Plasmonically enhanced emission from a group-III nitride nanowire emitter

Abstract

The plasmonic response from a nanotextured silver coating was utilized to enhance the transfer of ultraviolet light generated in a group-III nitride nanowire emitter. A two-step approach was developed in a metal–organic chemical vapour deposition system to grow nanowires initially vertically by the vapour–liquid–solid mechanism and, subsequently, laterally by increasing the growth temperature and the group-V/III reactant ratio. This controllably produced a 20 nm GaN:Si core with a 200 nm outer-diameter AlGaN:Mg sheath structure. Solvothermal chemistry based on an ethylene glycol solvent was employed to deposit a silver coating that approximated a dense packing of metallic nanospheres. Nanoscale emission and plasmonically enhanced transfer of this energy were simulated to aid the development and understanding of this system.

Group-III Nitride P-Ttype Nanowire Heterostructure Field Effect Transistors

“…Under proper growth conditions, this metal catalyst particle captures reactants and enhances the growth rate perpendicular to the substrate, thus creating a pseudo-one-dimensional semiconductor wire. [9] The inner core (70-nm diameter) was deposited at conditions that encourage this VLS growth mechanism while the outer AlGaN shell was deposited at conditions similar that used for a thin film growth with a high planar growth rate. The thickness of the shell was directly proportional to growth time indicating controlled epitaxial growth.…”

Characterization of erbium chloride seeded gallium nitride nanocrystals

“…In contrast to traditional metal (Ni, Au, Fe) seeded growth [20,23,24], here it was intended to dissolve this rare earth seed into the semiconductor matrix. The presence of Er 3+ luminescent transitions in Fig.…”

“…Additionally, this technique allows the selective deposition of nano-and microemitters with a placement based on the location of the ErCl 3 seed. This seeded growth technique is interesting for single-step deposition of a multi-color emitter as well as the direct integration of GaN optoelectronics with Si microelectronics [18][19][20].…”

Nature of luminescence and strain in gallium nitride nanowires

“…Trimethylgallium was flowed for 2 s prior to the onset of NH 3 flow to prevent nitridation of the nickel seeds. Detailed elsewhere is a standard procedure to produce nanowires with a 70-nm diameter in a H 2 ambient at a temperature of 750 1C, a pressure of 50 Torr and a V/III ratio of 50 [9]. As motivated above, larger diameter nanowires were produced by increasing the growth temperature to 825 1C and increasing the V/III ratio of 150.…”

“…The result is a population of mobile charge confined only to a narrow conducting core. Similarly, thick nanowires are needed to confine the electromagnetic mode in nanooptoelectronic devices [9]. Thus, it is of interest to study the growth and luminescence properties of large-diameter nanowires.…”