potentials in remote sensing image, environmental monitoring, agriculture, and medical detection. Recently, near-infrared polarization photodetectors (780–2526 nm) based on low-symmetry 2D/1D materials have become a research hotspot because the near-infrared light is not affected by smoke or clouds in the atmosphere. To date, some narrow-bandgap 2D/1D materials have been explored as near-infrared polarization photodetectors successfully because of the anisotropic photoresponse ascribed to the low-symmetry crystal structure, such as black phosphorus (b-P), As–P, PdPS, NbS 3 , GeSe, GaAs, Te, Sb 2 S 3 , ZnTe, etc. In particular, III–V semiconductor nanowires (NWs) that are appropriate for contemporary silicon technology also have polarized photoresponse properties resulting from their anisotropic 1D geometry structure. , They display an anisotropic photoresponse for linear polarization light as long as the energy of the incident light is larger than that of the NW bandgap. ,, However, there are few reports about near-infrared polarization photodetectors based on narrow-bandgap III–V NWs.…”
mentioning
confidence: 99%
“…For the cost-effective practical applications, it is more appealing to employ 2D intrinsic semiconductors rather than the band gap opening in graphene. That is why, many 2D semiconductors have been fabricated up to now, such as: single-triazine-based g-C 3 N 4 [20], transition metal dichalcogenides family [21][22][23], phosphorene [24,25], indium selenide [26], MoSi 2 N 4 family [27], polyaniline C 3 N [28], graphene-like BC 2 N [29], nickel diazenide NiN 2 [30], niobium oxide diiodide NbOI 2 [31], and most recently penta-PdPS [32] and PdPSe [33] nanosheets.…”
Section: Introductionmentioning
confidence: 99%