Point Defects

and, Anthony Kelly; Knowles, Kevin M.

doi:10.1002/9781119961468.ch10

Cited by 1 publication

(1 citation statement)

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“…The most commonly observed planar (2D) defects in cubic semiconductors by using high-resolution TEM are twin boundaries (TBs) and stacking faults (SFs) [31]. They are caused by discontinuities in the ...AaBbCcAaBbCc... stacking sequence of {111}-type close-packed layers in diamond or, its ordered variant, zincblende structure.…”

Section: Configuration Of Planar Defectsmentioning

confidence: 99%

Structural defects in cubic semiconductors characterized by aberration-corrected scanning transmission electron microscopy

et al. 2017

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The development of new electro-optical devices and the realization of novel types of transistors require a profound understanding of the structural characteristics of new semiconductor heterostructures. This article provides a concise review about structural defects which occur in semiconductor heterostructures on the basis of micro-patterned Si substrates. In particular, one- and two-dimensional crystal defects are being discussed which are due to the plastic relaxation of epitaxial strain caused by the misfit of crystal lattices. Besides a few selected examples from literature, we treat in particular crystal defects occurring in GaAs/Si, Ge/Si and β-SiC/Si structures which are studied by high-resolution annular dark-field scanning transmission electron microscopy. The relevance of this article is twofold; firstly, it should provide a collection of data which are of help for the identification and characterization of defects in cubic semiconductors by means of atomic-resolution imaging, and secondly, the experimental data shall provide a basis for advancing the understanding of device characteristics with the aid of theoretical modelling by considering the defective nature of strained semiconductor heterostructures.

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Section: Configuration Of Planar Defectsmentioning

confidence: 99%