Pneumatically sprayed Cu2ZnSnS4films under Ar and Ar–H2atmosphere

Rodriguez, Moises Espindola; Sylla, Diouldé; Sánchez, Yudania; López-Mariño, Simón; Fontané, Xavier; López-García, J.; Placidi, Marcel; Pérez-Rodrı́guez, A.; Vigil‐Galán, O.; Saucedo, Edgardo

doi:10.1088/0022-3727/47/24/245101

Cited by 17 publications

(5 citation statements)

References 28 publications

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“…Suryawansi et al prepared CZTS by SILAR method and obtained PCE of about 3.81% [7]. The reported experimental studies have shown that the PCE of CZTS film varies considerably by preparation methods such as RF sputtering [8], electron beam evaporation [9], thermal evaporation [10], spray pyrolysis [11], spin coating [12], pulsed laser deposition [13], electrodeposition process [14] and SILAR method [15]. The main drawback of these methods is that they require sulfurization for CZTS film formation, in which either N 2 or H 2 S atmosphere is required for annealing [7].…”

Section: Introductionmentioning

confidence: 99%

Electrical and optical properties of CZTS thin films prepared by SILAR method

Henry

Mohanraj

Sivakumar

2016

Journal of Asian Ceramic Societies

133

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a b s t r a c tIn the present work, Cu 2 ZnSnS 4 (CZTS) thin film was deposited onto the glass substrate by simple and economic SILAR method and its structural, morphological, optical and electrical properties were analyzed Q2 . X-ray diffraction (XRD) analysis confirms the formation of CZTS with kesterite structure and the average crystallite size is found to be 142 nm. Scanning electron microscope (SEM) image shows that the film has homogeneous, agglomerated surface without any cracks. The prepared CZTS film shows good optical absorption (10 4 cm −1 ) in the visible region and the optical band gap energy is found to be quite close to the optimum value of about 1.54 eV for solar cell application. The refractive index of the prepared film is found to be 2.85. The electrical resistivity of the film is found to be ∼10 −2 cm at room temperature.

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Section: Introductionmentioning

confidence: 99%

Electrical and optical properties of CZTS thin films prepared by SILAR method

Henry

Mohanraj

Sivakumar

2016

Journal of Asian Ceramic Societies

133

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“…This trend correlates well to the fact that surface compositions (XPS results) are Cu‐depleted and Sn‐rich, and demonstrate that the composition of the precursor solutions does not necessarily translate into the same bulk composition. Sulfur contents below the stoichiometric value (50%) are characteristic of as‐sprayed CZTS films . Tin is another element that tends to volatilize easily.…”

Section: Resultsmentioning

confidence: 92%

Cross‐Section Analysis of the Composition of Sprayed Cu₂ZnSnS₄ Thin Films by XPS, EDS, and Multi‐Wavelength Raman Spectroscopy

Valdes

Pascual-Winter

Bruchhausen

et al. 2018

Physica Status Solidi (a)

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A detailed cross‐section analysis of the chemical composition of sprayed Cu2ZnSnS4 thin films is presented. X‐ray diffraction (XRD), energy dispersive spectroscopy (EDS), X‐ray photoelectron spectroscopy (XPS), and Raman spectroscopy (with near‐IR, visible, and UV‐lasers) are used to demonstrate that while CZTS effectively forms within the bulk of the film, there is some degree of element segregation, formation of undesirable secondary phases, and the presence of a disordered kesterite structure across the film. Different penetration depths of the excitation signals correspond to the many different surface sensitive techniques employed in this work. XPS results reveal that the surface of Cu4ZnSnS4 (CZTS) films presents a high concentration of tin and zinc and a low sulfur concentration, while being highly depleted in copper. EDS, XRD, and infrared Raman spectroscopy confirm that the composition of as‐sprayed and sulfurized films is close to stoichiometric Cu2ZnSnS4. Resonant UV‐Raman spectroscopy helps to identify secondary phases located at the external surface of sprayed and sulfurized CZTS films (mainly ZnS, ZnO), while VIS‐Raman spectroscopy helps to identify a disordered kesterite structure close to the surface. Secondary phases need to be chemically etched when aiming at incorporating kesterite films obtained by spray pyrolysis into photovoltaic devices.

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“…Oxidizing gases, such as O 2 , should be avoided, as they can react with the precursor metals in the pyrolysis phase, Thin Films leading to the formation of unwanted oxides. In this sense, inert gases such as N 2 or Ar are the most suitable for depositing chalcogenides by spray-pyrolysis [41].…”

Section: Spray-coating: a Low-cost Technique For Chalcogenide Solar Cellsmentioning

confidence: 99%

Solution-Processed Chalcogenide Photovoltaic Thin Films

Andrade¹,

Santos²,

Araujo³

et al. 2021

Thin Films

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Chalcogenides-based thin film solar cells are great competitors to beat high efficiencies as silicone solar cells. The chalcogenides that have been commonly used as absorber materials are CIS, CIGS, and CZTS. They present some advantages of having a direct and tunable band gap, high absorption coefficient and respectable efficiency to cost ratio. Solution processable deposition approaches for the fabrication of solar cells attracts a great deal attention due to its lower capital cost of the manufacturing than the vacuum-based techniques. In this chapter, we detail the use of a low-cost method of deposition for the chalcogenide thin films by spin-coating and spray-coating, which is already widely employed in several fields of industries.

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Pneumatically sprayed Cu₂ZnSnS₄films under Ar and Ar–H₂atmosphere

Cited by 17 publications

References 28 publications

Electrical and optical properties of CZTS thin films prepared by SILAR method

Electrical and optical properties of CZTS thin films prepared by SILAR method

Cross‐Section Analysis of the Composition of Sprayed Cu₂ZnSnS₄ Thin Films by XPS, EDS, and Multi‐Wavelength Raman Spectroscopy

Solution-Processed Chalcogenide Photovoltaic Thin Films

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Pneumatically sprayed Cu2ZnSnS4films under Ar and Ar–H2atmosphere

Cited by 17 publications

References 28 publications

Electrical and optical properties of CZTS thin films prepared by SILAR method

Electrical and optical properties of CZTS thin films prepared by SILAR method

Cross‐Section Analysis of the Composition of Sprayed Cu2ZnSnS4 Thin Films by XPS, EDS, and Multi‐Wavelength Raman Spectroscopy

Solution-Processed Chalcogenide Photovoltaic Thin Films

Contact Info

Product

Resources

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Pneumatically sprayed Cu₂ZnSnS₄films under Ar and Ar–H₂atmosphere

Cross‐Section Analysis of the Composition of Sprayed Cu₂ZnSnS₄ Thin Films by XPS, EDS, and Multi‐Wavelength Raman Spectroscopy