PMMA-Etching-Free Transfer of Wafer-scale Chemical Vapor Deposition Two-dimensional Atomic Crystal by a Water Soluble Polyvinyl Alcohol Polymer Method

Ngoc, Huynh Van; Qian, Yongteng; Han, Suk Kil; Kang, Dae Joon

doi:10.1038/srep33096

Cited by 91 publications

(82 citation statements)

References 32 publications

(63 reference statements)

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“…Typical transfer of graphene -grown by CVD on Cu or Ni substrates -onto a substrate of choice, involves some intermediate stages [1][2][3][4][5][6][7][8][9]. The graphene-deposited metal substrate is coated with a polymer, e.g., poly(methyl methacryslate) (PMMA) [1], or polydimethylsiloxane (PDMS) [2] in order to protect it through the following transfer stages.…”

Section: Introductionmentioning

confidence: 99%

Transfer of Graphene with Protective Oxide Layers

et al. 2018

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Transfer of graphene, grown by Chemical Vapor Deposition (CVD), to a substrate of choice, typically involves deposition of a polymeric layer (typically, poly(methyl methacrylate, PMMA or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. Here we study a transfer of graphene with a protective thin oxide layer. The thin oxide layer is grown by Atomic Deposition Layer (ALD) on the graphene right after the growth stage on Cu foils. One can further aid the oxide-graphene transfer by depositing a very thin polymer layer on top of the composite (much thinner than the usual thickness) following by a more aggressive polymeric removal methods, thus leaving the graphene intact. We report on the nucleation growth process of alumina and hafnia films on the graphene, their resulting strain and on their optical transmission. We suggest that hafnia is a better oxide to coat the graphene than alumina in terms of uniformity and defects.

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Section: Introductionmentioning

confidence: 99%

Transfer of Graphene with Protective Oxide Layers

et al. 2018

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“…Conventionally, the most popular polymer for graphene transfer has been poly(methyl methacrylate) (PMMA). 2,[6][7][8][9][10] This is because PMMA is a long chained polymer and provides a robust support for graphene transfer. Although there are some issues with PMMA residues, the PMMA support layer is reasonably easy to remove with organic solvents, e.g., by acetone.…”

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confidence: 99%

Transfer and patterning of chemical vapor deposited graphene by a multifunctional polymer film

Kaplas

Bera

Matikainen

et al. 2018

Applied Physics Letters

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Graphene is seeking pathways towards applications, but there are still plenty of unresolved problems on the way. Many of those obstacles are related to synthesis and processing of graphene. Chemical vapor deposition (CVD) of graphene is currently one of the most promising techniques that enable scalable synthesis of high quality graphene on a copper substrate. From the transient metal substrate, the CVD graphene film is transferred to the desired dielectric substrate. Most often, the transfer process is done by using a supporting poly(methyl methacrylate) (PMMA) film, which is also a widely used electron beam resist. Conventionally, after graphene is transferred to the substrate, the supporting PMMA film is removed by organic solvents. Hence, the potential of using the same PMMA layer as a resist mask remains unexplored. Since PMMA is an electron beam resist, the same polymer film can be useful both for transferring and for patterning of graphene. In this work, we demonstrate simultaneous transfer and patterning of graphene by using the same PMMA film. With our demonstrated method, we are able to receive sub-micron resolution very easily. The graphene transfer and its subsequent patterning with the same resist layer may help developing device applications based on graphene and other 2D materials in the near future.

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“…PMMA residue will cause numbers of trapping site on the surface of MoS 2 and result in degradation of MoS 2 TFTs. 13 In this work, the band diagram of graphene/MoS 2 heterostructure is determined using ultraviolet photoelectron spectroscopy (UPS), and followed by direct comparison of their the electrical characteristics. Finally, to further improve the performance of MoS 2 TFT, a new method to fabricate MoS 2 TFT using graphene contact first and MoS 2 layer last process, which can avoid PMMA residue and a Tel.…”

mentioning

confidence: 99%

“…2(d). Because the device performance of MoS 2 TFTs will be influenced by many different factors, 13,19 so these two kinds of contact are fabricated on same MoS 2 flake. In this way, we can ensure these two TFTs have nearly the same thicknesses of MoS 2 and undergoing same process flow.…”

mentioning

confidence: 99%

High performance MoS2 TFT using graphene contact first process

et al. 2017

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An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS). Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT) is made. Different from metal contacts, the work function of graphene can be modulated. As a result, the subthreshold swing can be improved. And when Vg<VFB, the intrinsic graphene changes into p-type, so graphene contact can achieve lower off current by lowering the Fermi level. To further improve the performance of MoS2 TFT, a new method using graphene contact first and MoS2 layer last process that can avoid PMMA residue and high processing temperature is applied. MoS2 TFT using this method shows on/off current ratio up to 6×106 order of magnitude, high mobility of 116 cm2/V-sec, and subthreshold swing of only 0.515 V/dec.

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PMMA-Etching-Free Transfer of Wafer-scale Chemical Vapor Deposition Two-dimensional Atomic Crystal by a Water Soluble Polyvinyl Alcohol Polymer Method

Cited by 91 publications

References 32 publications

Transfer of Graphene with Protective Oxide Layers

Transfer of Graphene with Protective Oxide Layers

Transfer and patterning of chemical vapor deposited graphene by a multifunctional polymer film

High performance MoS2 TFT using graphene contact first process

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