Historically, graphene-based transistor fabrication has been time-consuming due to the high demand for carefully controlled Raman spectroscopy, physical vapor deposition, and lift-off processes. For the first time in a three-terminal graphene field-effect transistor embodiment, we introduce a rapid fabrication technique that implements non-toxic eutectic liquid-metal Galinstan interconnects and an electrolytic gate dielectric comprised of honey. The goal is to minimize cost and turnaround time between fabrication runs; thereby, allowing researchers to focus on the characterization of graphene phenomena that drives innovation rather than a lengthy device fabrication process that hinders it. We demonstrate characteristic Dirac peaks for a single-gate graphene field-effect transistor embodiment that exhibits hole and electron mobilities of 213 ± 15 and 166 ± 5 cm 2/V·s respectively. We discuss how our methods can be used for the rapid determination of graphene quality and can complement Raman Spectroscopy techniques. Lastly, we explore a PN junction embodiment which further validates that our fabrication techniques can rapidly adapt to alternative device architectures and greatly broaden the research applicability.
Advancements in flexible circuit interconnects are critical for widespread adoption of flexible electronics. Non-toxic liquid-metals offer a viable solution for flexible electrodes due to deformability and low bulk resistivity. However, fabrication processes utilizing liquid-metals suffer from high complexity, low throughput, and significant production cost. Our team utilized an inexpensive spray-on stencil technique to deposit liquid-metal Galinstan electrodes in top-gated graphene field-effect transistors (GFETs). The electrode stencils were patterned using an automated vinyl cutter and positioned directly onto chemical vapor deposition (CVD) graphene transferred to polyethylene terephthalate (PET) substrates. Our spray-on method exhibited a throughput of 28 transistors in under five minutes on the same graphene sample, with a 96% yield for all devices down to a channel length of 50 μm. The fabricated transistors possess hole and electron mobilities of 663.5 cm2/(V·s) and 689.9 cm2/(V·s), respectively, and support a simple and effective method of developing high-yield flexible electronics.
Physical-layer key generation methods utilize the variations of the communication channel to achieve a secure key agreement between two parties with no prior security association. Their secrecy rate (bit generation rate) depends heavily on the randomness of the channel, which may reduce significantly in a stable environment. Existing methods seek to improve the secrecy rate by injecting artificial noise into the channel. Unfortunately, noise injection cannot alter the underlying channel state, which depends on the multipath environment between the transmitter and receiver. Consequently, these methods are known to leak key bits toward multi-antenna eavesdroppers, which is capable of filtering the noise through the differential of multiple signal receptions. This work demonstrates an improved approach to reinforce physical-layer key generation schemes, e.g., channel randomization. The channel randomization approach leverages a reconfigurable antenna to rapidly change the channel state during transmission, and an angle-of-departure (AoD) based channel estimation algorithm to cancel the changing effects for the intended receiver. The combined result is a communication channel stable in the eyes of the intended receiver but randomly changing from the viewpoint of the eavesdropper. We augmented an existing physical-layer key generation protocol, iJam, with the proposed approach and developed a full-fledged remote instrumentation platform to demonstrate its performance. Our evaluations show that augmentation does not affect the bit error rate (BER) of the intended receiver during key establishment but reduces the eavesdropper's BER to the level of random guessing, regardless of the number of antennas it equips. CCS CONCEPTS • Security and privacy → Key management; Mobile and wireless security.
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