Point Defects, Diffusion, and Precipitation

Abstract

The sections in this article are Introduction Native (Intrinsic) Point Defects Under Thermal Equilibrium Conditions Native (Intrinsic) Point Defects Under Nonequilibrium Conditions Phenomenological Description of Diffusion Processes Atomistic Diffusion Mechanisms Diffusion Without Involvement of Native Point Defects Simple Vacancy Exchange and Interstitialcy Mechanisms Interstitial‐Substitutional Mechanisms Uncharged Species Charged Species Recombination‐Enhanced Diffusion Diffusion in Silicon General Remarks Silicon Self‐Diffusion Interstitial‐Substitutional Diffusion: Au , Pt and Zn in Si Dopant Diffusion Fermi Level Effect Influence of Surface Reactions Dopant‐Diffusion‐Induced Nonequilibrium Effects Recombination‐Enhanced Diffusion Diffusion of Carbon and Other Group IV Elements Diffusion of Si Self‐Interstitials and Vacancies Oxygen and Hydrogen Diffusion Diffusion in Germanium Diffusion in Gallium Arsenide General Remarks Gallium Self‐Diffusion and Superlattice Disordering Intrinsic Gallium Arsenide Doped Gallium Arsenide Arsenic Self‐Diffusion and Superlattice Disordering Impurity Diffusion in Gallium Arsenide Silicon Diffusion Interstitial–Substitutional Species Comparison to Diffusion in Other III – V Compounds Agglomeration and Precipitation Agglomerates of Native Point Defects in Silicon Void and Gallium Precipitate Formation During Zinc Diffusion into Ga As Precipitation with Volume Changes in Silicon