Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology

Kam, Kevin A.; Tengan, Brianne I. C.; Hayashi, Cody K.; Ordonez, Richard C.; Garmire, David

doi:10.3390/s18092774

Cited by 9 publications

(4 citation statements)

References 27 publications

(44 reference statements)

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“…The extracted hole and electron mobilities measured for the GFET devices are shown in Table 1 and are comparable to several reported devices with similar methods [14,28,29,30,31,32]. It is important to note the hole and electron mobilities increase as the channel length decreases and may be due, in part, to the lower probability of defects within the graphene channel at shorter channel lengths.…”

Section: Resultssupporting

confidence: 82%

Spray-On Liquid-Metal Electrodes for Graphene Field-Effect Transistors

et al. 2019

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Advancements in flexible circuit interconnects are critical for widespread adoption of flexible electronics. Non-toxic liquid-metals offer a viable solution for flexible electrodes due to deformability and low bulk resistivity. However, fabrication processes utilizing liquid-metals suffer from high complexity, low throughput, and significant production cost. Our team utilized an inexpensive spray-on stencil technique to deposit liquid-metal Galinstan electrodes in top-gated graphene field-effect transistors (GFETs). The electrode stencils were patterned using an automated vinyl cutter and positioned directly onto chemical vapor deposition (CVD) graphene transferred to polyethylene terephthalate (PET) substrates. Our spray-on method exhibited a throughput of 28 transistors in under five minutes on the same graphene sample, with a 96% yield for all devices down to a channel length of 50 μm. The fabricated transistors possess hole and electron mobilities of 663.5 cm2/(V·s) and 689.9 cm2/(V·s), respectively, and support a simple and effective method of developing high-yield flexible electronics.

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Section: Resultssupporting

confidence: 82%

Spray-On Liquid-Metal Electrodes for Graphene Field-Effect Transistors

et al. 2019

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“…When used in flexible devices, they can easily conform to any surface geometry and become self-healing under strain. Another key advantage of liquids over solid dielectrics is the nature of the electrical characteristics, which is independent of their physical thickness [29]. Despite the advantages, implementing liquid dielectrics in practical applications still has to overcome challenges related to instability due to the liquid nature, sensitivity to humidity and measurements at cryogenic temperature [30].…”

Section: Introductionmentioning

confidence: 99%

Improving the optoelectronic properties of monolayer MoS₂ field effect transistor through dielectric engineering

Vrinda Narayanan,

Majumder,

Gokul

et al. 2023

Nanotechnology

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The reduced dielectric screening in atomically thin two-dimensional materials makes them very sensitive to the surrounding environment, which can be modulated to tune their optoelectronic properties. In this study, we significantly improved the optoelectronic properties of monolayer MoS2 by varying the surrounding environment using different liquid dielectrics, each with a specific dielectric constant ranging from 1.89 to 18. Liquid mediums offer the possibility of environment tunability on the same device. For a back-gated field effect transistor, the field effect mobility exhibited more than two-order enhancement when exposed to a high dielectric constant medium. Further investigation into the effect of the dielectric environment on the optoelectronic properties demonstrated a variation in photoresponse relaxation time with the dielectric medium. The rise and decay times were observed to increase and decrease, respectively, with an increase in the dielectric constant of the medium. These results can be attributed to the dielectric screening provided by the surrounding medium, which strongly modifies the charged impurity scattering, the band gap, and defect levels of monolayer MoS2. These findings have important implications for the design of biological and chemical sensors, particularly those operating in a liquid environment. By leveraging the tunability of the dielectric medium, we can optimize the performance of such sensors and enhance their detection capabilities.

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“…Furthermore, the liquid nature of EDL dielectrics provides a conformal structure that can be easily integrated into wearable and flexible electronics [2]. Different liquid dielectrics can be rapidly integrated and tested with graphene to optimize targeted performance characteristics [15].…”

Section: Introductionmentioning

confidence: 99%

High on-off ratio graphene switch via electrical double layer gating

et al. 2020

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This paper discusses the production and investigation of novel graphene switches by gating through an electrical double layer (EDL). Controlled voltage biases across a liquid dielectric and graphene induce electrochemical reactions within the dielectric and produce high electric fields in an EDL at the surface of graphene. As the electrochemical reactions occur within the dielectric, the EDL strength separates the electrochemically-produced ions based on their polarity, and provides the necessary molecular activation and deactivation energies to form weak, reversible molecular bonds between the produced ions and graphene. The reversible bonds between the ions and graphene are used to dynamically alter the electronic transport through graphene, which introduces an exciting assortment of device possibilities. Whereas traditional graphene devices are unuseful for electronic switches or digital logic due to an insufficient bandgap of graphene, the presented graphene electrochemical field-effect transistors (GEC-FETs) exhibit ON-OFF ratios larger than 10 4 with OFF-resistances as high as 10 M. Channel current, gate voltage, and dielectric medium are varied and compared to show their effect on device performance. The presented device and associated techniques show potential for integration in graphene digital-logic architectures.

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Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology

Cited by 9 publications

References 27 publications

Spray-On Liquid-Metal Electrodes for Graphene Field-Effect Transistors

Spray-On Liquid-Metal Electrodes for Graphene Field-Effect Transistors

Improving the optoelectronic properties of monolayer MoS₂ field effect transistor through dielectric engineering

High on-off ratio graphene switch via electrical double layer gating

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Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology

Cited by 9 publications

References 27 publications

Spray-On Liquid-Metal Electrodes for Graphene Field-Effect Transistors

Spray-On Liquid-Metal Electrodes for Graphene Field-Effect Transistors

Improving the optoelectronic properties of monolayer MoS2 field effect transistor through dielectric engineering

High on-off ratio graphene switch via electrical double layer gating

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Product

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Improving the optoelectronic properties of monolayer MoS₂ field effect transistor through dielectric engineering