Plasmonic Physics of 2D Crystalline Materials

Torbatian, Zahra; Asgari, Reza

doi:10.3390/app8020238

Cited by 38 publications

(32 citation statements)

References 95 publications

(117 reference statements)

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“…The presence of the second branch of intersubband plasmon have not been mentioned any of previous works of SWNTs. However in recent years, several ab initio studies show the similar second branch for bilayer graphene, nanoribbons, and other 2D materials [55][56][57][58]. The intraband nature of the second branch plasmon in graphene nanoribbons was supposed by Gomez et al [56], which is consistent with our results.…”

Section: Parallel Polarizationsupporting

confidence: 92%

Intersubband plasmon excitations in doped carbon nanotubes

et al. 2019

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We theoretically investigate intersubband plasmon excitations in doped single wall carbon nanotubes (SWNTs) by examining the dependence of plasmon frequency on the nanotube diameter, chirality, and Fermi energy. The intersubband plasmons can be excited by light with polarization perpendicular to the nanotube axis and thus the plasmon excitations corresponds to optical transitions between the two different subbands, which are sensitive to the Fermi energy. In every SWNT, this mechanism leads to the emergence of the optical absorption peak at the plasmon frequency for a given Fermi energy, EF . The plasmon frequencies calculated for many SWNTs with diameter dt < 2 nm exhibit a dependence on (1/dt) 0.7 and the frequencies are further affected by Fermi energy as E 0.25 F . With this knowledge, it is possible to develop a map of intersubband plasmon excitations in doped SWNTs that could be useful to quickly estimate the doping level and also be an alternative way to characterize nanotube chirality.

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Section: Parallel Polarizationsupporting

confidence: 92%

Intersubband plasmon excitations in doped carbon nanotubes

et al. 2019

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“…Sparsely-layered MoS 2 displays light absorbing and luminescence capabilities, enabling photodetector operation [1,3]. Several efforts have been made to further develop 2D TMDC photodetectors with ultrafast response and high responsivity [4], owing to the longer lifetime of their photo-generated carriers and higher photosensitivity than traditional semiconductors [5][6][7]. However, 2D TMDC photodetectors fabricated with transferred van der Waals heterostructures or chemical vapor deposition-grown hybrids are typically characterized with low responsivity.…”

Section: Introductionmentioning

confidence: 99%

Large-Area Ultraviolet Photodetectors Based on p-Type Multilayer MoS2 Enabled by Plasma Doping

Zhang

Tseng

2019

Applied Sciences

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Two-dimensional (2D) MoS2 has recently become of interest for applications in broad range photodetection due to their tunable bandgap. In order to develop 2D MoS2 photodetectors with ultrafast response and high responsivity, up-scalable techniques for realizing controlled p-type doping in MoS2 is necessary. In this paper, we demonstrate a p-type multilayer MoS2 photodetector with selective-area doping using CHF3 plasma treatment. Microscopic and spectroscopic characterization techniques, including atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), are used to investigate the morphological and electrical modification of the p-type doped MoS2 surface after CHF3 plasma treatment. Back-gated p-type MoS2 field-effect transistors (FETs) are fabricated with an on/off current ratio in the order of 103 and a field-effect mobility of 65.2 cm2V−1s−1. They exhibit gate-modulated ultraviolet photodetection with a rapid response time of 37 ms. This study provides a promising approach for the development of mild plasma-doped MoS2 as a 2D material in post-silicon electronic and optoelectronic device applications.

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“…In order to predict their dielectric properties, much work has been dedicated to rigorous and accurate calculations using time-dependent density-functional theory (TDDFT) and many-body perturbation theory (see Refs. [35][36][37] for a recent review). These calculations require a large computational effort for each of the many possible heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Dielectric properties of graphene/ MoS2 heterostructures from ab initio calculations and electron energy-loss experiments

et al. 2018

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High-energy electronic excitations of graphene and MoS 2 heterostructures are investigated by momentumresolved electron energy-loss spectroscopy in the range of 1 to 35 eV. The interplay of excitations on different sheets is understood in terms of long-range Coulomb interactions and is simulated using a combination of ab initio and dielectric model calculations. In particular, the layered electron-gas model is extended to thick layers by including the spatial dependence of the dielectric response in the direction perpendicular to the sheets. We apply this model to the case of graphene/MoS 2 /graphene heterostructures and discuss the possibility of extracting the dielectric properties of an encapsulated monolayer from measurements of the entire stack.

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Plasmonic Physics of 2D Crystalline Materials

Cited by 38 publications

References 95 publications

Intersubband plasmon excitations in doped carbon nanotubes

Intersubband plasmon excitations in doped carbon nanotubes

Large-Area Ultraviolet Photodetectors Based on p-Type Multilayer MoS2 Enabled by Plasma Doping

Dielectric properties of graphene/ MoS2 heterostructures from ab initio calculations and electron energy-loss experiments

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