Plasmonic Switching in Au-Functionalized GaN Nanowires in the Realm of Surface Plasmon Polariton Propagation: a Single Nanowire Switching Device

Dhara, Sandip; Lu, Chien-Yao; Chen, Kuei‐Hsien

doi:10.1007/s11468-014-9815-z

Cited by 9 publications

(11 citation statements)

References 23 publications

(23 reference statements)

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“…In a microreactor approach [33], Au NPs embedded in silica matrix showed optical switching with the exposure of 532 nm, which was close to the SPR absorption peak for Au NPs. In the similar approach, an optical switching was also reported for Au functionalized GaN (Au-GaN) nanowires with an excitation of 532 nm [34]. Role of band conduction in GaN is ruled out in the absence of optical switching using 325 nm (~3.8 eV) excitation (energy being higher than the band gap of GaN ~ 3.4 eV).…”

Section: Introductionmentioning

confidence: 77%

“…11) [56]. Resistivity measurements in the single nanowire showed lowering of resistivity from the bulk value of 0.3 -cm (measured at dark) to 0.05 -cm for the process [34].…”

Section: A Propagative Surface Plasmon For Electrical Transportmentioning

confidence: 94%

“…The role of sub-band gap states, however was clearly understood for both percolative model considering 'site energy' correlated to Coulomb gap in the granular system [48,50] In a recent study, optical switching for 1D Au-GaN nanowires and in a single nanowire (Fig. 9) was demonstrated [34] for sub-band gap (532 nm; GaN band gap at 365 nm) excitation with surface plasmon resonance peak of Au around 550 nm. Conduction process, responsible for the observed photoresponse (Fig.…”

Section: A Propagative Surface Plasmon For Electrical Transportmentioning

confidence: 99%

“…The SPP in the form of drifting hot electrons across the oxide barrier and tunnelling to the counter electrode in the evanescent field of SPR was made responsible for electrical transport mechanism. In the specially designed experiment [34], optical switching in Au-GaN nanowires with a sub-band gap excitation of 532 nm suggested possible role SPP assisted transport of electron in the system. The same mechanism was proposed for the propagation of electronic carrier belonging to the conduction electron of noble bimetals in the Au-Ag@SG system in understanding the observed photoresponse [40].…”

Section: Introductionmentioning

confidence: 99%

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Surface plasmon polariton assisted optical switching in noble bimetallic nanoparticle system

Dhara

Magudapathy

et al. 2015

Applied Physics Letters

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Photoresponse of bimetallic Au-Ag nanoparticle embedded soda glass (Au-Ag@SG) substrate is reported for surface plasmon assisted optical switching using 808 nm excitation.Au-Ag@SG system is made by an ion beam technique where Ag + is introduced first in the soda glass matrix by ion exchange technique. Subsequently 400 keV Au + is implanted in the sample for different fluences which is followed by an ion beam annealing process using 1MeV Si + at a fixed fluence of 2E16 ions.cm -2 . Characteristic surface plasmon resonance (SPR) peaks around 400 and 550 nm provided evidence for the presence of Au and Ag nanoparticles. An optical switching in the Au-Ag@SG system with 808 nm, which is away from the characteristic SPR peaks of Ag and Au nanoparticles, suggests the possible role of TPA owing to the presence of interacting electric dipole in these systems. The role of surface plasmon polariton is emphasized for the propagation of electronic carrier belonging to the conduction electron of Au-Ag system in understanding the observed photoresponse. Unique excitation dependent photoresponse measurements confirm the possible role of TPA process.A competitive interband and intraband transitions in the bimetallic system of Au and Ag with 2 may be primarily responsible for the observation, which are validated qualitatively using finite difference time domain calculations where inter-particle separation of Au and Ag play an important role. Thus, a smart way of optical switching can be envisaged in noble bimetallic nanocluster system where long wavelength with higher skin depth can be used for communication purpose.

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Section: Introductionmentioning

confidence: 77%

“…11) [56]. Resistivity measurements in the single nanowire showed lowering of resistivity from the bulk value of 0.3 -cm (measured at dark) to 0.05 -cm for the process [34].…”

Section: A Propagative Surface Plasmon For Electrical Transportmentioning

confidence: 94%

Section: A Propagative Surface Plasmon For Electrical Transportmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Surface plasmon polariton assisted optical switching in noble bimetallic nanoparticle system

Dhara

Magudapathy

et al. 2015

Applied Physics Letters

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“…What is worth mentioning, in this paper, is that we propose a rather simple structure based on graphene nanoribbon (GNR) supporting plasmon switching effects in a nanoscale domain. Plasmon switching effects are also studied in many structures [27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Plasmon switching effect based on graphene nanoribbon pair arrays

Liú

Liu

et al. 2016

Optics Communications

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Far field photoluminescence imaging of single AlGaN nanowire in the sub‐wavelength scale using confinement of polarized light

2016

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Till now the nanoscale focusing and imaging in the subdiffraction limit is achieved mainly with the help of plasmonic field enhancement by confining the light assisted with noble metal nanostructures. Using far field imaging technique, we have recorded polarized spectroscopic photoluminescence (PL) imaging of a single AlGaN nanowire (NW) of diameter ß100 nm using confinement of polarized light. It is found that the PL from a single NW is influenced by the proximity to other NWs. The PL intensity is proportional to 1/(l×d), where l and d are the average NW length and separation between the NWs, respectively. We suggest that the proximity induced PL intensity enhancement can be understood by assuming the existence of reasonably long lived photons in the intervening space between the NWs. A nonzero non-equilibrium population of such photons may cause stimulated emission leading to the enhancement of PL emission with the intensity proportional to 1/(l×d). The enhancement of PL emission facilitates far field spectroscopic imaging of a single semiconductor AlGaN NW of subwavelength dimension. * Corresponding Authors

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Plasmonic Switching in Au-Functionalized GaN Nanowires in the Realm of Surface Plasmon Polariton Propagation: a Single Nanowire Switching Device

Abstract: Photoresponse of Au nanoparticle functionalized semiconducting GaN (Au-GaN) nanowires is reported for an optical switching using 532 excitation. Wide band gap GaN nanowires are grown by catalyst assisted chemical

Cited by 9 publications

References 23 publications

Surface plasmon polariton assisted optical switching in noble bimetallic nanoparticle system

Surface plasmon polariton assisted optical switching in noble bimetallic nanoparticle system

Plasmon switching effect based on graphene nanoribbon pair arrays

Far field photoluminescence imaging of single AlGaN nanowire in the sub‐wavelength scale using confinement of polarized light

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